ONSEMI NTJD1155LT1G

NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
Level−Shift, P−Channel SC−88
The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
VIN and VON/OFF.
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ID MAX
130 mW @ −4.5 V
8.0 V
SIMPLIFIED SCHEMATIC
4
6
ON/OFF Voltage (VGS, N−Ch)
Continuous Load Current Steady
(Note 1)
State
TA = 25°C
Power Dissipation
(Note 1)
TA = 25°C
Steady
State
1
Symbol
Value
Unit
VIN
8.0
V
VON/OFF
8.0
V
IL
±1.3
A
PD
0.40
TA = 85°C
±0.9
TA = 85°C
Q1
5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Input Voltage (VDSS, P−Ch)
2,3
Q2
Extremely Low RDS(on) P−Channel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
These Devices are Pb−Free and are RoHS Compliant
Rating
±1.3 A
170 mW @ −2.5 V
260 mW @ −1.8 V
Features
•
•
•
•
•
•
RDS(on) TYP
V(BR)DSS
W
MARKING
DIAGRAM
SC−88
(SOT−363)
CASE 419B
STYLE 30
1
TB M G
G
TB = Device Code
M
= Date Code
1
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.20
ILM
±3.9
A
PIN ASSIGNMENT
TJ,
TSTG
−55 to
150
°C
D1/G2
6
Source Current (Body Diode)
IS
−0.4
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Load Current
tp = 10 ms
Operating Junction and Storage Temperature
1
S1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
320
°C/W
Junction−to−Foot – Steady State (Note 1)
RqJF
220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
1
G1
5
S2
4
2 3
D2 D2
ORDERING INFORMATION
Device
NTJD1155LT1G
Package
Shipping†
SC−88
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD1155L/D
NTJD1155L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Q2 Drain−to−Source Breakdown Voltage
VIN
VGS2 = 0 V, ID2 = 250 mA
−8.0
Forward Leakage Current
IFL
Typ
Max
Unit
OFF CHARACTERISTICS
VGS1 = 0 V,
VDS2 = −8.0 V
V
TJ = 25°C
1.0
TJ = 125°C
10
Q1 Gate−to−Source Leakage Current
IGSS
VDS1 = 0 V, VGS1 = ±8.0 V
Q1 Diode Forward On−Voltage
VSD
IS = −0.4 A, VGS1 = 0 V
mA
±100
nA
−1.1
V
1.5
8.0
V
−0.8
ON CHARACTERISTICS
ON/OFF Voltage
VON/OFF
Q1 Gate Threshold Voltage
VGS1(th)
VGS1 = VDS1, ID = 250 mA
0.4
1.0
V
VIN
VGS1 = VDS1, ID = 250 mA
1.8
8.0
V
mW
Input Voltage
Q2 Drain−to−Source On Resistance
RDS(on)
Load Current
VON/OFF = 1.5 V
IL
175
VIN = 2.5 V
IL = 1.0 A
170
220
VIN = 1.8 V
IL = 0.7 A
260
320
1.0
VDROP ≤ 0.3 V, VIN = 2.5 V,
VON/OFF = 1.5 V
1.0
2,3
Q2
R1
A
VOUT
C1
6
ON/OFF
130
VDROP ≤ 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
4
VIN
VIN = 4.5 V
IL = 1.2 A
6
5
CO
LOAD
Q1
1
CI
R2
R2
GND
Figure 1. Load Switch Application
Description
Components
Values
R1
Pullup Resistor
Typical 10 kW to 1.0 MW*
R2
Optional Slew−Rate Control
Typical 0 to 100 kW*
Output Capacitance
Usually < 1.0 mF
Optional In−Rush Current Control
Typical ≤ 1000 pF
CO, CI
C1
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.
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2
NTJD1155L
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
0.50
0.45
0.40
0.35
TJ = 125°C
VDROP (V)
VDROP (V)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
TJ = 125°C
0.30
0.25
0.20
TJ = 25°C
0.15
0.10
0.05
0.5
1.5
1.0
2.5
2.0
0
0
3.0
1.0
0.5
1.5
IL (AMPS)
0.8
IL = 1 A
VON/OFF = 1.5 to 8 V
0.6
0.5
0.4
0.3
0.2
TJ = 125°C
0.1
TJ = 25°C
0.0
1.0
2.0
3.0
4.0
5.0
VIN (VOLTS)
6.0
7.0
8.0
0.31
IL = 1 A
VON/OFF = 1.5 to 8 V
0.26
0.16
0.11
Vin = 5 V
0.06
0.01
−50
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
44
IL = 1 A
VON/OFF = 1.5 to 8 V
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
40
36
32
1.3
Vin = 5 V
1.1
Vin = 1.8 V
tr
28
24
td(off)
20
16
tf
12
0.9
0.7
−50
−25
Figure 5. On−Resistance Variation with
Temperature
TIME (ms)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
Vin = 1.8 V
0.21
Figure 4. On−Resistance vs. Input Voltage
1.7
3.0
Figure 3. Vdrop vs. IL @ Vin = 4.5 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Vdrop vs. IL @ Vin = 2.5 V
0.7
2.5
2.0
IL (AMPS)
8
−25
0
25
50
75
100
125
150
4
0
td(on)
0
TJ, JUNCTION TEMPERATURE (°C)
1
2
3
4
5
6
R2 (kW)
Figure 6. Normalized On−Resistance Variation
with Temperature
Figure 7. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
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3
7
8
NTJD1155L
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
40
22
20
18
32
28
tf
14
12
10
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
8
6
4
2
0
20
16
12
tr
1
2
3
4
5
4
7
6
td(on)
tf
8
td(on)
0
tr
24
TIME (ms)
TIME (ms)
16
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
36
td(off)
0
8
td(off)
1
0
2
3
4
5
6
8
7
R2 (kW)
R2 (kW)
Figure 8. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
Figure 9. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
12
tf
10
TIME (ms)
8
td(off)
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
6
4
tr
2
0
td(on)
0
1
2
3
5
4
7
6
8
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
R2 (kW)
Figure 10. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
10
Normalized to RqJA at Steady State ( 1 inch pad)
1
D = 0.5
0.2
P(pk)
0.1
0.1
0.01
SINGLE PULSE
0.01
0.001
0.02
0.05
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.1
1
10
SQUARE WAVE PULSE DURATION TIME t, (s)
Figure 11. FET Thermal Response
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4
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
100
1000
NTJD1155L
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTJD1155L/D