ANADIGICS ALT6701RM45Q7

ALT6701
HELP4 UMTS2100 (Band 1)
LTE, WCDMA, CDMA Multimode PAM
TM
DATA SHEET - Rev 2.8
FEATURES
• CDMA/EVDO, WCDMA/HSPA and LTE
Compliant
• 4th Generation HELPTM technology
ALT6701
• High Efficiency (R99 waveform):
• 41 % @ POUT = +28.4 dBm
• 31 % @ POUT = +17 dBm
• 21 % @ POUT = +13.5 dBm
• 26 % @ POUT = +9 dBm
• 13 % @ POUT = +3.5 dBm
• Low Quiescent Current: 2 mA
• Low Leakage Current in Shutdown Mode: <5 µA
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
• Internal Voltage Regulator
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port.
• Internal DC blocks on IN/OUT RF ports
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
• Optimized for a 50 Ω System
• 1.8 V Control Logic
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Band 1 WCDMA/HSPA Wireless Devices
GND at Slug (pad)
• Band 1 LTE Wireless Devices
• Band Class 6 CDMA/EVDO Wireless Devices
VBATT
11
RFIN
22
VMODE2
33
VMODE1
VEN
10
10
VCC
PRODUCT DESCRIPTION
The ALT6701 HELP4TM PA is a 4th generation HELPTM
product for LTE and WCDMA devices operating in
UMTS2100 (Band 1) and for CDMA devices operating
in Band Class 6. This PA incorporates ANADIGICS’
HELP4TM technology to deliver exceptional efficiency
at low power levels and low quiescent current without
the need for external voltage regulators or converters.
The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
mode with low leakage current increase handset
03/2012
9
RFOUT
88
CPLIN
44
77
GND
55
6
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
CPLOUT
ALT6701
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
VMODE2
Mode Control Voltage 2
4
VMODE1
Mode Control Voltage 1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
PA Enable Voltage
Coupler Output
Supply Voltage
Data Sheet - Rev 2.8
03/2012
VCC
ALT6701
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VMODE2, VEN)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f)
1920
-
1980
MHz
Supply Voltage (VCC)
+3.1
+3.4
+4.35
V
POUT < +28.4 dBm
Enable Voltage (VEN)
+1.35
0
+1.8
-
+3.1
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE1,VMODE2)
+1.35
0
+1.8
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
WCDMA / UMTS Output Power (1, 3)
R99, HPM
HSPA (MPR=0), HPM
LTE(2)
R99, MPM
LTE(2) & HSPA (MPR=0), MPM
R99, LPM
LTE(2) & HSPA (MPR=0), LPM
27.6
26.6
26.2
8.2
7.2
28.4
27.4
27.0
17.0
16.0
9.0
8.0
-
CDMA Output Power (1, 3)
HPM
MPM
LPM
26.9
7.2
27.7
16.0
8.0
-
Case Temperature (TC)
-40
-
+90
dBm
COMMENTS
3GPP TS 34.121-1, Rel 8
Table C.11.1.3 for WCDMA
SUBTEST 1
TS 36.101 Rel 8 for LTE
dBm
CDMA 2000, RC-1
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over
the conditions defined in the electrical specifications.
Notes:
(1) For Operation at 3.1 V, POUT is derated by 0.8 dB.
(2) LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK.
(3) For Operation at +105 °C, POUT is derated by 1.0 dB.
3
Data Sheet - Rev 2.8
03/2012
ALT6701
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
16
7.5
27
19
10
29
22
12.5
ACLR E-UTRA
at 6 10 MHz offset
-
-39
-40
-40
ACLR UTRA
at 6 7.5 MHz offset
-
ACLR UTRA
at 6 12.5 MHz offset
COMMENTS
POUT
VMODE1 VMODE2
dB
POUT = +27 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-34
-34
-34
dBc
POUT = +27 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-40
-40
-41
-36.5
-36.5
-36.5
dBc
POUT = +27 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-
-59
-59
<-60
-40
-40
-40
dBc
POUT = +27 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Power-Added Efficiency
31
24
18
35
28
23
-
%
POUT = +27 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
0V
Quiescent Current (Icq)
Low Bias Mode
-
2
3.2
mA
through Vcc pin
1.8 V
1.8 V
NS_05 PHS Emissions
-
-45
-42
Mode Control Current
-
0.08
0.15
mA
through VMODE pins, VMODE1,2 = 1.8 V
Enable Current
-
0.04
0.1
mA
through VEN pin, VEN = 1.8 V
BATT Current
-
0.8
1.5
mA
through VBATT pin, VMODE1,2 = 1.8 V
Leakage Current
-
<5
10
mA
VBATT = VCC = +4.35 V
VEN = 0 V, VMODE1,2 = 0 V
Noise Power
-
-136
-138
-144
-38
-134
-35
Harmonics
2fo
3fo, 4fo
-
-43
-46
-35
-38
dBc
Coupling Factor
-
20
-
dB
Directivity
-
20
-
dB
Daisy Chain Insertion Loss
-
<0.25
-
dB
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
dBm/300 kHz POUT < 27 dBm
dBm/Hz
-
-
<-70
dBc
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
4
Data Sheet - Rev 2.8
03/2012
2110 MHz to 2170 MHz
GPS Band
ISM Band
B34 2010 - 2025 MHz
POUT < +27 dBm
POUT < +27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
ALT6701
Table 5: Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
16
7.5
27
19
10
29
22
12.5
ACLR1 at 5 MHz offset (1)
-
-41
-41
-41
ACLR2 at 10 MHz offset
-
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
5
COMMENTS
POUT
VMODE1
VMODE2
dB
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +9 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-37.5
-37.5
-37.5
dBc
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +9 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-53
-56
-60
-48
-48
-48
dBc
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +9 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
37
27
20
-
41
31
21
26
13
-
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +13.5 dBm
POUT = +9 dBm
POUT = +3.5 dBm
0V
1.8 V
1.8 V
1.8 V
1.8 V
0V
0V
0 V
1.8 V
1.8 V
-
-
-70
dBc
8:1
-
-
VSWR
%
Data Sheet - Rev 2.8
03/2012
POUT < +28.4 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
ALT6701
Table 6: Electrical Specifications - CDMA Operation (CDMA 2000, RC-1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
16
7.5
27
19
10
29
22
13
Adjacent Channel Power
at ± 1.25 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-50
-54
-56
Adjacent Channel Power
at ± 1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
34
25
18
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
6
COMMENTS
POUT
VMODE1
VMODE2
dB
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-46.5
-46.5
-46.5
dBc
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-56
<-60
<-60
-53
-53
-53
dBc
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
38
29
22
-
%
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-
-
-70
dBc
8:1
-
-
VSWR
Data Sheet - Rev 2.8
03/2012
POUT < +27.7 dBm
In-Band VSWR <5:1
Out-Of-Band VSWR < 10:1
Applies to all operating conditions
Applies over full operating range
ALT6701
PERFORMANCE DATA PLOTS:
(LTE Operation at 1950 MHz and 50 V system)
Figure Figure
4: WCDMA
Gain
(dB)over
over
Temperature
4: WCDMA
Gain (dB)
Temperature
(Vbatt=VCC=3.4V)
(VBATT
= VCC = 3.4 V)
Figure
5: 5:LTE
(dB)
Voltage
Figure
LTE Gain
Gain (dB)
overover
Voltage
C = 25) 8C)
(T(Tc=25C
35
30
-30C 3.4Vcc
30
25C 3.2Vcc
25C 3.4Vcc
25C 3.4Vcc
25
90C 3.4Vcc
25C 4.2Vcc
25
20
Gain (dB)
Gain (dB)
20
15
15
10
10
5
5
0
0
5
10
15
20
25
0
30
0
Pout (dBm)
45
Figure
LTEPAE
PAE (%)
over
Temperature
Figure
6: 6:LTE
(%)
over
Temperature
(Vbatt=VCC=3.4V)
(TC = 25 8C)
40
25C 3.4Vcc
40
25C 3.2Vcc
35
90C 3.4Vcc
35
15
Pout (dBm)
20
25
30
25C 4.2Vcc
25C 3.4Vcc
30
Efficiency
25
25
20
20
15
15
10
10
5
5
0
0
0
5
10
15
20
25
30
0
Pout (dBm)
Figure 8:Figure
LTE 8:ACLR1
(dBc)
over
Temperature
LTE ACRL1
(dBc) over
Temperature
= VCC = 3.4 V)
(VBATT(Vbatt=VCC=3.4V)
-20
-20
25C 3.4Vcc
ACLR1 (5MHz dBc)
ACLR1 (5MHz dBc)
-40
-45
-50
15
Pout (dBm)
20
25
30
25C 3.4Vcc
25C 4.2Vcc
90C 3.4Vcc
-35
10
25C 3.2Vcc
-25
-30
5
9: LTE
ACLR1 (dBc)
overover
Voltage
FigureFigure
9: LTE
ACLR1
(dBc)
Voltage
(T(Tc=25C)
C = 25 8C)
-30C 3.4Vcc
-25
-30
-35
-40
-45
-50
-55
0
5
10
15
Pout (dBm)
7
10
FigureFigure
7: LTE
PAE
over
Voltage
7: LTE
PAE(%)
(%) over
Voltage
= 25 8C)
(TC (Tc=25C)
45
-30 3.4cc
30
Efficiency (%)
5
20
25
30
-55
0
5
10
15
Pout (dBm)
Data Sheet - Rev 2.8
03/2012
20
25
30
ALT6701
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
to the VMODE pins. The Bias Control table below lists
the recommended modes of operation for various
applications.
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the VEN, VMODE1 and VMODE2 voltages.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At ~17dBm - 6 dBm,
the PA could be switched to Medium Power Mode. For
POUT levels < ~8 dBm, the PA could be switched to Low
Power Mode for extremely low current consumption.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
Table 7: Bias Control
POUT
LEVELS
BIAS
MODE
VEN
VMODE1
VMODE2
vcc
VBATT
Low power
(Low Bias Mode)
< + 8 dBm
Low
+1.8 V
+1.8 V
+1.8 V
3.1 - 4.35 V
> 3.1 V
Med power
(Medium Bias Mode)
> 6 dBm
< 17 dBm
Low
+1.8 V
+1.8 V
0V
3.1 - 4.35 V
> 3.1 V
> + 16 dBm
High
+1.8 V
0V
0V
3.1 - 4.35 V
> 3.1 V
-
Shutdown
0V
0V
0V
3.1 - 4.35 V
> 3.1 V
APPLICATION
High power
(High Bias Mode)
Shutdown
VBATT
VCC
C5
2.2 µF
C1
0.1 µF
GND at slug
1
2
RFIN
VMODE2
VMODE1
VEN
VBATT
VCC
RFIN
RFOUT
10
C3
33 pF
9
3
VMODE2
CPLIN
8
4
VMODE1
GND
7
5
VEN
RFOUT
CPLOUT 6
Data Sheet - Rev 2.8
03/2012
C4
2.2 µF ceramic
CPLIN
Figure 10: Evaluation Board Schematic
8
C2
0.1 µF
CPLOUT
ALT6701
PACKAGE OUTLINE
Figure 11: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code (YYWW)
6701R
LLLLNN
YYWWCC
Part Number
Lot Number
Country Code(CC)
Figure 12: Branding Specification - M45 Package
9
Data Sheet - Rev 2.8
03/2012
ALT6701
PCB AND STENCIL DESIGN GUIDELINE
Figure 13: Recommended PCB Layout Information
10
Data Sheet - Rev 2.8
03/2012
ALT6701
COMPONENT PACKAGING
Pin 1
Figure 14: Carrier Tape
Figure 15: Reel
11
Data Sheet - Rev 2.8
03/2012
ALT6701
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ALT6701RM45Q7
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
ALT6701RM45P9
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
COMPONENT PACKAGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
Data Sheet - Rev 2.8
03/2012