HTSEMI MMST5401

MMST5401
TRANSISTOR(PNP)
SOT–323
FEATURES
 Complementary to MMST5551
 Small Surface Mount Package
 Ideal for Medium Power Amplificationand Switching
MARKING:K4M
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-600
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-120V, IE=0
-50
nA
Emitter cut-off current
IEBO
VEB=-3V, IC=0
-50
nA
DC current gain
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
Collector output capacitance
fT
Cob
VCE=-5V, IC=-1mA
50
VCE=-5V, IC=-10mA
60
VCE=-5V, IC=-50mA
50
300
IC=-50mA, IB=-5mA
-0.5
V
IC=-10mA, IB=-1mA
-0.2
V
IC=-50mA, IB=-5mA
-1
V
IC=-10mA, IB=-1mA
-1
V
VCE=-10V,IC=-10mA , f=100MHz
VCB=-10V, IE=0, f=1MHz
100
MHz
6
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
pF