AO4805 30V Dual P-Channel MOSFET General Description Product Summary The AO4805 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-20V) VDS -30V -9A RDS(ON) (at VGS=-20V) < 15mΩ RDS(ON) (at VGS =-10V) < 18mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±25 V -9 ID TA=70°C Maximum -30 -7 A IDM -50 Avalanche Current C IAS, IAR 33 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 54 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: December 2010 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4805 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -50 TJ=55°C -5 VDS=0V, VGS=±25V ±100 VGS=-20V, ID=-9A -2.3 -2.8 µA nA V A 10 VGS=-10V, ID=-8A Units 15 12 18 13 20 mΩ RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A 29 mΩ gFS Forward Transconductance VDS=-5V, ID=-9A 27 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-9A 1.2 mΩ -1 V -2.5 A 2600 pF 370 pF 295 pF 2.4 3.6 30 39 Ω nC 4.6 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 9.4 ns tD(off) Turn-Off DelayTime 24 ns tf Turn-Off Fall Time 12 ns trr Qrr VGS=-10V, VDS=-15V, RL=1.67Ω, RGEN=3Ω IF=-9A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs 30 40 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: December 2010 www.aosmd.com Page 2 of 5 AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -5V -10V VDS=-5V -6V -4.5V 60 -ID(A) -ID (A) 60 40 40 -4V 20 25°C 125°C 20 VGS=-3.5V 0 0 1 2 3 4 5 0 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 1.6 15 Normalized On-Resistance RDS(ON) (mΩ ) 20 2 3 (Volts) 4 5 V GS Figure 2: Transfer Characteristics (Note E) VGS=-10V 10 VGS=-20V 5 VGS=-10V ID=-8A 1.4 1.2 VGS=-20V ID=-9A 1 17 5 2 10 0.8 0 3 6 9 12 15 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 35 1.0E+01 ID=-9A 30 1.0E+00 25 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 40 20 25°C 125°C 1.0E-02 15 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 7: December 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-9A 2500 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2000 1500 1000 Coss 2 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 1000.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 100.0 10.0 Power (W) ID (Amps) 1000 10µs RDS(ON) limited 100µs 1ms 10ms 1.0 TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 7: December 2010 www.aosmd.com Page 4 of 5 AO4805 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 7: December 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5