MMSTA56 TRANSISTOR(PNP) SOT–323 FEATURES Small Surface Mount Package General Poupose for Amplification MARKING:K2G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V Collector cut-off current ICBO VCB=-80V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 nA DC current gain hFE IC=-100mA, IB=-10mA -0.25 V VCE=-1V, IC=-100mA -1.2 V Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT VCE=-1V, IC=-10mA 50 VCE=-1V, IC=-100mA 50 VCE=-1V,IE=-100mA , f=100MHz 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５