ONSEMI SMMSD103T1G

MMSD103T1G,
SMMSD103T1G
High Voltage Switching
Diode
Features
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 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOD−123
CASE 425
STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Continuous Reverse Voltage
Rating
VR
250
V
Peak Forward Current
IF
200
mA
IFM(surge)
625
mA
Characteristic
Symbol
Value
Unit
Forward Power Dissipation, FR−5 Board
(Note 1) @ TA = 25C
Derate above 25C
PF
400
3.2
mW
mW/C
Peak Forward Surge Current
1
Cathode
2
Anode
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Case
RJL
Thermal Resistance,
Junction−to−Ambient
RJA
Junction and Storage
Temperature Range
TJ, Tstg
174
492
−55 to +150
1
JS M G
G
C/W
JS = Device Code
M = Date Code
G
= Pb−Free Package
C/W
(Note: Microdot may be in either location)
C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
Device
Package
Shipping†
MMSD103T1G
SOD−123 3,000 / Tape & Reel
(Pb−Free)
SMMSD103T1G
SOD−123 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMSD103T1/D
MMSD103T1G, SMMSD103T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
1.0
100
250
−
−
−
1000
1250
−
5.0
−
50
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 V)
(VR = 200 V, TJ = 150C)
IR
Reverse Breakdown Voltage
(IBR = 100 A)
V(BR)
Forward Voltage
(IF = 100 mA)
(IF = 200 mA)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Reverse Recovery Time
(IF = IR = 30 mA, RL = 100 )
trr
A
V
mV
pF
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMSD103T1G, SMMSD103T1G
TA = −55C
1000
800
REVERSE CURRENT (nA)
25C
150C
600
400
200
1
1
10
100
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1000
TA = 150C
TA = 25C
TA = −55C
1
2
5
10
20
50
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
0.75
Cd, DIODE CAPACITANCE (pF)
FORWARD VOLTAGE (mV)
1200
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0
1
2
3
4
5
6
7
8
VR, REVERSE VOLTAGE (V)
Figure 4. Diode Capacitance
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3
9
10
100 200 300
MMSD103T1G, SMMSD103T1G
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
q
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 
STYLE 1:
PIN 1. CATHODE
2. ANODE
L
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 
0
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
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MMSD103T1/D