MMSD4148T1 Switching Diode Features •SOD-123 Surface Mount Package •High Breakdown Voltage •Fast Speed Switching Time •Pb-Free Packages are Available http://onsemi.com 1 CATHODE MAXIMUM RATINGS Rating Symbol Value Continuous Reverse Voltage VR 100 V Peak Forward Current IF 200 mA IFSM 1.0 2.0 A TJ, Tstg -55 to +150 °C Peak Forward Surge Current (Note 1) t < 1 sec t = 1 msec Operating and Storage Junction Temperature Range Unit 2 1 SOD-123 CASE 425 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 2) TA = 25°C Derate above 25°C PD 425 mW 3.4 mW/°C 290 °C/W Thermal Resistance Junction-to-Ambient RqJA 2 ANODE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Typical Values 2. FR-5 = 1.0 oz Cu, 1.0 inz pad MARKING DIAGRAM 1 5I MG G 5I = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMSD4148T1 SOD-123 3000 / Tape & Reel MMSD4148T1G SOD-123 (Pb-Free) 3000 / Tape & Reel MMSD4148T3 SOD-123 10,000 / Tape & Reel MMSD4148T3G SOD-123 10,000 / Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 September, 2007 - Rev. 9 1 Publication Order Number: MMSD4148T1/D MMSD4148T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 - V - 25 5.0 nA mA OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mA) Reverse Voltage Leakage Current (VR = 20 V) (VR = 75 V) IR Forward Voltage (IF = 10 mA) VF - 1000 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD - 4.0 pF Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) trr - 4.0 ns 820 W +10 V 2k 100 mH 0.1 mF tr IF 0.1 mF tp t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) MMSD4148T1 100 10 I R, REVERSE CURRENT (A) μ 10 TA = 85°C TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 40 50 MMSD4148T1 PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MILLIMETERS NOM MAX 1.17 1.35 0.05 0.10 0.61 0.71 --0.15 1.60 1.80 2.69 2.84 3.68 3.86 ----- MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 --- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MIN 0.94 0.00 0.51 --1.40 2.54 3.56 0.25 C b SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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