AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 11A RDS(ON) (at VGS=10V) < 9.6mΩ RDS(ON) (at VGS=4.5V) < 13mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: December 2010 Steady-State Steady-State V A 9 60 IAS, IAR 30 A EAS, EAR 45 mJ 2 W 1.3 TJ, TSTG Symbol t ≤ 10s ±20 IDM PD TA=70°C Units V 11 ID TA=70°C C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4838 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 60 VGS=10V, ID=11A TJ=125°C VGS=4.5V, ID=10A 100 nA 2 2.6 V 8 9.6 11.5 14 10.4 13 A gFS Forward Transconductance VDS=5V, ID=11A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 1 V 2.5 A 860 1080 1300 pF VGS=0V, VDS=15V, f=1MHz 125 180 240 pF 65 110 160 pF VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 18 22 nC Qg(4.5V) Total Gate Charge 6.4 8 9.6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=11A 3.4 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs 7 8.5 10 Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs 10 13 16 VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω 6 ns 3 ns 21 ns 3 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: December 2010 www.aosmd.com Page 2 of 6 AO4838 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 120 10V 4.5V 6V VDS=5V 100 100 7V 4.0V 80 ID(A) ID (A) 80 60 3.5V 60 40 40 20 125°C 25°C 20 VGS=3.0V 0 0 0 1 2 3 4 0 5 12 4 6 8 Normalized On-Resistance 1.6 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 8 VGS=10V VGS=4.5V ID=10A 1.4 1.2 VGS=10V ID=11A 1 17 5 2 10 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=11A 1.0E+01 40 1.0E+00 15 IS (A) RDS(ON) (mΩ Ω) 20 125°C 125°C 1.0E-01 1.0E-02 1.0E-03 10 25°C 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: December 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4838 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 VDS=15V ID=11A 1600 1400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 Crss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 100 30 100.0 TA=25°C IAR (A) Peak Avalanche Current 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TA=100°C 10µs RDS(ON) limited 10.0 10 TA=125°C TA=150°C ID (Amps) 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: December 2010 www.aosmd.com Page 4 of 6 AO4838 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: December 2010 www.aosmd.com Page 5 of 6 AO4838 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: December 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6