LUGUANG BAT45

BAT45
Small Signal Schottky Diodes
VOLTAGE RANGE: 15 V
CURRENT: 30 mA
Features
DO - 35(GLASS)
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Dimensions in millimeters
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Symbols
Value
UNITS
VRRM
15
V
301)
mA
IFSM
60
mA
TJ
-65 ---+ 150
TSTG
c-65 ---+ 150
IF
Forward continuous current
Surge non repetitive forward current tp≤1s
Junction tenperature
Storage temperature range
1)Valid provided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Reverse breakdown voltage
Leakage current
@ IR=10 A
Min.
VR
15
Typ.
IR
@ VR=6V
Forw ard voltage drop
Symbols
@ VR=1.0V,f=1MHz
Termal resistance junction to ambient air
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nA
0.38
VF
0.5
V
1.0
IF=30mA
Junction capacitance
UNITS
V
100
@ I F=1.0mA
Test pulse:tp≤300µ s,δ<2% I F=10mA
Max.
CJ
1.1
pF
RθJA
400
K/W
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BAT45
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE
AT DIFFERENT TEMPERATURES (TYPICAL VALUES)
mA
100
IF
10
TJ=25
1
TJ=60
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
VF
FIG.2 -- REVERSE CURRENT VERSUS JUNCTION TEMPERATURE
µA
10
90%confidence
V R =8V
IR
1.0
max.
typ.
0.1
0.01
0.001
0
25
50
75
100
125
TJ
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BAT45
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.3 -- REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE
µA
10
12 5
10 0
IR
1.0
75
60
0.1
50
0.01
0.001
25
0
5
10
15
20
25
V
VR
FIG.4 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES)
pF
2.5
CJ
Tamb=25℃
2.0
1.5
1.0
0.5
0
2
4
6
8
10
V
VR
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mail:[email protected]