AP2535GEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Capable of 1.8V Gate Drive
N-CH BVDSS
S1
▼ Lower Gate Charge
RDS(ON)
D1
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S2
SOT-26
20V
32mΩ
ID
G2
4.6A
P-CH BVDSS
G1
Description
AP2535 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for commercial surface mount
applications.
-20V
RDS(ON)
80mΩ
ID
-3.1A
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
+8
+8
V
3
4.6
-3.1
A
3
3.7
-2.5
A
12
-12
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
1.13
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
110
℃/W
1
201206281
AP2535GEY-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=3A
-
-
32
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
VGS=1.8V, ID=1A
-
-
50
mΩ
0.25
-
1
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=3A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=3A
-
9
14.4
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=5V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=10V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.4
4.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
2
AP2535GEY-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-2A
-
-
80
mΩ
VGS=-2.5V, ID=-1.5A
-
-
100
mΩ
VGS=-1.8V, ID=-1A
-
-
160
mΩ
-0.25
-
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
8.5
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-2A
-
8
12.8
nC
Qgs
Gate-Source Charge
VDS=-10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
7
-
ns
tr
Rise Time
ID=-1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=-5V
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
640
1024
pF
Coss
Output Capacitance
VDS=-10V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
16
Ω
Source-Drain Diode
Min.
Typ.
VSD
Symbol
Forward On Voltage2
Parameter
IS=-1A, VGS=0V
Test Conditions
-
-
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2535GEY-HF
N-Channel
12
12
5.0V
4.5V
3.5V
2.5V
V G = 1.8V
ID , Drain Current (A)
10
8
o
T A =150 C
10
ID , Drain Current (A)
o
T A =25 C
6
4
8
6
4
2
2
0
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I D =3A
V G =4.5V
I D = 2A
Normalized RDS(ON)
T A = 25 o C
RDS(ON0 (mΩ)
5.0V
4.5V
3.5V
2.5V
V G =1.8V
40
30
1.4
1.0
30
20
-30
0.6
0.5
1.5
2.5
3.5
4.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I D =1mA
1.6
T j =25 o C
o
T j =150 C
IS(A)
Normalized VGS(th)
3
2
1.2
0.8
1
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2535GEY-HF
N-Channel
ID=3A
V DS = 10 V
5
800
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
6
3
600
C iss
400
2
200
1
0
2
4
6
8
10
1
12
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
Operation in this area
limited by RDS(ON)
ID (A)
C oss
C rss
0
0
1ms
1
10ms
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
Rthja=180 oC/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
6
VG
ID , Drain Current (A)
5
QG
4
4.5V
3
QGS
QGD
2
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
5
AP2535GEY-HF
P-Channel
12
12
-5.0V
-4.5V
-3.5V
-2.5V
V G = - 1.8V
-ID , Drain Current (A)
10
8
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8V
o
T A = 150 C
10
-ID , Drain Current (A)
o
T A =25 C
6
4
2
8
6
4
2
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
I D = -2 A
V G = -4.5V
I D = -1 A
T A =25 o C
90
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
80
70
1.2
0.8
60
30
-30
0.4
50
0.5
1.5
2.5
3.5
-50
4.5
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I D = -1mA
1.6
T j =150 o C
Normalized -VGS(th)
-IS(A)
3
T j =25 o C
2
1.2
0.8
1
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2535GEY-HF
P-Channel
6
5
800
4
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
I D = -2A
V DS = -10V
3
600
C iss
400
2
200
1
0
C oss
C rss
0
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
30
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
0.01
Rthja=180 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
4
-ID , Drain Current (A)
VG
3
QG
-4.5V
2
QGS
QGD
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
7