VISHAY SQ2348ES

SQ2348ES
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
30
RDS(on) () at VGS = 10 V
0.024
RDS(on) () at VGS = 4.5 V
0.032
ID (A)
8
Configuration
Single
D
TO-236
(SOT-23)
G
1
S
2
TrenchFET® Power MOSFET
AEC-Q101 Qualifiedc
100 % Rg and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
3
D
G
Top View
SQ2348ES*
S
* Marking Code: 8Gxxx
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2348ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
IS
Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
ID
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
V
8
5.3
3.8
IDM
32
IAS
15.5
EAS
12
PD
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mountb
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S12-2036-Rev. A, 27-Aug-12
Document Number: 63706
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2348ES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 30 V, TJ = 125 °C
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
10
-
-
VGS = 10 V
ID = 12 A
-
0.020
0.024
VGS = 10 V
ID = 12 A, TJ = 125 °C
-
-
0.036
VGS = 10 V
ID = 12 A, TJ = 175 °C
-
-
0.042
VGS = 4.5 V
ID = 8 A
-
0.026
0.032
-
10
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 3 A
V
nA
μA
A

S
Dynamicb
-
430
540
-
100
125
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
40
50
Total Gate Chargec
Qg
-
7.95
14.5
-
1.6
-
-
1.3
-
f = 1 MHz
8.65
17.3
27
-
4.5
7
VDD = 15 V, RL = 3.4 
ID  4.4 A, VGEN = 10 V, Rg = 1 
-
8
12
-
21
32
-
6
9
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 15 V, f = 1 MHz
VDS = 15 V, ID = 5.5 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 3.5 A, VGS = 0 V
-
-
32
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2036-Rev. A, 27-Aug-12
Document Number: 63706
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2348ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
25
20
VGS = 10 V thru 4 V
ID - Drain Current (A)
ID - Drain Current (A)
20
15
10
15
10
TC = 25 °C
5
5
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
30
4
24
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
3
TC = 25 °C
2
1
TC = 125 °C
TC = 25 °C
18
TC = 125 °C
12
6
TC = - 55 °C
0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
1
5
6
Transconductance
0.10
700
0.08
560
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
2
3
4
ID - Drain Current (A)
0.06
0.04
VGS = 4.5 V
0.02
Ciss
420
280
Coss
140
VGS = 10 V
Crss
0
0
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-2036-Rev. A, 27-Aug-12
25
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
Document Number: 63706
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2348ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
ID = 5.5 A
VDS = 15 V
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
2
4
6
8
10
VGS = 10 V
1.1
VGS = 4.5 V
0.8
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
175
0.15
10
0.12
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1.4
0.5
- 50 - 25
0
0
ID = 5.5 A
1.7
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.09
0.06
TJ = 150 °C
0.03
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0.00
1.2
0
6
8
10
On-Resistance vs. Gate-to-Source Voltage
0.5
VDS - Drain-to-Source Voltage (V)
40
0.2
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
- 0.1
ID = 5 mA
- 0.4
ID = 250 μA
- 0.7
- 1.0
- 50 - 25
2
0
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
S12-2036-Rev. A, 27-Aug-12
125
150
175
38
ID = 1 mA
36
34
32
30
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 63706
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2348ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
Limited by RDS(on)*
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
100 ms
1 s, 10 s, DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2036-Rev. A, 27-Aug-12
Document Number: 63706
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2348ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63706.
S12-2036-Rev. A, 27-Aug-12
Document Number: 63706
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000