NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 45 AMPERES, 60 VOLTS RDS(on) = 28 m Features • • • • • • • • • Pb−Free Packages are Available Higher Current Rating Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specification Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge N−Channel D G S MARKING DIAGRAMS Typical Applications • • • • 4 Drain Power Supplies Converters Power Motor Controls Bridge Circuits 4 TO−220 CASE 221A STYLE 5 1 2 NTx45N06L AYWW 1 Gate 3 3 Source 2 Drain 4 Drain 4 2 1 D2PAK CASE 418B STYLE 2 NTx45N06L AYWW 3 2 1 3 Drain Gate Source NTx45N06L x A Y WW = Device Code = P or B = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 1 1 Publication Order Number: NTP45N06L/D NTP45N06L, NTB45N06L MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 M) VDGR 60 Vdc VGS VGS 15 20 ID ID 45 30 150 Adc PD 125 0.83 3.2 2.4 W W/°C W W TJ, Tstg −55 to +175 °C EAS 240 mJ RJC RJA RJA 1.2 46.8 63.2 TL 260 Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) IDM Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting T J = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 40 A, VDS = 60 Vdc, RG = 25 ) Apk °C/W Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). ORDERING INFORMATION Package Shipping† NTP45N06L TO−220 50 Units/Rail NTB45N06L D2PAK 50 Units/Rail NTB45N06LG D2PAK (Pb−Free) 50 Units/Rail NTB45N06LT4 D2PAK 800 Tape & Reel D2PAK (Pb−Free) 800 Tape & Reel Device NTB45N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTP45N06L, NTB45N06L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 60 − 67 67.2 − − − − − − 1.0 10 − − ±100 1.0 − 1.8 4.7 2.0 − − 23 28 − − 1.03 0.93 1.51 − gFS − 22.8 − mhos Ciss − 1212 1700 pF Coss − 352 480 Crss − 90 180 td(on) − 13 30 OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 22.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 4) (VGS = 5.0 Vdc, ID = 45 Adc) (VGS = 5.0 Vdc, ID = 22.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 4) (VDS = 8.0 Vdc, ID = 12 Adc) Vdc mV/°C m Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 45 Adc, VGS = 5.0 Vdc, RG = 9.1 ) (Note 4) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 45 Adc, Ad VGS = 5.0 Vdc) (Note 4) ns tr − 341 680 td(off) − 36 75 tf − 158 320 QT − 23 32 Q1 − 4.6 − Q2 − 14.1 − VSD − − 1.01 0.92 1.15 − Vdc trr − 56 − ns ta − 30 − tb − 26 − QRR − 0.09 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 45 Adc, VGS = 0 Vdc) (Note 4) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 45 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/s) (Note 4) Reverse Recovery Stored Charge 3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 in2). C NTP45N06L, NTB45N06L 80 ID, DRAIN CURRENT (AMPS) 70 ID, DRAIN CURRENT (AMPS) 80 VGS = 5.5 V VGS = 10 V VGS = 5 V 60 VGS = 6 V 50 VGS = 7 V VGS = 4.5 V 40 VGS = 4 V 30 VGS = 8 V 20 VGS = 3.5 V VGS = 9 V 10 VDS > = 10 V 70 60 50 40 30 TJ = 25°C 20 TJ = 100°C 10 TJ = −55°C 0 1 3 2 0 1.8 4 TJ = 25°C 0.03 0.026 0.022 TJ = −55°C 0.018 10 20 30 40 50 60 70 80 RDS(on), DRAIN−TO−SOURCE RESISTANCE () TJ = 100°C 0.034 5.8 0.046 0.042 0.038 0.034 VGS = 5 V 0.03 0.026 VGS = 10 V 0.022 0.018 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 ID = 22.5 A VGS = 5 V VGS = 0 V IDSS, LEAKAGE (nA) 1.8 5 Figure 2. Transfer Characteristics 0.038 2 4.2 Figure 1. On−Region Characteristics 0.042 0 3.4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 5 V 0.014 2.6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.046 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 1.6 1.4 1.2 1 TJ = 150°C 1000 TJ = 125°C 100 TJ = 100°C 0.8 0.6 −50 −25 10 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 60 4000 TJ = 25°C Ciss 3200 Crss 2800 2400 2000 Ciss 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 15 10 20 25 Q1 Q2 4 3 2 1 ID = 45 A TJ = 25°C 0 0 4 8 12 16 20 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tr 100 td(off) 1 10 100 32 24 16 8 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current dc 10 10 ms 1 ms RDS(on) Limit Thermal Limit Package Limit 1 100 s 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VGS = 15 V SINGLE PULSE TC = 25°C 0.1 0.10 VGS = 0 V TJ = 25°C 40 RG, GATE RESISTANCE () 1000 1 24 48 VDS = 30 V ID = 45 A VGS = 5 V td(on) ID, DRAIN CURRENT (AMPS) VGS Figure 7. Capacitance Variation tf 100 QT 5 Qg, TOTAL GATE CHARGE (nC) 1000 10 6 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) C, CAPACITANCE (pF) 3600 t, TIME (ns) VGS = 0 V VDS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTP45N06L, NTB45N06L 280 ID = 45 A 240 200 160 120 80 40 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTP45N06L, NTB45N06L 1 EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Normalized to RJC at Steady State r(t), 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 Normalized to RJA at Steady State, 1″ square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.1 0.01 1 t, TIME (s) Figure 14. Thermal Response http://onsemi.com 6 10 100 1000 NTP45N06L, NTB45N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 7 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 NTP45N06L, NTB45N06L PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 3 S −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) H M T B M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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