VISHAY 60EPS16PBF

VS-60EPS16PbF
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Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
FEATURES
Base
cathode
• Designed
and
JEDEC-JESD47
2
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-247AC modified
1
Cathode
• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines.
3
Anode
PRODUCT SUMMARY
Package
TO-247AC modified
IF(AV)
60 A
VR
1600 V
VF at IF
1.07 V
DESCRIPTION
The VS-60EPS16PbF rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
IFSM
950 A
TJ max.
150 °C
Diode variation
Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
60
A
VRRM
1600
V
IFSM
950
A
1.07
V
- 40 to 150
°C
VF
60 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM AT 150 °C
mA
VS-60EPS16PbF
1600
1700
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 118 °C, 180° conduction half sine wave
60
10 ms sine pulse, rated VRRM applied
950
10 ms sine pulse, no voltage reapplied
1100
10 ms sine pulse, rated VRRM applied
4512
10 ms sine pulse, no voltage reapplied
6300
t = 0.1 to 10 ms, no voltage reapplied
63 000
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Revision: 18-Aug-11
VALUES
UNITS
A
A2s
A2s
Document Number: 94346
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VS-60EPS16PbF
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
30 A, TJ = 25 °C
1.0
60 A, TJ = 25 °C
1.07
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
UNITS
V
3.96
m
0.74
V
0.1
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
Revision: 18-Aug-11
UNITS
- 40 to 150
°C
0.35
40
Mounting surface, smooth and greased
°C/W
0.2
6
Approximate weight
Mounting torque
VALUES
g
0.21
oz.
minimum
6.0 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Case style TO-247AC modified (JEDEC)
60EPS16
Document Number: 94346
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-60EPS16PbF
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Vishay Semiconductors
110
60EPS.. Series
RthJC (DC) = 0.35 K/W
140
Ø
Conduction angle
130
120
90°
110
60°
120°
30°
180°
90
80
70
60
RMS limit
50
Ø
40
Conduction period
30
20
60EPS.. Series
TJ = 150 °C
10
100
0
0
10
20
30
40
60
50
70
0
20
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
1000
150
60EPS.. Series
RthJC (DC) = 0.35 K/W
140
Ø
Conduction period
130
30°
60°
90°
120
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
900
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
DC
180°
120°
90°
60°
30°
100
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
120°
180°
800
700
600
500
60EPS.. Series
400
DC
300
110
0
20
60
1
100
80
10
100
Average Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
90
1200
180°
120°
90°
60°
30°
80
70
60
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
40
RMS limit
50
40
Ø
30
Conduction angle
20
60EPS.. Series
TJ = 150 °C
10
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1000
800
600
400
60EPS.. Series
200
0
0
10
20
30
40
50
60
70
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
Document Number: 94346
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPS16PbF
Instantaneous Forward Current (A)
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Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
60EPS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (°C/W)
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
60EPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 1 - Thermal Impedance ZthJC Characteristics
Revision: 18-Aug-11
Document Number: 94346
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPS16PbF
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
S
16
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = Single diode
4
-
Package:
P = TO-247AC modified
5
-
Type of silicon:
S = Standard recovery rectifier
6
-
Voltage rating (16 = 1600 V)
7
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95253
Part marking information
www.vishay.com/doc?95255
Revision: 18-Aug-11
Document Number: 94346
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) ΦP
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
ΦP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
Planting
View A - A
C
2x e
A1
b4
0.10 M C A M
(4)
E1
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
K
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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