AO4813 30V Dual P-Channel MOSFET General Description Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -7.1A RDS(ON) (at VGS=-10V) < 25mΩ RDS(ON) (at VGS = -4.5V) < 40mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -7.1 ID TA=70°C Maximum -30 A -5.6 IDM -40 Avalanche Current C IAS, IAR -27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: April 2011 2 PD TA=70°C Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 1.3 RθJA RθJL www.aosmd.com Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4813 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS=-10V, ID=-7.1A 33 VGS=-4.5V, ID=-5.6A 27 40 VDS=-5V, ID=-7.1A 24 Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C -0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 1040 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA nA V mΩ mΩ S -1 V -2.5 A 1250 pF 180 2 Units A 24 gFS Output Capacitance -2.5 25 Static Drain-Source On-Resistance Reverse Transfer Capacitance -2.0 17 RDS(ON) Crss Max V VDS=-30V, VGS=0V IDSS Coss Typ pF 125 175 pF 4 6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19 nC Qg(4.5V) Total Gate Charge 9.6 nC 3.6 nC VGS=-10V, VDS=-15V, ID=-7.1A Qgs Gate Source Charge Qgd Gate Drain Charge 4.6 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 5.5 ns VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=500A/µs IF=-7.1A, dI/dt=500A/µs 26 ns 9 ns 11.5 ns nC 25 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: April 2011 www.aosmd.com Page 2 of 6 AO4813 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 -10V VDS=-5V -7V -5V 50 30 -4.5V -ID(A) -ID (A) 40 30 20 20 -3.5V 10 125°C 25°C 10 VGS=-3.0V 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 3 4 5 Normalized On-Resistance 1.8 30 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 25 VGS=-4.5V 20 15 VGS=-10V 1.6 VGS=-10V ID=-7.1A 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-5.6A 0.8 10 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 1.0E+02 ID=-7.1A 1.0E+01 50 40 40 -IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 30 125°C 1.0E-01 1.0E-02 1.0E-03 20 25°C 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 9: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4813 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 VDS=-15V ID=-7.1A 1400 Ciss 1200 Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 Coss 400 2 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 100 -IAR (A) Peak Avalanche Current Crss 0 20 0 TA=25°C 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 TA=100°C TA=150°C -ID (Amps) 10.0 TA=125°C 10 5 RDS(ON) limited 10µs 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 -VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 9: April 2011 www.aosmd.com Page 4 of 6 AO4813 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 9: April 2011 www.aosmd.com Page 5 of 6 AO4813 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 9: April 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6