ONSEMI BAS16XV2T5

BAS16XV2T1,
BAS16XV2T5,
SBAS16XV2T1G
Switching Diode
Features
•
•
•
•
•
•
•
High−Speed Switching Applications
Lead Finish: 100% Matte Sn (Tin)
Qualified Reflow Temperature: 260°C
Extremely Small SOD−523 Package
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t=1s
IFSM
A
THERMAL CHARACTERISTICS
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
2
ANODE
MARKING
DIAGRAM
2
1
Symbol
Max
Unit
PD
200
mW
1.57
mW/°C
RθJA
635
°C/W
TJ, Tstg
−55 to 150
°C
1
A6 MG
G
2
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
4.0
1.0
0.5
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Characteristic
1
CATHODE
SOD−523
CASE 502
PLASTIC
MAXIMUM RATINGS
Rating
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Package
Shipping†
BAS16XV2T1
SOD−523
3000 / Tape & Reel
BAS16XV2T1G
SOD−523
(Pb−Free)
3000 / Tape & Reel
BAS16XV2T5G
SOD−523
(Pb−Free)
8000 / Tape & Reel
SBAS16XV2T1G
SOD−523
(Pb−Free)
3000 /T ape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR-5 Minimum Pad.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1
Publication Order Number:
BAS16XV2T1/D
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
75
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
Reverse Breakdown Voltage
(IBR = 100 mA)
V(BR)
mA
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
−
1.75
V
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω)
trr
−
6.0
ns
Stored Charge
(IF = 10mA to VR = 5.0V, RL = 500 Ω)
QS
−
45
pC
820 Ω
+10 V
2.0 k
100 μH
tr
0.1 μF
IF
tp
t
IF
trr
10%
t
0.1 μF
90%
D.U.T.
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
10
100
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
50
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
2X
b
0.08
1
M
2
X Y
DIM
A
b
c
D
E
HE
L
L2
TOP VIEW
A
c
HE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
2X
2X
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
2X
L
PACKAGE
OUTLINE
L2
BOTTOM VIEW
1.80
0.48
2X
0.40
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS16XV2T1/D