SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 60 RDS(on) (Ω) at VGS = 10 V 0.028 ID (A) per leg 8 Configuration Dual PowerPAK® SO-8L Dual D1 5 6.1 mm D2 5.1 3m m D 2 G1 D 1 G2 4 G2 S2 3 2 G1 1 S1 S1 Bottom View N-Channel MOSFET S2 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ964EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range 8 8 IDM 32 IAS 25 EAS 31 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f V 8 IS PD TC = 125 °C UNIT 35 11 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) SYMBOL LIMIT RthJA 85 RthJC 4.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2419-Rev. B, 19-Dec-11 1 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ964EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA 60 - - VGS(th) VDS = VGS, ID = - 250 μA 3.4 3.8 4.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 60 V - - 1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 9.6 A - 0.020 0.028 VGS = 10 V ID = 9.6 A, TJ = 125 °C - 0.033 0.046 VGS = 10 V ID = 9.6 A, TJ = 175 °C - 0.040 0.055 - 30 - - 2360 2900 - 155 190 - 73 90 Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 9.6 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VDS = 30 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 9.6 A f = 1 MHz Rg td(on) tr td(off) VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6.0 Ω tf - 38 57 - 12.5 - - 8 - 1 2 3 - 17 25 - 11 16 - 37 45 - 10 15 pF nC Ω ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 2.9 A, VGS = 0 - - 32 A - 0.8 1.1 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2419-Rev. B, 19-Dec-11 2 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ964EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 7 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 VGS = 6 V 16 8 24 TC = 25 °C 16 8 TC = - 55 °C TC = 125 °C VGS = 5 V 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 TC = 25 °C 48 0.04 RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 60 TC = - 55 °C 36 TC = 125 °C 24 0.03 0.02 VGS = 10 V 0.01 12 0 0 0 6 12 18 ID - Drain Current (A) 24 30 0 Transconductance 8 16 24 ID - Drain Current (A) 32 40 On-Resistance vs. Drain Current 3000 10 ID = 9.6 A VGS - Gate-to-Source Voltage (V) Ciss 2500 C - Capacitance (pF) 10 2000 1500 1000 Coss Crss 500 0 8 VDS = 30 V 6 4 2 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 0 Capacitance S11-2419-Rev. B, 19-Dec-11 5 10 15 20 25 30 Qg - Total Gate Charge (nC) 35 40 Gate Charge 3 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ964EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.0 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 9.7 A 1.7 1.4 VGS = 10 V 1.1 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.8 0.001 0.0 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 On-Resistance vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source Drain Diode Forward Voltage 75 0.10 VDS - Drain-to-Source Voltage (V) ID = 1 mA RDS(on) - On-Resistance (Ω) 0.08 0.06 TJ = 150 °C 0.04 TJ = 25 °C 0.02 2 4 6 8 VGS - Gate-to-Source Voltage (V) 69 66 63 60 - 50 0 0 72 10 On-Resistance vs. Gate-to-Source Voltage - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain-Source Breakdown vs. Junction Temperature 1.0 VGS(th) Variance (V) 0.5 0 ID = 5 mA - 0.5 ID = 250 μA - 1.0 - 1.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Threshold Voltage S11-2419-Rev. B, 19-Dec-11 4 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ964EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) ID - Drain Current (A) 100 IDM Limited 100 μs Limited by RDS(on)* 10 ID Limited 1 ms 1 10 ms 100 ms, 1 s, 10 s, DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 1. Duty Cycle, D = 0.02 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 10-4 10-3 10-2 4. Surface Mounted 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2419-Rev. B, 19-Dec-11 5 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ964EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65167. S11-2419-Rev. B, 19-Dec-11 6 Document Number: 65167 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline Revision: 27-Aug-12 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MILLIMETERS DIM. INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 (for Al product) 2.75 2.85 2.95 0.108 0.112 0.116 E2 (for other product) 3.18 3.28 3.38 0.125 0.129 0.133 0.006 F - - 0.15 - - L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0° - 0.020 0.117 10° 0° - 10° ECN: C12-0026-Rev. B, 27-Aug-12 DWG: 5976 Note • Millimeters will gover Revision: 27-Aug-12 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000