S901 4W TRANSISTOR(NPN) SOT–323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V 1. BASE 2. EMITTER 3. COLLECTOR IC Collector Current 100 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=100µA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 100 nA Collector cut-off current ICEO VCE=35V, IB=0 100 nA Emitter cut-off current IEBO VEB=4V, IC=0 100 nA DC current gain hFE VCE=5V, IC=1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=5V, IC=2mA 0.58 VCE=5V,IC=10mA , f=30MHz 150 VCB=10V, IE=0, f=1MHz MHz 3.5 CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING J6 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF