2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5 –50 10 2N5547 –0.5 to –4.5 –50 1.5 –50 15 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise High CMRR: 100 dB DESCRIPTION The 2N5545/5546/5547JANTX/JANTXV are monolithic dual n-channel JFETs designed to provide high input impedance (IG < 50 pA) for general-purpose differential amplifiers. The 2N5545 features minimum system error and calibration (5 mV offset maximum). TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70253 S-04031—Rev. C, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 2N5545/46/47/JANTX/JANTXV Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5545 Symbol Test Conditions Typa V(BR)GSS IG = –1 mA, VDS = 0 V VGS(off) Saturation Drain Currentb IDSS Gate Reverse Current IGSS Parameter 2N5546 Max 2N5547 Min Max Min Min Max Unit –57 –50 –50 VDS = 15 V, ID = 0.5 nA –2 –0.5 –4.5 –0.5 –4.5 –0.5 –4.5 VDS = 15 V, VGS = 0 V 3 0.5 8 0.5 8 0.5 8 mA VGS = –30 V, VDS = 0 V –10 –100 –100 –100 pA –20 –150 –150 –150 nA –50 –50 –50 pA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current Gate-Source Forward Voltage –50 V TA = 150_C IG VDG = 15 V, ID = 200 mA –3 VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en Noise Figure NF 2.5 VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz 1.5 6.0 1.5 6.0 1.5 6.0 mS mS 2 25 25 25 3.5 6 6 6 1.3 2 2 2 20 180 200 nV⁄ √Hz 0.1 3.5 5 dB pF VDS = 15 V, ID = 200 mA f = 10 Hz RG = 1 MW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratioc Transconductance Ratioc |V G7S1 – V GS2| D|V GS1 – V GS2| DT I DSS1 I DSS2 gfs1 gfs2 VDG = 15 V, ID = 50 mA 5 10 15 VDG = 15 V, ID = 200 mA 5 10 15 VDG = 15 V, ID = 200 mA TA = –55 to 125_C 10 20 40 VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.9 1 0.9 1 VDS = 15 V, ID = 200 mA f = 1 kHz 0.99 0.97 1 0.95 1 0.9 1 mV mV/ _C Differential Output Conductance |g os1 – gos2| VDG = 15 V, VGS = 0 V f = 1 kHz 0.1 1 2 3 mS Differential Gate Current |I G1 – I G2| VDG = 15 V, ID = 200 mA TA = 125_C 1 5 5 5 nA Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 NQP Document Number: 70253 S-04031—Rev. C, 04-Jun-01 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 3 2.6 IDSS gfs 3 2.2 2 1.8 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1 1.4 1 0 0 –1 –2 –3 –4 IG @ ID = 200 mA 10 nA TA = 125_C IG – Gate Leakage 4 100 nA gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 5 1 nA 50 mA IGSS @ 125_C 100 pA 50 mA 200 mA 10 pA IGSS @ 25_C TA = 25_C 1 pA 0.1 pA 0 –5 10 VGS(off) – Gate-Source Cutoff Voltage (V) 20 30 40 VDG – Drain-Gate Voltage (V) Output Characteristics Output Characteristics 5 5 VGS(off) = –3 V VGS = 0 V VGS(off) = –2 V VGS = 0 V 3 –0.2 V –0.4 V 2 –0.6 V –0.8 V –1.0 V 1 ID – Drain Current (mA) ID – Drain Current (mA) –0.3 V 4 4 –0.6 V 3 –0.9 V –1.2 V 2 –1.5 V –1.8 V 1 –2.1 V –1.2 V –1.4 V 0 0 4 8 12 16 –2.4 V 0 20 0 VDS – Drain-Source Voltage (V) 4 8 12 16 20 VDS – Drain-Source Voltage (V) Output Characteristics Output Characteristics 2 2.5 VGS(off) = –2 V VGS = 0 V VGS(off) = –3 V –0.2 V –0.4 V 1.2 –0.6 V –0.8 V 0.8 –1.0 V –1.2 V 0.4 2.0 ID – Drain Current (mA) VGS = 0 V 1.6 ID – Drain Current (mA) 50 –0.6 V –0.9 V 1.5 –1.2 V –1.5 V 1.0 –1.8 V –2.1 V 0.5 –1.4 V 0 0.2 0.4 0.6 VDS – Drain-Source Voltage (V) Document Number: 70253 S-04031—Rev. C, 04-Jun-01 0.8 –2.4 V 0 –1.6 V 0 –0.3 V 1 0 0.2 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) www.vishay.com 8-3 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 5 100 VGS(off) = –2 V VDG = 15 V TA = 25_C VDS = 10 V (mV) TA = –55_C 3 VGS1 – VGS2 ID – Drain Current (mA) 4 25_C 2 2N5545 125_C 1 0 1 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.01 1 ID – Drain Current (mA) Voltage Differential with Temperature vs. Drain Current Common Mode Rejection Ratio vs. Drain Current 130 VDG = 15 V DTA = 25 to 125_C DTA = –55 to 25_C ( m V/ _C ) 0.1 VGS – Gate-Source Voltage (V) 100 DVDG CMRR = 20 log D V GS1 – VGS2 120 CMRR (dB) 2N5547 Dt 10 2N5545 110 DVDG = 10 – 20 V 100 5 – 10 V D VGS1 – VGS2 2N5547 10 90 80 1 0.01 0.1 1 0.01 ID – Drain Current (mA) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current rDS(on) – Drain-Source On-Resistance ( Ω ) 1k AV – Voltage Gain 80 60 VGS(off) = –3 V VGS(off) = –2 V 40 AV + g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V RL + 0 0.01 10 V ID 8-4 800 600 VGS(off) = –2 V 400 VGS(off) = –3 V 200 0 0.1 ID – Drain Current (mA) www.vishay.com 1 ID – Drain Current (mA) 100 20 0.1 1 0.01 0.1 1 ID – Drain Current (mA) Document Number: 70253 S-04031—Rev. C, 04-Jun-01 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss – Reverse Feedback Capacitance (pF) C iss – Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 5V 2 15 V f = 1 MHz 4 VDS = 0 V 3 5V 2 1 15 V 0 0 0 –4 –8 –12 –16 0 –20 –4 Equivalent Input Noise Voltage vs. Frequency VGS(off) = –2 V –20 VDS = 15 V f = 1 kHz 2.0 16 gos – Output Conductance (µS) Hz –16 2.5 VDS = 10 V en – Noise Voltage nV / –12 Output Conductance vs. Drain Current 20 ID @ 200 mA 12 8 VGS = 0 V 4 0 10 100 1k 10 k 1.5 TA = –55_C 1.0 25_C 0.5 125_C 0 0.01 100 k 0.1 1 f – Frequency (Hz) ID – Drain Current (mA) Common-Source Forward Transconductance vs. Drain Current On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 1k 2.5 VDS = 15 V f = 1 kHz 2.0 TA = –55_C 1.5 25_C 1.0 0.5 125_C gos 800 8 6 600 400 4 rDS 2 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz 0 0 0 0.01 0.1 ID – Drain Current (mA) Document Number: 70253 S-04031—Rev. C, 04-Jun-01 1 g os– Output Conductance ( mS) rDS(on) – Drain-Source On-Resistance ( Ω ) VGS(off) = –2 V gfs – Forward Transconductance (mS) –8 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) 0 –1 –2 –3 –4 –5 VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com 8-5