NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 75 AMPERES, 60 VOLTS RDS(on) = 9.5 m Features • Pb−Free Packages are Available N−Channel D Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 M) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C VGS VGS 4 ID ID IDM PD 20 30 75 50 225 Adc 214 1.4 2.4 W W/°C W TO−220 CASE 221A STYLE 5 −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 75 A, VDS = 60 Vdc) EAS 844 mJ 1 2 1 Gate 3 °C/W 0.7 62.5 TL 260 4 Drain 2 3 D2PAK CASE 418B STYLE 2 75N06 AYWW 2 1 3 Drain Gate Source °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 Source 2 Drain 4 RJC RJA 75N06 AYWW Apk TJ, Tstg Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 4 Drain Vdc Operating and Storage Temperature Range Thermal Resistance − Junction−to−Case − Junction−to−Ambient MARKING DIAGRAMS 75N06 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 2 1 Publication Order Number: NTP75N06/D NTP75N06, NTB75N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 60 − 71 73 − − − − − − 10 100 − − ±100 2.0 − 2.8 8.0 4.0 − − 8.2 9.5 − − 0.72 0.63 0.86 − gFS − 40.2 − mhos Ciss − 3220 4510 pF Coss − 1020 1430 Crss − 234 330 td(on) − 16 25 OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 1) (VGS = 10 Vdc, ID = 37.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 1) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc) Vdc mV/°C m Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 75 Adc, VGS = 10 Vdc, RG = 9.1 ) (Note 1) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 75 Adc, Ad VGS = 10 Vdc) (Note 1) ns tr − 112 155 td(off) − 90 125 tf − 100 140 QT − 92 130 Q1 − 14 − Q2 − 44 − VSD − − 1.0 0.9 1.1 − Vdc trr − 77 − ns ta − 49 − tb − 28 − QRR − 0.16 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (Note 1) (IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 75 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/s) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTP75N06, NTB75N06 160 VGS = 10 V 140 VGS = 6.5 V 120 VGS = 7 V 100 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 160 VGS = 6 V VGS = 8 V 80 VGS = 5.5 V VGS = 9 V 60 40 VGS = 5 V 20 VGS = 4.5 V 2 3 4 80 60 40 TJ = 25°C 20 TJ = 100°C 3.5 3 TJ = −55°C 4 4.5 5 5.5 6 6.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 100°C 0.013 0.011 TJ = 25°C 0.009 RDS(on), DRAIN−TO−SOURCE RESISTANCE () VGS, GATE−TO−SOURCE VOLTAGE (V) 0.015 7 0.015 VGS = 15 V 0.013 TJ = 100°C 0.011 0.009 TJ = 25°C 0.007 0.007 TJ = −55°C 0.005 TJ = −55°C 0.005 0.003 0.003 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 2 1.8 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 37.5 A VGS = 10 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1 120 0 2.5 0 0 VDS 10 V 140 1.4 1.2 1 TJ = 150°C 1000 TJ = 125°C TJ = 100°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 0 175 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 VGS, GATE−TO−SOURCE VOLTAGE (V) NTP75N06, NTB75N06 10000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 8000 Ciss 6000 Crss Ciss 4000 Coss 2000 Crss 0 10 VGS 0 VDS 5 5 10 15 20 25 VGS 8 Q1 Q2 6 4 2 0 ID = 75 A TJ = 25°C 0 tr td(off) 10 td(on) VDS = 30 V ID = 75 A VGS = 5 V 1 1 10 70 40 50 60 70 80 90 100 VGS = 0 V TJ = 25°C 60 50 40 30 20 10 0 0.6 100 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE () 1000 VGS = 20 V SINGLE PULSE TC = 25°C 10 s 100 100 s 1 ms 10 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 30 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tf 1000 20 Figure 7. Capacitance Variation 80 100 10 Qg, TOTAL GATE CHARGE (nC) IS, SOURCE CURRENT (AMPS) t, TIME (ns) QT 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V) 1000 ID, DRAIN CURRENT (AMPS) 12 1 10 100 ID = 75 A 800 600 400 200 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 1 175 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP75N06, NTB75N06 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) 1.0 10 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail NTB75N06 D2PAK 50 Units/Rail NTB75N06G D2PAK 50 Units/Rail Device NTP75N06 NTP75N06G (Pb−Free) NTB75N06T4 NTB75N06T4G D2PAK 800 Tape & Reel D2PAK (Pb−Free) 800 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTP75N06, NTB75N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 NTP75N06, NTB75N06 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) M T B M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN VARIABLE CONFIGURATION ZONE N R P U L L M L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTP75N06, NTB75N06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. NTP75N06/D