Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
ML46580S-992
Preliminary Specifications
High Reliability Semiconductor – Beam Lead
Gallium Arsenide Tuning Varactor Diode
Features
•
•
•
•
•
Package Outline
Constant Gamma of 1.25
Strong Beam Construction
Low Parasitic Capacitance
High Q
Close Capacitance Tracking
B
E
Description
A
B
C
D
∼
The ML46580S-992 is a Gallium Arsenide Beam Lead Tuning
Varactor having a Hyperabrupt junction with a resultant constant
gamma characteristic. The constant gamma, high Q values and the
elimination of package parasitics are extremely beneficial for the
linear tuning of voltage controlled oscillators at frequencies above
20 GHz.
∼
CATHODE BEAM
F
DIE THICKNESS
This device has been tested previously for space application in
accordance with the requirements of ESA Generic Specifications
PSS-01-608 and ESA/SCC 5010.
DIM
A
B
C
D
E
F
High Reliability Beam Lead diodes can be supplied using the
same procedures established for chip diodes. These procedures
detailed in M/A-COM control document MP3021-001 incorporate the essential elements of ESA/SCC 5010.
M/A-COM can also provide Gallium Arsenide Beam Lead Tuning Varactor diodes with a constant gamma of 1.0 and also with
capacitance up to 2pF.
INCHES
Min.
0.012
0.010
0.006
0.004
0.007
—
MILLIMETERS
Max.
0.014
—
0.008
0.006
0.009
0.004
Min.
0.305
0.254
0.152
0.102
0.178
0.305
Max.
0.356
—
0.203
0.152
0.229
0.1026
The Semiconductor Master Catalogue, available on request, contains detailed information of the following additional Tuning
Varactor types many of which are suitable for space application.
•
•
•
Surface Mount (SOT-23) Tuning Varactors
Axial Lead Tuning Varactors
Silicon Abrupt and Hyperabrupt Junction Tuning Varactors
•
•
GaAs Abrupt Junction Tuning Varactors
GaAs Hyperabrupt Junction Tuning Varactors with Constant
Gamma 0.75, 1.25, 1.5
Maximum Ratings (Tamb = +25°C)
No.
1
2
3
4
5
Characteristics
Power Dissipation
Reverse Voltage
Forward Current
Operating Temperature
Storage Temperature
Symbol
PO
VR
IF
TOP
TSTO
Maximum Ratings
25.0
18
50
-65 to +150
-65 to +150
Units
mW
V
mA
°C
°C
Remarks
See Note 1
See Note 2
Notes:
1. Derate linearly to 0 mW from 25°C to 150°C
2. Derate linearly to 0 mA from 25°C to 150°C
V1.00
M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Electrical Measurements at Room Temperature d.c. and a.c. Parameters
No.
1
2
3
4
Characteristics
Forward Voltage
Reverse Current 1
Reverse Current 2
Junction Capacitance
Symbol
VF1
I R1
I R2
CJ 4
MIL-STD-750
Test Method
4011
4016
4016
4001
5
Quality Factor
Q4
see Note 2
6
Total Capacitance Ratio
C T2 /C T12
4001
7
Gamma
γ
see Note 4
Test
Conditions
IF = 10µA
VR = -12V
VR = 18V
VR = 4V
F = 1 MHz
VR = 4.0 v
F = 1 MHz
VR = 2.0 v
VR = 12 v
F = 1 MHz
see Note 3
VR = 2.0V to
VR = 12V
Limits
Max.
1.4
20
10
0.55
Min.
—
—
—
0.45
Units
V
nA
µA
pF
3000
—
—
4.5:1
6.5:1
—
1.125
1.375
—
Notes:
2. Quality Factor is measured on a sample of 10 Beam Lead devices selected at random from the production wafer and assembled in a ceramic
microstrip package. The measurement is carried out at a test frequency above 1 GHz and extrapolated to 50 MHz.
3. Total Capacitance Ratio is measured on the sample of 10 devices used for Q measurement.
4. Measurement/Calculation of Capacitance-Voltage Slope Exponent (Gamma).
The capacitances of a sample of 10 diodes taken at random from the production lot are measured at 2.0, 3.0, 4.0, 6.0, 8.0, 9.0, 10.0, 12.0, volts
reverse bias voltage. Junction capacitance CJ is calculated by subtracting the package capacitance of the test package. The Gamma values are
then calculated between each pair of adjacent voltages using the following formula:
γ =
log10 {Cj (VR1) / Cj (VR2) }
log10 {VR2 + 1.3 / VR1 + 1.3}
Electrical Measurements at High and Low Temperature, -55°C to +125°C
No.
1
Characteristics
Reverse Current
Symbol
IR
MIL-STD-750
Test Method
4016
Test
Conditions
V R = 12V
Min.
—
Limits
Max.
50
Units
µA
Parameter Drift Values
No.
2
3
Characteristics
Reverse Current
Forward Voltage
Symbol
IR
VF
Change Limits ∆
± 10 nA or ± 100% whichever is the
greater referred to the initial measurement
± 100 mV or ± 100%
Test Conditions
VR = 12 Volts
IF = 10 µA
V1.00
M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Conditions for High Temperature Reverse Bias Burn-In
No.
2
3
Characteristics
Reverse Voltage
Ambient Temperature
Symbol
VR
Tamb
Conditions
14 ± 1
+50 +0, -5
Units
V
°C
Symbol
VR
Tamb
Conditions
14 ± 1
+150 +0, -5
Units
V
°C
Conditions for Operating Life Tests
No.
1
2
Characteristics
Reverse Voltage
Ambient Temperature
Electrical Measurements at Intermediate Points and Completion of Endurance Testing
No.
1
2
3
Characteristics
Forward Voltage
Reverse Current
Junction Capacitance
Symbol
VF
IR
CJ 4
MIL-STD-750
Test Method
4011
4016
4001
Test
Conditions
I F = 10 µA
VR = 12 Volts
VR = 4 Volts
F = 1 MHz
CJ =C TOTAL - C PACKAGE
Min.
0.45
Limits
Max.
1.4
20
Units
V
nA
pF
0.55
Electrical Measurements During and on Completion of Radiation Testing (only if requested)
No.
1.
Characteristics
Reverse Voltage
Symbol
VR
MIL-STD-750
Test Method
4016
Test
Conditions
V R= 12 Volts
∆
20 nA or 200%
whichever is greater
V1.00
M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Typical Performance Curves (MA46580 Series)
CAPACITANCE (pF)
CAPACITANCE (pF)
Gamma = 1.0 ± 10% from 2-12 Volts (MA46585 through to MA46589)
Gamma = 1.25 ± 10% from 2-12 Volts (MA46580 through to MA46584)
REVERSE BIAS VOLTAGE (VOLTS)
REVERSE BIAS VOLTAGE (VOLTS)
MA46585 – 46589 Capacitance vs Voltage
CAPACITANCE (pF)
CAPACITANCE (pF)
MA46580 – 46584 Capacitance vs Voltage
REVERSE BIAS VOLTAGE (VOLTS)
Capacitance RatioC T-2 /C TV for MA46580-46584 Series
REVERSE BIAS VOLTAGE (VOLTS)
Capacitance Ratio C T-2 /C TV for MA46585-46589 Series
V1.00
M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.