MMSTA92 TRANSISTOR(PNP) SOT–323 FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching MARKING:K3R 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -300 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -305 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -250 nA Collector cut-off current ICEO VCE=-200V, IB=0 -250 nA VCE=-300V, IB=0 -5 µA Emitter cut-off current IEBO -100 nA DC current gain hFE VEB=-5V, IC=0 VCE=-10V, IC=-1mA 60 VCE=-10V, IC=-10mA 100 VCE=-10V, IC=-30mA 60 200 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB=-2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC=-20mA, IB=-2mA -0.9 V Transition frequency Collector output capacitance fT Cob VCE=-20V,IE=-10mA , f=30MHz VCB=-20V, IE=0, f=1MHz 50 MHz 6 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF