BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G Switching Diode Features • • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available Symbol Value Unit Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Repetitive Peak Forward Current IFRM 500 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM A THERMAL CHARACTERISTICS Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 ANODE MARKING DIAGRAM 2 1 Symbol Max Unit PD 200 mW 1.57 mW/°C RθJA 635 °C/W TJ, Tstg −55 to 150 °C 1 A6 MG G 2 A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 4.0 1.0 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic 1 CATHODE SOD−523 CASE 502 PLASTIC MAXIMUM RATINGS Rating http://onsemi.com Package Shipping† BAS16XV2T1 SOD−523 3000 / Tape & Reel BAS16XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel BAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel SBAS16XV2T1G SOD−523 (Pb−Free) 3000 /T ape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR-5 Minimum Pad. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 6 1 Publication Order Number: BAS16XV2T1/D BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 75 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mA) V(BR) mA V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR − 1.75 V Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10mA to VR = 5.0V, RL = 500 Ω) QS − 45 pC 820 Ω +10 V 2.0 k 100 μH tr 0.1 μF IF tp t IF trr 10% t 0.1 μF 90% D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 2X L PACKAGE OUTLINE L2 BOTTOM VIEW 1.80 0.48 2X 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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