SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 60 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.017 ID (A) • 100 % Rg and UIS Tested 40 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD40N06-14L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 40 29 IS 40 IDM 160 IAS 32 EAS 51 PD UNIT 75 25 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 60 RthJC 2 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-1846-Rev. B, 30-Jul-12 Document Number: 67002 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 60 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 20 A - 0.011 0.014 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.024 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.029 VGS = 4.5 V ID = 20 A, TJ = 25 °C Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = 15 V, ID = 20 A - 0.014 0.017 - 52 - V nA μA A S Dynamicb - 1685 2105 - 305 385 Crss - 180 225 Qg - 34 51 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 40 A - 6 9 - 8.5 13 f = 1 MHz 1.20 2.46 3.70 - 8 12 VDD = 30 V, RL = 0.75 ID 40 A, VGEN = 10 V, Rg = 1 - 13 20 - 22 33 - 9 14 - - 160 A - 0.85 1.2 V td(on) tr td(off) pF tf nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 20 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1846-Rev. B, 30-Jul-12 Document Number: 67002 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 80 ID - Drain Current (A) ID - Drain Current (A) V GS = 4 V 60 40 60 40 T C = 25 °C 20 20 V GS = 3 V T C = 125 °C T C = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 0 15 1 Output Characteristics 3 4 5 Transfer Characteristics 80 0.05 T C = - 55 °C 64 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) T C = 25 °C 48 32 T C = 125 °C 16 0.04 0.03 0.02 V GS = 4.5 V 0.01 V GS = 10 V 0 0 0 8 16 24 ID - Drain Current (A) 32 40 0 12 24 36 48 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 2500 VGS - Gate-to-Source Voltage (V) ID = 40 A 2000 C - Capacitance (pF) Ciss 1500 1000 Coss 500 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance S12-1846-Rev. B, 30-Jul-12 60 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 30 35 Gate Charge Document Number: 67002 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 20 A 2.0 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.3 1.7 1.4 1.1 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 1.2 Source Drain Diode Forward Voltage 0.10 0.5 0.08 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.06 0.04 - 0.3 ID = 5 mA - 0.7 ID = 250 μA T J = 150 °C 0.02 - 1.1 T J = 25 °C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 - 1.5 - 50 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 75 VDS - Drain-to-Source Voltage (V) ID = 10 mA 72 69 66 63 60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S12-1846-Rev. B, 30-Jul-12 Document Number: 67002 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited I D - Drain Current (A) 100 µs Limited by RDS(on)* 10 ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1846-Rev. B, 30-Jul-12 Document Number: 67002 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N06-14L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67002. S12-1846-Rev. B, 30-Jul-12 Document Number: 67002 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000