SQJ403EEP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • - 30 RDS(on) () at VGS = - 10 V 0.0085 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) - 30a Configuration Single TrenchFET® Power MOSFET ESD Protection: 3000 V AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Single S m 5m 6.1 5.1 3m m D G 4 G S 5400 Ω 3 S 2 S P-Channel 1 D ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ403EEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID - 30 IS - 30 - 84 IAS - 50 EAS 125 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f V - 30 IDM PD UNIT 68 22 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 68 RthJC 2.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-0024-Rev. B, 14-Jan-13 Document Number: 67076 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403EEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 μA - 30 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 12 V - - ±2 μA VDS = 0 V, VGS = ± 20 V - - ±1 mA Gate-Source Leakage IGSS VGS = 0 V VDS = - 30 V - - -1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 30V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 30V, TJ = 175 °C - - - 250 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 10 A - 0.0070 0.0085 Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = - 10 V ID = - 10 A, TJ = 125 °C - - 0.0130 VGS = - 10 V ID = - 10 A, TJ = 175 °C - - 0.0150 VGS = - 4.5 V ID = - 7 A VDS = - 10 V, ID = - 10 A V μA A - 0.0120 0.0200 - 32 - S - 712 890 pF - 75 164 - 9.5 - - 19 - 2 4.3 7.5 - 38 57 Dynamicb Output Capacitance Coss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Rg VGS = 0 V VGS = - 10 V VDS = - 15 V, f = 1 MHz VDS = - 15 V, ID = - 10 A f = 1 MHz td(on) tr td(off) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 tf nC k - 82 123 - 134 201 - 178 214 - - - 84 A - - 0.75 - 1.2 V ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 3 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0024-Rev. B, 14-Jan-13 Document Number: 67076 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403EEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.005 10-2 10-3 0.004 Tj = 25 C IGSS - Gate Current (A) IGSS - Gate Current (A) 10-4 0.003 0.002 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.001 10-9 0.000 10-10 0 7 14 21 28 35 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 30 Gate Current vs. Gate-Source Voltage 80 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 30 TC = 25 °C 20 20 10 TC = 125 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 0.025 3000 0.020 2400 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0.015 0.010 VGS = 10 V 1800 1200 Coss 600 0.005 0 0 0 15 30 45 ID - Drain Current (A) On-Resistance vs. Drain Current S13-0024-Rev. B, 14-Jan-13 60 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance Document Number: 67076 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403EEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 VDS = 10 V 6 4 2 0 0 20 40 60 80 VGS = 4.5 V 1.1 0.8 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.10 RDS(on) - On-Resistance (Ω) 0.08 TJ = 150 °C IS - Source Current (A) 1.4 Qg - Total Gate Charge (nC) 10 1 TJ = 25 °C 0.1 0.01 0.06 0.04 TJ = 25 °C 0.02 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C 0.00 1.2 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 VDS - Drain-to-Source Voltage (V) ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 10 - 28 0.7 VGS(th) Variance (V) VGS = 10 V 0.5 - 50 - 25 100 100 0.001 0.0 ID = 10 A 1.7 0 25 50 75 100 125 150 175 ID = 1 mA - 30 - 32 - 34 - 36 - 38 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S13-0024-Rev. B, 14-Jan-13 Document Number: 67076 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403EEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs Limited by RDS(on)* 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0024-Rev. B, 14-Jan-13 Document Number: 67076 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ403EEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67076. S13-0024-Rev. B, 14-Jan-13 Document Number: 67076 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 25-Aug-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for Non-Al Parts Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: C15-1122-Rev. C, 07-Sep-15 DWG: 5976 Note • Millimeters will gover Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000