AP4502GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
20V
18mΩ
ID
▼ RoHS Compliant & Halogen-Free
S1
SO-8
S2
G1
G2
8.3A
P-CH BVDSS
-20V
RDS(ON)
45mΩ
ID
Description
AP4502 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
-5A
D1
D2
G2
G1
S1
S2
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
+12
+12
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
8.3
-5
A
ID@TA=70℃
3
6.5
-4
A
30
-20
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201501056
AP4502GM-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
20
-
-
V
VGS=10V, ID=9A
-
-
16
mΩ
VGS=4.5V, ID=8.3A
-
-
18
mΩ
VGS=2.5V, ID=5.2A
-
-
30
mΩ
0.5
-
-
V
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=8.3A
-
8.3
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=8A
-
22
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
11
-
ns
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
30
-
ns
tf
Fall Time
VGS=5V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1350
-
pF
Coss
Output Capacitance
VDS=20V
-
325
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
255
-
pF
Min.
Typ.
IS=1.8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
24
-
nC
2
AP4502GM-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-20
-
-
V
VGS=-10V, ID=-6A
-
-
40
mΩ
VGS=-4.5V, ID=-5A
-
-
45
mΩ
VGS=-2.5V, ID=-4A
-
-
80
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-
V
gfs
Forward Transconductance
VDS=-10V, ID=-2.2A
-
2.2
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=-5A
-
13
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-10V
-
8
-
ns
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=-5V
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
920
-
pF
Coss
Output Capacitance
VDS=-20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
Max.
30
IS=-1.8A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4502GM-HF
N-Channel
30
30
5.0V
4.5V
3.5V
2.5V
20
V G = 2.0 V
10
20
V G =2.0V
10
0
0
0
1
2
0
3
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I D = 5.2A
I D =8.3A
V G =10V
T A = 25 o C
Normalized R DS(ON)
30
RDS(ON0 (mΩ)
5.0V
4.5V
3.5V
2.5V
T A =150 ℃
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
26
22
18
1.4
1.0
30
14
10
-30
0.6
1
2
3
4
5
-50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
1.6
Normalized VGS(th)
10
6
IS(A)
50
o
V GS , Gate-to-Source Voltage (V)
T j =150 o C
0
T j =25 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4502GM-HF
N-Channel
f=1.0MHz
12
10000
I D= 8 A
V DS = 10 V
C iss
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
50
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
10
100us
ID (A)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4502GM-HF
P-Channel
20
20
T A = 150 o C
- 5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
V G = - 1.5 V
T A =25 o C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
16
-5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
12
8
4
12
V G = - 1.5 V
8
4
0
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
60
I D = -5.7 A
I D = -5.7 A
V G = - 10V
T A =25 o C
56
Normalized R DS(ON)
RDS(ON) (mΩ)
1.2
52
48
1.0
0.8
44
30
-30
0.6
40
1
2
3
4
-50
5
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.2
Normalized VGS(th)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4502GM-HF
P-Channel
f=1.0MHz
10000
9
I D = -5A
V DS = -16V
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
3
10
0
0.0
5.0
10.0
15.0
20.0
25.0
1
30.0
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
-ID (A)
10
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7
AP4502GM-HF
MARKING INFORMATION
Part Number
4502GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8