ONSEMI NVF3055L108T1G

NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
http://onsemi.com
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
3.0 A, 60 V
RDS(on) = 120 mW
Features
• AEC Q101 Qualified − NVF3055L108
• These Devices are Pb−Free and are RoHS Compliant
N−Channel
D
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
VGS
± 15
± 20
Vdc
Vpk
ID
ID
3.0
1.4
9.0
Apk
PD
2.1
1.3
0.014
Watts
Watts
W/°C
TJ, Tstg
−55
to 175
°C
EAS
74
mJ
RqJA
RqJA
72.3
114
TL
260
October, 2011 − Rev. 6
1
2
SOT−223
CASE 318E
STYLE 3
3
MARKING DIAGRAM
Adc
IDM
AYW
3055L = Device Code
3055LG
A
= Assembly Location
G
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 0.0995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 in2).
© Semiconductor Components Industries, LLC, 2011
4
1
1
Gate
2
3
Drain
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTF3055L108/D
NTF3055L108, NVF3055L108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
−
68
68
−
−
−
−
−
−
1.0
10
−
−
± 100
1.0
−
1.68
4.6
2.0
−
−
92
120
−
0.290
0.250
0.43
−
gfs
−
5.7
−
Mhos
Ciss
−
313
440
pF
Coss
−
112
160
Crss
−
40
60
td(on)
−
11
25
tr
−
35
70
td(off)
−
22
45
tf
−
27
60
QT
−
7.6
15
Q1
−
1.4
−
Q2
−
4.0
−
−
−
0.87
0.72
1.0
−
trr
−
35
−
ta
−
21
−
tb
−
14
−
QRR
−
0.044
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current
IGSS
(VGS = ± 15 Vdc, VDS = 0 Vdc)
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.5 Adc)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 3.0 Adc)
(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3)
(VDS = 7.0 Vdc, ID = 3.0 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
VSD
Vdc
ns
mC
NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
5
VDS > = 10 V
VGS = 3.5 V
VGS = 4.5 V
4
3
VGS = 6 V
2
VGS = 10 V
VGS = 3.2 V
VGS = 3 V
VGS = 2.8 V
1
0
6
VGS = 3.4 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
6
VGS = 2.5 V
0.5
0
1.5
1
2
2.5
5
4
3
TJ = 100°C
2
TJ = 25°C
1
TJ = −55°C
0
3
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ = 100°C
0.14
0.12
TJ = 25°C
0.1
0.08
TJ = −55°C
0.06
0.04
0.02
0
2
1
3
4
5
6
ID, DRAIN CURRENT (AMPS)
0.16
3.5
4
4.5
5
0.14
TJ = 100°C
0.12
0.1
TJ = 25°C
0.08
0.06
TJ = −55°C
0.04
0.02
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
VGS = 0 V
ID = 1.5 A
VGS = 5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
3
VGS = 10 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
2.5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 5 V
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.16
1.5
1.6
1.4
1.2
1
TJ = 150°C
1000
100
TJ = 100°C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
60
NTF3055L108, NVF3055L108
1000
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
Ciss
800
600
Crss
400
Ciss
Coss
200
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
6
QT
5
VGS
4
Q1
2
1
ID = 3 A
TJ = 25°C
0
0
1
IS, SOURCE CURRENT (AMPS)
tf
td(off)
td(on)
1
10
100
8
VGS = 0 V
TJ = 25°C
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0.54
0.58
0.62 0.66
0.7
0.74 0.78 0.82 0.86 0.9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 ms
ID, DRAIN CURRENT (AMPS)
7
6
RG, GATE RESISTANCE (W)
10
10 ms
1
1 ms
0.1
0.001
0.1
5
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
tr
0.01
4
3.2
100
1
3
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS = 30 V
ID = 3 A
VGS = 5 V
10
2
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
Q2
3
1000
100
80
ID = 7 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTF3055L108, NVF3055L108
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NVF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
Device
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTF3055L108, NVF3055L108
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTF3055L108/D