VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. S S G FEATURES • Improved Ruggedness V(BR)DSS = 170V • Nitride Passivated • 600W with 21dB Typical Gain @ 30MHz, 50V • Economical Flangeless Package • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • High Voltage Replacement for MRF157 • Available in Matched Pairs • RoHS Compliant Maximum Ratings Symbol VDSS All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage ID VRF157FL(MP) Unit 170 V Continuous Drain Current @ TC = 25°C 60 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 1350 W TSTG Storage Temperature Range TJ -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) 3.0 Max 5.0 4.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 20A) 16 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.13 °C/W 4.0 mA μA mhos Thermal Characteristics RθJC RθJHS Characteristic Junction to Case Thermal Resistance Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.22 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4940 Rev F 9-2010 Symbol Dynamic Characteristics Symbol VRF157FL(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 1580 Coss Output Capacitance VDS = 50V 810 Crss Reverse Transfer Capacitance f = 1MHz 65 Max Unit pF Functional Characteristics Symbol Parameter GPS f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W ηD f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP IMD(d3) Min Typ 17 21 dB 45 % -25 dBc 1 Max 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 100 45 5.5V 40 80 30 ID, DRAIN CURRENT (A) 35 4.5V 25 20 3.5V 15 10 2.5V 5 1.5V .5V 0 0 V 2 4 6 8 TJ= -55°C 70 TJ= 25°C 60 50 40 30 20 TJ= 125°C 10 0 10 0 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics Coss 1.0E−10 Crss 25 50 75 IDMax ID, DRAIN CURRENT (V) C, CAPACITANCE (F) 1.0E−9 050-4940 Rev F 9-2010 6 8 100 Ciss 0.1 4 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics DS(ON) 1.0E−8 1.0E−11 2 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage BVdss Line ID, DRAIN CURRENT (A) 250μs PULSE TEST<0.5 % DUTY CYCLE 90 10 Rds(on) PD Max 1 TJ = 125°C TC = 75°C 1 10 100 180 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area 10 Unit Typical Performance Curves VRF157FL(MP) D = 0.9 0.12 0.10 0.7 0.08 0.5 Note: 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 t1 = Pulse Duration 0.02 t 0.1 0.05 0 10 SINGLE PULSE 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC -4 10 0.1 10-2 -3 1 10 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1200 1200 Freq=30MHz Freq=65MHz 50V 1000 OUTPUT POWER (WPEP) 40V 800 600 400 800 40V 600 400 200 200 0 5 10 15 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 20 0 0 10 20 30 40 50 60 70 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 80 050-4940 Rev F 9-2010 OUTPUT POWER (WPEP) 1000 0 50V VRF157FL(MP) 30MHz Test Circuit Figure 8. Vbias 50V R1 L6 L3 C12 R2 C10 C14 C11 C15 C1 R3 L2 C2 C9 C13 L4 L1 C16 Output L5 C4 C6 C5 C7 C8 C3 RF Input C1, C2, C6, C7 ARCO 465 mica trimmer C3 1800pF ATC700B ceramic C4 680pF metal clad 500V mica C5 390pF metal clad 500V mica C8 100pF ATC 700E ceramic C9 120pF ATC 700E ceramic C10 - C13 .01uF 100V ceramic SMT C14 - C16 .1uF 100V ceramic SMT Figure 9. 2-50MHz L1 110nH 4t #22 0.312"d .30"l L2 29nH 2t #22 .188" dia .10" l L3 0.3uH - 6t #16 enam. .5" dia. L4 22nH - 1t #16 enam. .375" dia. L5 117nH - 3t #16 enam. .5" dia. .3"l L6 1t #16 on 2x 267300081 .5" bead R1-R2 1kW 1/4W R3 10W 1/4W + 1kW Wideband Amplifier C13 50V - D.U.T. R10 D2 R14 R1 OUTPUT C3 R12 C7 R14 L1 22pF C10 C9 C14 C11 L2 T1 C12 R15 C8 D3 BIAS 36-50V + R11 C4 R5 R4 D.U.T. 3 2 4 R7 11 5 13 7 C1 6 R3 R8 C2 050-4940 Rev F 9-2010 R13 R6 10 12 D1 T2 R2 R9 C1 - 1000pF Ceramic C2, C3, C4 -0.1μF Ceramic Disc Capacitor C5 - 0.01μF Ceramic Chip Capacitor C6, C12 - 0.1μF Ceramic Chip Capacitor C7, C8 - Two 2200 pF Ceramic Chip Capacitors in Parallel C9 - 820pF Ceramic Chip Capacitor C10, C1 1 - 1000pF Ceramic Chip Capacitor C13 - 0.47μF Ceramic Chip Capacitor or Two Smaller Values in Parallel C14 - Unencapsulated Mica, 500V Two 1000pF Units in Series, Mounted Under T2 D1 - IN5357A or Equivalent D2, D3 - IN4148 or Equivalent C1 - MC1723 (723) Voltage Regulator L1, L2 - 15 ηH Connecting Wires to R14 and R15, 2.5cm Each #20 AWG L3 - 10μH, 10 Turns #12 AWG Enameled Wire on Fair-Rite Products Corp. Ferrite Toroid #5961000401 or Equivalent R1, R2 - 1.0K Single Turn Trimpots R3 - 10K Single Turn Trimpot R4 - 470 Ohms, 2.0 Watts R5 - 10 Ohms R6, R12, R13 - 2.0K Ohms R7 - 10K Ohms R8 - Exact Value Depends on Thermistor R9 used (Typically 5.0 - 10K) R9 - Thermistor, Keystone RL1009-5820-97-D1 or Equivalent R10, R11 - 100 Ohms, 1.0W Carbon R14, R15 - EMC Technology Model 5308 or KDI Pyrofilm PPR 970-150-3 Power Resistors, 25 Ohms T1, T2 - 9:1 and 1:9 Impedance Ratio RF Transformers VRF157FL(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. Thermal Considerations Mounting: and Package The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.13°C/W. When installed, an additional thermal impedance of 0.09°C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The lid maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. Four 6-32 (M3.5) screws provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." D .466 .250 G .500 .150r S .750 .250 1.000 1 .125d .500 2 3 1.250 HAZARDOUS MATERIAL WARNING 1.500 4 050-4940 Rev F 9-2010 .300 The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. .200 .005 .040 PIN 1 - DRAIN PIN 2 - SOURCE PIN 3 - SOURCE PIN 4 - GATE Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.