2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range S-MINI JEDEC TO-236 JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 12 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 0.5 μA Emitter cut-off current IEBO VEB = 4 V, IC = 0 ⎯ ⎯ 0.5 μA VCE = 6 V, IC = 1 mA 40 ⎯ 200 ⎯ Cre VCB = 6 V, f = 1 MHz ⎯ 0.70 ⎯ pF fT VCE = 6 V, IC = 1 mA ⎯ 550 ⎯ MHz VCB = 6 V, IE = −1 mA, f = 30 MHz ⎯ ⎯ 30 ps VCC = 6 V, IE = −1 mA, f = 100 MHz, Figure 1 ⎯ 2.5 5.0 dB 17 23 ⎯ dB DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant hFE (Note) Cc･rbb’ Noise figure NF Power gain Gpe Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 100 to 200 1 2010-08-24 2SC2714 L1: 0.8 mmφ silver plated copper wire, 4T, 10ID, 8 length Figure1 NF, Gpe Test Circuit y Parameter (typ.) (1) Common emitter (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C) Characteristics Symbol Typ. Unit Input conductance gie 2.9 mS Input capacitance Cie 10.2 pF ⎪yre⎪ 0.33 mS Phase angle of reverse transfer admittance θre −90 ° Forward transfer admittance |yfe| 40 mS Phase angle of forward transfer admittance θfe −20 ° Output conductance goe 45 μS Output capacitance Coe 1.1 pF Reverse transfer admittance (2) Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C) Characteristics Symbol Typ. Unit Input conductance gib 34 mS Input capacitance Cib −10 pF ⎪yrb⎪ 0.27 mS Phase angle of reverse transfer admittance θrb −105 ° Forward transfer admittance |yfb| 34 mS Phase angle of forward transfer admittance θfb 165 ° Output conductance gob 45 μS Output capacitance Cob 1.1 pF Reverse transfer admittance 2 2010-08-24 2SC2714 Marking 3 2010-08-24 2SC2714 4 2010-08-24 INPUT CONDUCTANCE gib (mS) 2SC2714 BASE 5 2010-08-24 2SC2714 BASE 6 2010-08-24 2SC2714 yre－f PC – Ta COLLECTOR POWER DISSIPATION PC (mW) 120 100 80 60 40 20 0 0 20 40 60 80 AMBIENT TEMPERATURE 7 100 Ta 120 140 (℃) 2010-08-24 2SC2714 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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