MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC JEITA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 5.3 V Emitter-base voltage VEBO 0.6 V Collector current IC 100 mA Base current IB 10 mA PC(Note1) 1.6 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 MT3S113P Microwave Characteristics (Ta = 25°C) Characteristics Symbol Max Unit 5.5 7.7 ⎯ GHz VCE=5V,IC=50mA,f=500MHz ⎯ 16 ⎯ dB 2 VCE=5V,IC=50mA,f=1GHz 8.5 10.5 ⎯ dB NF(1) VCE=5V,IC=50mA,f=500MHz ⎯ 0.95 ⎯ dB NF(2) VCE=5V,IC=50mA,f=1GHz ⎯ 1.15 1.45 dB 32.5 36.7 ⎯ dBmW Min Typ Max Unit ⎯ ⎯ 0.1 μA 200 ⎯ 400 ⎯ |S21e| (2) rd 3 order intermodulation distortion output intercept point Typ VCE=5V,IC=50mA fT |S21e| (1) Noise figure Min 2 Transition frequency Insertion gain Test Condition OIP3 VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=5V,IE=0 DC current gain hFE VCE=5V,IC=30mA Output capacitance Cob VCB=5V,IE=0, f=1MHz ⎯ 1.65 ⎯ pF Reverse transfer capacitance Cre VCB=5V,IE=0, f=1MHz (Note3) ⎯ 1.25 1.55 pF Note 3:Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2009-12-01 MT3S113P hFE-IC IC-VBE 100 1000 Collector-current IC(mA) DC current gain hFE VCE=5V VCE=3V 100 COMMON EMITTER Ta=25°C 10 1 10 COMMON EMITTER VCE=5V Ta=25°C 1 0.1 0.01 0.001 10 100 0 0.2 IC-VCE COMMON EMITTER Ta=25°C 10 440μA Collector-current IC(mA) Transition frequency fT(GHz) IB=520uA 360μA 80 280μA 70 60 200μA 50 40 120μA 30 20 40μA 10 0 1 2 3 4 5 6 8 6 4 2 1 10 100 Collector-current IC(mA) Cre,Cob-VCB |S21e|2-f 40 IE=0 f=1MHz Ta=25°C Cob Insertion gain |S21e|2(dB) Output capacitance Cob(pF) VCE=5V Ta=25°C Collector-emitter voltage VCE(V) 2.8 Reverse transfer capacitance Cre(pF) 1 0 0 2 1.6 0.8 fT-IC 90 2.4 0.6 Base-emitter voltage VBE(V) Collector-current IC(mA) 100 0.4 Cre 1.2 0.8 0.4 IC=50mA Ta=25°C 30 20 10 5V 3V 0 0.1 1 0 10 0.1 1 10 Frequency f (GHz) Collector-base voltage VCB(V) 3 2009-12-01 MT3S113P |S21e|2-IC NF-IC 18 2.5 f = 500MHz VCE=3V Ta=25°C f = 1GHz 2 14 12 Noise figure NF(dB) Insertion gain |S21e|2(dB) VCE=3V 16 Ta=25°C 10 8 C f = 1GHz 6 4 2 0 1 10 1.5 1 0.5 f = 500MHz 0 100 1 Collector-current IC(mA) 10 Collector-current IC(mA) |S21e|2-IC 18 NF-IC 2.5 f = 500MHz VCE=4V Ta=25°C f = 1GHz 2 14 Noise figure NF(dB) Insertion gain |S21e|2(dB) VCE=4V 16 Ta=25°C 12 10 f = 1GHz 8 6 4 1.5 1 f = 500MHz 0.5 2 0 1 10 0 100 1 Collector-current IC(mA) 10 18 VCE=5V 16 Ta=25°C NF-IC 2.5 f = 500MHz VCE=5V Ta=25°C f = 1GHz 2 Noise figure NF(dB) 14 12 10 8 f = 1GHz 6 4 2 0 1 10 100 Collector-current IC(mA) |S21e|2-IC Insertion gain |S21e|2(dB) 100 1.5 1 0.5 f = 500MHz 0 100 1 Collector-current IC(mA) 10 100 Collector-current IC(mA) 4 2009-12-01 MT3S113P 10 0 40 f1=500MHz f2=501MHz VCE=3V IC=50mA Ta=25°C Pout -10 -20 -30 IM3 -40 -50 -60 -70 -50 -40 -30 -20 -10 0 10 20 output intercept point OIP3(dBmW) 20 OIP3-IC Third order intermodulation distortion 30 Output level Pout(dBmW) Third order intermodulation distortion IM3(dBmW) IM3/Pout-Pin 35 30 f1=500MHz f2=501MHz Pin=-15dBmW VCE=3V Ta=25°C 25 20 15 10 1 Input level Pin(dBmW) 10 Collector-current IC(mA) -10 -20 -30 IM3 -40 -50 -60 -70 -50 30 20 10 0 -40 -30 -20 -10 0 10 20 30 25 20 15 10 1 10 100 Collector-current IC(mA) IM3/Pout-Pin OIP3-IC 40 Pout -10 -20 -30 -40 IM3 -50 -60 -70 -40 35 f1=500MHz f2=501MHz Pin=-15dBmW VCE=4V Ta=25°C Input level Pin(dBmW) f1=500MHz f2=501MHz VCE=5V IC=50mA Ta=25°C -50 output intercept point OIP3(dBmW) Pout -30 -20 -10 0 10 20 Input level Pin(dBmW) output intercept point OIP3(dBmW) 0 40 f1=500MHz f2=501MHz VCE=4V IC=50mA Ta=25°C Third order intermodulation distortion 10 OIP3-IC Third order intermodulation distortion Output level Pout(dBmW) 20 Output level Pout(dBmW) Third order intermodulation distortion IM3(dBmW) Third order intermodulation distortion IM3(dBmW) IM3/Pout-Pin 30 100 35 30 f1=500MHz f2=501MHz Pin=-15dBmW VCE=5V Ta=25°C 25 20 15 10 1 10 100 Collector-current IC(mA) 5 2009-12-01 MT3S113P ⊿Pout-Pout GP-Pin 1 18 17 0.5 3V 4V 5V 16 15 GP(dB) ⊿Pout 0 -0.5 -1 14 13 12 f=500MHz IC=50mA Ta=25°C -1.5 -2 -10 11 10 0 10 3V 4V 5V f=500MHz IC=50mA Ta=25°C -30 20 Output level Pout(dBmW) -20 -10 0 10 Input level Pin(dBmW) PC-Ta Collector power dissipation PC(mW) 1800 The device is mounted on a ceramicboard(25.4mm×25.4mm×0.8mm(t)) 1600 1400 1200 1000 800 600 Device only 400 200 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 6 2009-12-01 MT3S113P RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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