ONSEMI NDD01N60T4G

NDD01N60, NDT01N60
N-Channel Power MOSFET
600 V, 8.5 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
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Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
NDD
VDSS
NDT
600
ID
1.5
0.4
A
Continuous Drain Current RqJC
Steady State, TC = 100°C (Note 1)
ID
1.0
0.25
A
Pulsed Drain Current, tp = 10 ms
IDM
6.0
1.5
A
Power Dissipation – RqJC
Steady State, TC = 25°C
PD
46
2.5
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Drain−to−Source
Avalanche Energy (IPK = 1.0 A)
EAS
13
mJ
Peak Diode Recovery (Note 2)
dv/dt
4.5
IS
Lead Temperature for Soldering
Leads
TL
260
°C
Operating Junction and Storage
Temperature
TJ, TSTG
−55 to +150
°C
0.4
THERMAL RESISTANCE
Junction−to−Ambient
D (2)
G (1)
S (3)
MARKING
DIAGRAMS
4
Drain
4
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
Symbol
Value
Unit
NDD01N60
RqJC
2.7
°C/W
(Note 4) NDD01N60
(Note 3) NDD01N60−1
(Note 4) NDT01N60
(Note 5) NDT01N60
RqJA
38
96
58
141
°C/W
Junction−to−Case (Drain)
N−Channel MOSFET
V/ns
Source Current (Body Diode)
Parameter
8.5 W @ 10 V
V
Continuous Drain Current RqJC
Steady State, TC = 25°C (Note 1)
1.5
600 V
Unit
1 2
3
2
1 Drain 3
Gate Source
4
IPAK
CASE 369D
STYLE 2
1
2
12
4
Drain
3
Y
WW
G
= Year
= Work Week
= Pb−Free Package
4
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
DPAK
CASE 369C
STYLE 2
YWW
01
N60G
Symbol
RDS(ON) MAX
YWW
01
N60G
Parameter
V(BR)DSS
3
SOT−223
CASE 318E
STYLE 3
1 2 3
Gate Drain Source
Drain
4
AYW
01N60G
G
1
2
3
Gate Drain Source
A
= Assembly Location
Y
= Year
W
= Work Week
01N60 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 2
1
Publication Order Number:
NDD01N60/D
NDD01N60, NDT01N60
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
600
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 1 mA
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
V
660
mV/°C
TJ = 25°C
1
TJ = 125°C
50
IGSS
VGS = ±20 V
VGS(TH)
VDS = VGS, ID = 50 mA
±100
mA
nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
2.2
3.3
3.7
VGS(TH)/TJ
Static Drain-to-Source On Resistance
RDS(on)
VGS = 10 V, ID = 0.2 A
8.0
gFS
VDS = 15 V, ID = 0.2 A
0.9
S
160
pF
Forward Transconductance
7.0
V
Negative Threshold Temperature Coefficient
mV/°C
8.5
W
CHARGES, CAPACITANCES & GATE RESISTANCES
Input Capacitance (Note 7)
Ciss
Output Capacitance (Note 7)
Coss
Reverse Transfer Capacitance (Note 7)
Crss
4.0
Total Gate Charge (Note 7)
Qg
7.2
Gate-to-Source Charge (Note 7)
Qgs
1.2
Gate-to-Drain Charge (Note 7)
Qgd
Plateau Voltage
VGP
4.5
V
Gate Resistance
Rg
6.7
W
td(on)
8.0
ns
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 300 V, ID = 0.4 A, VGS = 10 V
22
nC
3.1
SWITCHING CHARACTERISTICS (Note 8)
Turn-on Delay Time
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
VDD = 300 V, ID = 0.4 A,
VGS = 10 V, RG = 0 W
tf
5.1
16.5
21.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
Qrr
IS = 0.4 A, VGS = 0 V
TJ = 25°C
0.78
TJ = 125°C
0.63
1.6
179
VGS = 0 V, VDD = 30 V
IS = 1.0 A, di/dt = 100 A/ms
V
ns
37
141
288
nC
6. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NDD01N60−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDD01N60T4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
NDT01N60T1G
SOT−223
(Pb-Free, Halogen-Free)
1000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
2.0
5.5 V
VGS = 10 V
VDS ≥ 25 V
4.8 V
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.0
TJ = 25°C
4.6 V
0.6
0.4
4.4 V
0.2
4.2 V
1.6
1.2
TJ = 25°C
0.8
TJ = −55°C
TJ = 125°C
0.4
4.0 V
0
5
10
15
20
0
25
9.0
8.5
8.0
7.5
7.0
6
7
8
9
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
16
VGS = 10 V
TJ = 25°C
14
12
10
8
6
0
0.5
1.0
1.5
2.0
2.5
3.0
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.4
ID = 200 mA
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
5
Figure 2. Transfer Characteristics
ID = 200 mA
TJ = 25°C
2.0
4
Figure 1. On−Region Characteristics
9.5
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
6.5
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.6
1.2
VGS = 0 V
1000
TJ = 150°C
TJ = 125°C
100
0.8
0.4
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
600
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Ciss
10
Coss
Crss
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
1
10
VDS
6
Qgs
150
0
0
1
2
3
4
5
6
7
50
8
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
3.5
tf
td(off)
td(on)
0.1
1
10
VGS = 0 V
TJ = 25°C
3.0
IS, SOURCE CURRENT (A)
2.5
2.0
1.5
1.0
0.5
0
100
0
0.2
0.4
0.6
0.8
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
10
VGS = 10 V
Single Pulse
TC = 25°C
TJ = 150°C
1
10 ms
100 ms
1 ms
10 ms
0.1
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
100
VDS = 300 V
TJ = 25°C
ID = 400 mA
2
QG, TOTAL GATE CHARGE (nC)
tr
ID, DRAIN CURRENT (A)
200
Qgd
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
0.01
250
4
100
VDS = 300 V
ID = 400 mA
VGS = 10 V
1
300
8
1000
10
350
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
RDS(on) Limit
Thermal Limit
Package Limit
1 ms
100 ms
1
10 ms
0.1
0.01
VGS = 10 V
Single Pulse
TC = 25°C
TJ = 150°C
0.1
1
10
dc
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD01N60
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDT01N60
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4
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
50% Duty Cycle
1 20%
0.1
10%
5%
2%
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
100
1000
PULSE TIME (sec)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD01N60
100
R(t) (°C/W)
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDT01N60
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5
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
q
C
q
A
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
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6
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
mm Ǔ
ǒinches
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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7
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NDD01N60/D