RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 MAPL-000817-015CPC Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 17.0dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz • MAPL-000817-015CPC Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS +20, -20 Vdc Total Power Dissipation @ TC = 25 °C PD 31.25 W Storage Temperature TSTG -65 to +150 °C Junction Temperature TJ 150 °C Symbol Max Unit RΘJC 4 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) VDS(Q) 3 — 5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) VDS(on) — 0.25 — Vdc Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) GP — 17 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) IRL — -10 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) GP — 13.0 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) IRL — -10 — dB DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) (1) Device specifications obtained on a Production Test Fixture. 2 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary C1,C11 Tantalum Surface Mt. Cap., 100 µF, 35 V C2,C12 Ceramic Chip Capacitor, 0.1 µF C3,C13 Ceramic Chip Capacitor, 1000 pF C4,C6,C14,C17 Chip Capacitor, 39 pF ATC100A C5 Chip Capacitor, 1.8 pF ATC100A C7,C8 Chip Capacitor, 1.0 pF ATC100A C9,C10 Chip Capacitor, 2.7 pF ATC100A C15 Chip Capacitor, 3.0 pF ATC100A C16 Chip Capacitor, 3.3 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 72 nH, CoilCraft 0603 L2 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015CPC R1 Chip Resistor (0805), 10k Ohm R2 Chip Resistor (0805), 10 Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Distributed Microstrip Element, 0.034” x 0.046” Distributed Microstrip Element, 0.092” x 0.046” Distributed Microstrip Element, 0.532” x 0.046” Distributed Microstrip Element, 0.080” x 0.026” Distributed Microstrip Element, 0.028” x 0.178” Distributed Microstrip Element, 0.216” x 0.178” Distributed Microstrip Element, 0.029” x 0.178” Distributed Microstrip Element, 0.077” x 0.178” Distributed Microstrip Element, 0.211” x 0.178” Distributed Microstrip Element, 0.029” x 0.178” Distributed Microstrip Element, 0.945” x 0.046” Distributed Microstrip Element, 0.125” x 0.046” PC Board Rogers (RO4350) Duroid, 0.020:” thick, Er=3.5, 1 Oz Copper Both Sides Figure 1. 1620-1670 MHz Test Fixture Schematic Figure 2. 1620—1670 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary 20 20 60 60 55 55 CW, , IIDQ=150mA CW,26V 26VDC =150mA DC, DQ 16 16 50 50 14 14 45 45 12 12 40 40 10 10 35 35 88 30 30 66 Gain Gain1670MHz 1670MHz Gain Gain1620MHz 1620MHz 44 Eff Eff 1670MHz 1670MHz Eff Eff 1620MHz 1620MHz 22 00 25 25 DrainEfficiency Efficiency (%) (%) Drain Gain(dB) (dB) Gain 18 18 20 20 15 15 10 10 55 77 99 11 11 Pout Pout (W) (W) 13 13 15 15 17 17 Graph 1. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power 24 24 70 70 60 60 20 20 50 50 18 18 40 40 16 16 Gain Gain (920MHz) (920MHz) Gain (940MHz) Gain (940MHz) 14 14 12 12 10 10 30 30 31 31 32 32 33 33 34 34 35 35 36 36 37 37 38 38 39 39 40 40 30 30 Gain Gain (960MHz) (960MHz) Eff Eff(920MHz) (920MHz) 20 20 Eff Eff(940MHz) (940MHz) Eff Eff(960MHz) (960MHz) 10 10 41 41 42 42 Drain Efficiency Efficiency (%) (%) Drain Gain (dB) (dB) Gain CW, , IIDQ=150mA CW, 26V 26VDC =150mA DC , DQ 22 22 00 43 43 Pout Pout (dBm) (dBm) Graph 2. 920, 940, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power 4 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020