LUGUANG 1N5712

1N5712
Small Signal Schottky Diodes
VOLTAGE RANGE: 20 V
POWER DISSIPATION: 430 mW
Features
DO - 35(GLASS)
Metal-to-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
Prmarly intended for high level UHF/VHF detection
and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case
Dimensions in millimeters
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Value
UNITS
VRRM
20.0
V
Pow er dissipation (Infinite Heat Sink)
Ptot
430.0
mW
Forw ard continuous current
IFSM
35.0
mA
TJ/TSTG
c-55 ---+ 150
TL
230
Peak reverse voltage
Junction and storage temperature range
Maximum lead temperature for soldering during 10S at 4mm from case
ELECTRICAL CHARACTERISTICS
Reverse breakdow n voltage
@ IR=10 A
Leakage current
@ VR=16V
Forw ard voltage drop
@
Test pulse: tp 300 s
Junction capacitance
<2%
IF=1mA
Symbols
Min.
VR
20.0
Typ.
Thermal resistance
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UNITS
V
150
IR
nA
0.41
VF
1.0
IF=35mA
@ VR=0V,f=1MHz
Max.
V
CJ
2
pF
RθJA
400
K/W
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1N5712
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL CURRENT VERSUS FORWARD VOLTAGE AT DIFFERENT TEMPERATURES (TYPICAL VALUES)
mA
10
2
10
IF
1
Tamb=150
Tamb=20
Tamb=55
10
-1
10
-2
0
0.2
0.4 0.6
1
0.8
1.2
V
VF
FIG.2 --FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES)
mA
30
Tamb=25
25
IF
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1 V
VF
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1N5712
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
--------
FIG.3 --REVERSE CURRENT VERSUS AMBIENT
TEMPERATURE
BB
X
FIG.4 -- REVERSE CURRENT VERSUS CONTINUOUS ZZ ZZ
REVERSE VOLTAGE (TYPICAL VALUES)
B
A
A
2
10
10
90%confidence
V R =16V
10
IR
2
150
10
max
typ
125℃
IF
1
100℃
1
75℃
-1
-1
10
10
50
-2
-2
10
10
-3
10 0
25℃
-3
25
50
75
10 0
100 125 150
25
50
75
100 125 150 V
VR
Tamb
FIG.5 -- CAPACITANCE CVERSUS REVERS APPLIED VOLTAGE VR (TYPICAL VALUES)
pF
3.0
Tamb=25
2.5
C J 2.0
1.5
1.0
0.5
0
0
5
10
15
20 V
VR
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