TOSHIBA RN2116MFV

RN2114MFV∼RN2118MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114MFV,RN2115MFV,RN2116MFV
RN2117MFV,RN2118MFV
Unit: mm
z Complementary to RN1114MFV to RN1118MFV
1
2
0.32±0.05
3
0.13±0.05
z A wide range of resistor values is available for use in various circuits.
0.4
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
0.8±0.05
0.4
z
0.8±0.05
Ultra-small package, suited to very high density mounting
1.2±0.05
0.5±0.05
z
1.2±0.05
0.22±0.05
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
VESM
Type No.
R1 (kΩ)
R2 (kΩ)
RN2114MFV
1
10
RN2115MFV
2.2
10
RN2116MFV
4.7
10
RN2117MFV
10
4.7
RN2118MFV
47
10
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN2114MFV
to
RN2118MFV
RN2114MFV
−5
RN2115MFV
−6
RN2116MFV
Junction temperature
Storage temperature range
−7
RN2117MFV
−15
RN2118MFV
−25
Collector current
Collector power dissipation
VEBO
RN2114MFV
to
RN2118MFV
V
IC
−100
mA
PC(Note1)
150
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt )
1
2009-04-17
RN2114MFV∼RN2118MFV
Land Pattern Example
unit: mm
0.5
0.45
1.15
0.4
0.45
0.4
0.4
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Test
Circuit
Min
Typ.
Max
VCB = −50V, IE = 0
―
―
−100
VCE = −50V, IB = 0
―
―
−500
RN2114MFV
VEB = −5V, IC = 0
−0.35
―
−0.65
RN2115MFV
VEB = −6V, IC = 0
−0.37
―
−0.71
VEB = −7V, IC = 0
−0.36
―
−0.68
RN2117MFV
VEB = −15V, IC = 0
−0.78
―
−1.46
RN2118MFV
VEB = −25V, IC = 0
−0.33
―
−0.63
―
―
30
―
―
―
−0.1
−0.3
RN2114MFV
−0.5
―
−2.0
RN2115MFV
−0.6
―
−2.5
−0.7
―
−2.5
RN2117MFV
−1.5
―
−3.5
RN2118MFV
−2.5
―
−10.0
RN2114MFV
−0.3
―
−0.9
RN2115MFV
−0.3
―
−1.0
−0.3
―
−1.1
RN2117MFV
−0.3
―
−3.0
RN2118MFV
−0.5
―
−5.7
―
0.9
―
RN2114MFV
0.7
1.0
1.3
RN2115MFV
1.54
2.2
2.86
3.29
4.7
6.11
RN2117MFV
7
10
13
RN2118MFV
32.9
47
61.1
RN2114MFV
―
0.1
―
RN2115MFV
―
0.22
―
―
0.47
―
RN2117MFV
―
2.13
―
RN2118MFV
―
4.7
―
RN2114MFV to 2118MFV
Symbol
ICBO
―
ICEO
RN2116MFV
RN2114MFV to 16MFV,
18MFV
IEBO
hFE
―
―
Test Condition
VCE = −5V, IC = −10mA
RN2117MFV
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2114MFV to 2118MFV VCE(sat)
RN2116MFV
RN2116MFV
RN2114MFV to 2118MFV
RN2116MFV
RN2116MFV
VI (ON)
VI (OFF)
Cob
R1
R1/R2
―
―
―
―
―
―
2
IC = −5mA, IB = −0.5mA
VCE = −0.2V, IC = −5mA
VCE = −5V, IC = −0.1mA
VCB = −10V, IE = 0,
f = 1MHz
―
―
50
Unit
nA
mA
V
V
V
pF
kΩ
2009-04-17
RN2114MFV∼RN2118MFV
RN2114MFV
-100
IC - VI(ON)
RN2115MFV
COLLECTOR CURRENT　IC (mA)
COLLECTOR CURRENT　IC (mA)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
-25
25
-1
-0.1
-0.1
-1
COMMON EMITTER
VCE = -0.2V
-10
25
-1
-0.1
-0.1
-10
-1
-100
COMMON EMITTER
VCE = -0.2V
COLLECTOR CURRENT　IC (mA)
COLLECTOR CURRENT　IC (mA)
IC - VI(ON)
RN2117MFV
-100
-10
Ta = 100°C
25
-1
-25
-0.1
-0.1
-1
-10
RN2118MFV
COMMON EMITTER
VCE = -0.2V
-10
-25
Ta = 100°C
25
-1
-0.1
-0.1
-100
INPUT VOLTAGE　VI(ON) ( V)
-100
-10
INPUT VOLTAGE　VI(ON) ( V)
IC - VI(ON)
RN2116MFV
-25
Ta = 100°C
INPUT VOLTAGE　VI(ON) ( V)
COLLECTOR CURRENT　IC (mA)
IC - VI(ON)
-100
-1
-10
-100
INPUT VOLTAGE　VI(ON) ( V)
IC - VI(ON)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
-25
25
-1
-0.1
-1
-10
-100
INPUT VOLTAGE　VI(ON) ( V)
3
2009-04-17
RN2114MFV∼RN2118MFV
IC - VI(OFF)
RN2114MFV
COMMON EMITTER
VCE = -5V
-1000
COLLECTOR CURRENT　IC (μA)
COLLECTOR CURRENT　IC (μA)
-10000
-25
Ta = 100°C
25
-100
-10
COMMON EMITTER
VCE = -5V
-1000
25
Ta = 100°C
-25
-100
-10
0-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
0-0
INPUT VOLTAGE　VI(OFF) ( V)
RN2116MFV
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE　VI(OFF) ( V)
IC - VI(OFF)
IC - VI(OFF)
RN2117MFV
-10000
-10000
COMMON EMITTER
VCE = -5V
COLLECTOR CURRENT　IC (μA)
COLLECTOR CURRENT　IC (μA)
IC - VI(OFF)
RN2115MFV
-10000
-1000
Ta = 100°C
25
-25
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1000
Ta = 100°C
25
-25
-100
-10
-0.8
-1.6
INPUT VOLTAGE　VI(OFF) ( V)
RN2118MFV
COMMON EMITTER
VCE = -5V
-1.2
-1.6
-2
-2.4
-2.8
-3.2
INPUT VOLTAGE　VI(OFF) ( V)
IC - VI(OFF)
COLLECTOR CURRENT　IC (μA)
-10000
COMMON EMITTER
VCE = -5V
-1000
Ta = 100°C
25
-25
-100
-10
-1
-2
-3
-4
-5
-6
INPUT VOLTAGE　VI(OFF) ( V)
4
2009-04-17
RN2114MFV∼RN2118MFV
hFE - IC
RN2114MFV
RN2115MFV
1000
COMMON EMITTER
VCE = -5V
DC CURRENT GAIN　hFE
DC CURRENT GAIN　hFE
COMMON EMITTER
VCE = -5V
Ta = 100°C
100
25
-25
10
Ta = 100°C
100
25
-25
10
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
1000
RN2117MFV
hFE - IC
RN2116MFV
hFE - IC
COMMON EMITTER
VCE = -5V
DC CURRENT GAIN　hFE
DC CURRENT GAIN　hFE
-100
1000
Ta = 100°C
100
-10
COLLECTOR CURRENT　IC (mA)
COMMON EMITTER
VCE = -5V
25
-25
100
Ta = 100°C
25
-25
10
1
10
-1
-10
-1
-100
RN2118MFV
-10
-100
COLLECTOR CURRENT　IC (mA)
COLLECTOR CURRENT　IC (mA)
1000
hFE - IC
1000
hFE - IC
DC CURRENT GAIN　hFE
COMMON EMITTER
VCE = -5V
Ta = 100°C
100
25
-25
10
-1
-10
-100
COLLECTOR CURRENT　IC (mA)
5
2009-04-17
RN2114MFV∼RN2118MFV
VCE(sat) - IC
RN2114MFV
RN2115MFV
COMMON EMITTER
IC/IB = 10
Ta = 100°C
-0.1
25
-25
-0.01
COMMON EMITTER
IC/IB = 10
Ta = 100°C
-0.1
25
-25
-0.01
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
RN2116MFV
-1
VCE(sat) - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
Ta = 100°C
-0.1
-10
-100
COLLECTOR CURRENT　IC (mA)
COMMON EMITTER
IC/IB =10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
VCE(sat) - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
-1
25
-25
RN2117MFV
VCE(sat) - IC
COMMON EMITTER
IC/IB = 10
Ta = 100°C
-0.1
25
-25
-0.01
-0.01
-1
-10
-1
-100
RN2118MFV
-10
-100
COLLECTOR CURRENT　IC (mA)
COLLECTOR CURRENT　IC (mA)
VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
-1
COMMON EMITTER
IC/IB = 10
-0.1
Ta = 100°C
25
-25
-0.01
-1
-10
-100
COLLECTOR CURRENT　IC (mA)
6
2009-04-17
RN2114MFV∼RN2118MFV
Type Name
Marking
RN2114MFV
YQ
RN2115MFV
YS
RN2116MFV
YT
RN2117MFV
YU
RN2118MFV
YW
7
2009-04-17
RN2114MFV∼RN2118MFV
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2009-04-17