VISHAY VS

16F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 16 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
RoHS
• Wide current range
COMPLIANT
• Types up to 1200 V VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• Battery charges
• Converters
PRODUCT SUMMARY
• Power supplies
IF(AV)
16 A
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
16
A
TC
140
°C
25
A
50 Hz
350
60 Hz
370
50 Hz
612
60 Hz
560
Range
100 to 1200
V
- 65 to 175
°C
IF(RMS)
IFSM
I2t
VRRM
UNITS
TJ
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE
VOLTAGE
V (1)
10
100
150
-
20
200
275
-
40
400
500
500
60
600
725
750
80
800
950
950
100
1000
1200
1150
120
1200
1400
1350
16F(R)
IRRM MAXIMUM
AT TJ = 175 °C
mA
12
Note
(1) Avalanche version only available from V
RRM 400 V to 1200 V
Revision: 04-Apr-13
Document Number: 93491
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
16F(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current 
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak 
reverse power
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
UNITS
16
A
140
°C
25
A
10 μs square pulse, TJ = TJ maximum
15
K/W
t = 10 ms
350
180° conduction, half sine wave
IF(RMS)
PR(1)
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
370
295
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
A
310
612
560
435
A2s
395
t = 0.1 to 10 ms, no voltage reapplied
6120
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
0.90
A2s
V
Low level value of forward 
slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
7.80
High level value of forward 
slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
5.70
Ipk = 50 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.23
V
VALUES
UNITS
Maximum forward voltage drop
m
VFM
Note
(1) Available only for avalanche version, all other parameters the same as 16F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
SYMBOL
TEST CONDITIONS
TJ
- 65 to 175
Maximum storage temperature range
TStg
- 65 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.6
Maximum thermal resistance, 
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.5
K/W
Not lubricated threads
1.5 + 0 - 10 %
(13)
N·m
(lbf · in)
Lubricated threads
1.2 + 0 - 10 %
(10)
N·m
(lbf · in)
7
g
0.25
oz.
Allowable mounting torque
Approximate weight
Case style
Revision: 04-Apr-13
°C
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
Document Number: 93491
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
16F(R) Series
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Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.31
0.23
120°
0.38
0.40
90°
0.49
0.54
60°
0.72
0.75
30°
1.20
1.21
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
180
16F(R) Series
RthJC (DC) = 1.6 K/W
170
160
Conduction Angle
150
90°
140
60°
120°
30°
180°
130
0
4
8
12
16
180
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
16F(R) Series
RthJC (DC) = 1.6 K/W
170
160
Conduction Period
150
90°
60° 120°
140
30°
180°
DC
130
20
0
5
10
15
20
25
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
30
20
R
180°
120°
90°
60°
30°
16
6K
/W
th
SA
=
8K
/W
12
4K
/W
-D
elt
aR
10 K
/W
RMS Limit
15 K/W
8
20 K/W
Conduction Angle
30 K/W
4
16F(R) Series
TJ = 175°C
0
0
4
8
12
16
Average Forward Current (A)
20
0
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Revision: 04-Apr-13
Document Number: 93491
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
16F(R) Series
Maximum Average Forward Power Loss (W)
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Vishay Semiconductors
25
DC
180°
120°
90°
60°
30°
20
15
R
th
SA
=
6K
/W
RMS Limit
4K
/W
8K
/W
-D
elt
aR
10 K
/W
15 K/W
10
20 K/W
Conduction Period
30 K/W
5
16F(R) Series
TJ = 175°C
0
0
5
10
15
20
25
Average Forward Current (A)
30
0
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
325
1000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
300
275
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
250
225
200
175
16F(R) Series
150
TJ = 25°C
TJ = 175°C
100
10
16F(R) Series
1
125
1
10
0
100
2
3
4
5
6
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
350
10
325
300
275
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 175°C
No Voltage Reapplied
Rated VRRM Reapplied
250
225
200
175
150
16F(R) Series
125
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 04-Apr-13
Transient Thermal Impedance ZthJC (K/W)
Peak Half Sine Wave Forward Current (A)
1
Steady State Value
RthJC = 1.6 K/W
(DC Operation)
1
16F(R) Series
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 93491
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
16F(R) Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
16
F
R
120
M
1
2
3
4
5
1
-
Current rating: Code = IF(AV)
2
-
F = Standard device
3
-
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 04-Apr-13
www.vishay.com/doc?95311
Document Number: 93491
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
+ 0.3
0
+ 0.01
(0.08
0)
0.8 ± 0.1
(0.03 ± 0.004)
3.30 (0.13)
4.00 (0.16)
2
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: [email protected]
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1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000