IPA075N15N3 G
Ie\Q
"%&$!"#TM3 Power-Transistor
Product Summary
Features
EMOWMSQ
BM^WUZS
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#) ' ' !
Package
E=%ID**(%+
Marking
(/-C)-C
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9
6954
Parameter
Symbol Conditions
? >D
9>E? EC 4B
19> 3 EBB5>D
I9
Value
T 8 T
,+
T 8 T
+)
Unit
6
) E<C54 4B19> 3 EBB5>D*#
I 9$\aX_Q
T 8 T
)/*
F1<1>3 85 5>5B7I C9
>7<5 @E<C5
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I 9 R =H "
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V =H
q*(
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P `[`
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K
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T V T _`S
T
T 8 T
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93 3 1D57? BI #' # )#
$ , - 1>4 $ , *#
+ 5F
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IPA075N15N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
+&0
)-(
%
%
Thermal characteristics
-85B=1<B5C9
CD1>3 5 :E>3 D9
? > 3 1C5
R `T@8
A'K
Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954
Static characteristics
B19>C? EB35 2 B51;4? G> F? <D175
V "7G#9HH V =H . I 9 =
!1D5 D8B5C8? <4 F? <D175
V =H"`T#
V 9H4V =H I 9 V *
+
,
05B? 71D5 F? <D175 4B19> 3 EBB5>D
I 9HH
V 9H . V =H . T V T
%
(&)
)
V 9H . V =H . T V T
%
)(
)((
J
r6
!1D5C? EB35 <51;175 3 EBB5>D
I =HH
V =H . V 9H .
%
)
)((
Z6
B19>C? EB35 ? >CD1D5 B5C9CD1>3 5
R 9H"[Z#
V =H . I 9 %
-&1
/&-
Y"
V =H . I 9 %
.&*
/&1
%
*&+
%
"
,-
01
%
H
!1D5 B5C9CD
1>3 5
R=
I^MZ_O[ZPaO`MZOQ
g R_
+ 5F
gV 9Hg5*gI 9gR 9H"[Z#YMd
I 9 @175 CB%(C%CD
IPA075N15N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
-,/(
/*0(
%
.+0
0,1
Dynamic characteristics
#>@ED3 1@13 9D1>3 5
C U__
V =H . V 9H . f & " J
( ED@ED3 1@13 9
D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
C ^__
%
)(
%
-EB>? > 45<1I D9=5
t P"[Z#
%
**
%
+ 9C5 D9
=5
t^
%
*-
%
-EB>? 6645<1I D9=5
t P"[RR#
%
-(
%
tR
%
)-
%
!1D5 D? C? EB35 3 81B75
Q S_
%
*/
%
!1D5 D? 4B19> 3 81B75
Q SP
%
))
%
%
**
%
1<<D9
=5
V 99 . V =H . I 9 R = "
\<
Z_
!1D5 81BS5 81B13 D5B9
CD
93C,#
V 99 . I 9 V =H D? .
Z8
, G9D389
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Q _c
!1D5 3 81B75 D? D
1<
QS
%
/(
1+
!1D5 @<1D51E F? <D
175
V \XM`QMa
%
-
%
J
( ED@ED3 81B75
Q [__
%
)/1
*+1
Z8
%
%
,+
6
%
%
)/*
%
(&1
)&*
J
%
),,
%
Z_
%
,1.
%
Z8
V 99 . V =H .
Reverse Diode
9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB
5>D
IH
9? 45 @E<C5 3 EBB
5>D
I H$\aX_Q
9? 45 6? BG1B4 F? <D175
V H9
+ 5F5BC5 B53 ? F5BI D9
=5
t ^^
+ 5F5BC5 B53 ? F5BI 3 81B75
Q ^^
,#
+ 5F
T 8 T
V =H . I < T V T
V G . I <4I H
Pi <'Pt V C
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@175 CB%(C%CD
IPA075N15N3 G
1 Power dissipation
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H" .
40
50
40
30
I D [A]
P tot [W]
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `T@84R"t \#
@1B
1=5D5B t \
@1B1=5D5B
D 4t \'T
103
VC
(&-
VC
102
=C
VC
(&*
100
Z thJC [K/W]
I D [A]
(&)
=C
10
1
(&((&(*
(&()
C9>7<5 @E<C5
10
98
-1
100
10-2
10-1
10
-1
10
0
10
1
10
2
10
3
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
+ 5F
10-5
@175 CB%(C%CD
IPA075N15N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
120
12
.
.
.
100
10
.
80
8
R DS(on) [m ]
I D [A]
.
60
40
.
6
.
4
.
20
2
.
0
0
0
1
2
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
100
160
140
80
120
100
I D [A]
g fs [S]
60
80
40
60
40
20
20
T
T
0
0
0
2
4
6
8
+ 5F
0
20
40
60
I D [A]
V GS [V]
@175 CB%(C%CD
IPA075N15N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
I9
24
4
3.5
20
V 3
V 2.5
V GS(th) [V]
R DS(on) [m ]
16
12
10!
2
1.5
8
`e\
1
4
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " J
I <4R"V H9#
@1B1=5D5B
TV
105
103
104
8U__
8[__
I F [A]
C [pF]
10
102
3
T
T
T 102
101
8^__
T 101
100
0
20
40
60
80
100
120
V DS [V]
+ 5F
0
0.5
1
1.5
2
V SD [V]
@175 CB%(C%CD
IPA075N15N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
100
10
T
.
8
.
T
T
10
.
V GS [V]
I AS [A]
6
4
2
1
0
1
10
100
1000
0
20
40
60
80
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
170
V =H
Qg
165
V BR(DSS) [V]
160
155
150
V S _"`T#
145
Q S "`T#
140
Q _c
Q S_
135
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5F
@175 CB%(C%CD
IPA075N15N3 G
PG-TO220-FP: Outline
+ 5F
@175 CB%(C%CD
IPA075N15N3 G
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