ONSEMI NTR4101P

NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
•
•
•
•
Leading −20 V Trench for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
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Applications
V(BR)DSS
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
RDS(ON) TYP
ID MAX
70 m @ −4.5 V
−20 V
−3.2 A
90 m @ −2.5 V
112 m @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Symbol
Value
Unit
VDSS
−20
V
VGS
±8.0
V
ID
−2.4
A
Steady
State
TA = 25°C
TA = 85°C
−1.7
t ≤ 10 s
TA = 25°C
−3.2
Steady
State
TA = 25°C
PD
Steady
State
Power Dissipation
(Note 2)
ESD Capability (Note 3)
W
1.25
TA = 25°C
ID
TA = 85°C
TA = 25°C
Pulsed Drain Current
G
D
t ≤ 10 s
Continuous Drain
Current (Note 2)
0.73
P−Channel MOSFET
S
−1.8
−1.3
PD
0.42
W
tp = 10 s
IDM
−7.5
A
C = 100 pF,
RS = 1500 ESD
225
V
Operating Junction and Storage Temperature
MARKING DIAGRAM &
PIN ASSIGNMENT
A
3
Drain
3
TR4
W
1
2
°C
TJ,
TSTG
−55 to
150
Source Current (Body Diode)
IS
−2.4
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SOT−23
CASE 318
STYLE 21
2
Source
1
Gate
TR4
W
= Device Code
= Work Week
ORDERING INFORMATION
Package
Shipping†
NTR4101PT1
SOT−23
3000/Tape & Reel
NTR4101PT1G
SOT−23
Pb−Free
3000/Tape & Reel
Device
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RJA
100
Junction−to−Ambient − Steady State (Note 2)
RJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
 Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTR4101P/D
NTR4101P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
V(BR)DSS
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 A)
V
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
IDSS
−1.0
A
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
IGSS
±100
nA
−0.720
−1.5
V
70
90
112
85
120
210
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 A)
VGS(th)
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
RDS(on)
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A)
−0.40
m
gFS
75
S
Ciss
675
pF
Coss
100
Crss
75
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
((VGS = 0 V,, f = 1 MHz,, VDS = −10 V))
Reverse Transfer Capacitance
Total Gate Charge
(VGS = −4.5 V, VDS = −10 V, ID = −1.6 A)
QG(tot)
7.5
Gate−to−Source Gate Charge
(VDS = −10 V, ID = −1.6 A)
QGS
1.2
nC
Gate−to−Drain “Miller” Charge
(VDS = −10 V, ID = −1.6 A)
QGD
2.2
nC
RG
6.5
td(on)
7.5
ns
tr
12.6
td(off)
30.2
tf
21.0
VSD
−0.82
−1.2
V
trr
12.8
15
ns
ta
9.9
ns
Discharge Time
tb
3.0
ns
Reverse Recovery Charge
Qrr
1008
nC
Gate Resistance
8.5
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = −4.5
4.5 V, VDS = −10
10 V,
ID = −1.6 A, RG = 6.0 )
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = −2.4 A)
Reverse Recovery Time
Charge Time
(VGS = 0 V,
V
dISD/dt = 100 A/s, IS = −1.6 A)
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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2
NTR4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
TJ = 25°C
VGS = −10 V − −2.4 V
−2.2 V
8
6
−2.0 V
4
−1.8 V
.
−1.6 V
2
0
25°C
8
125°C
7
6
5
4
3
2
1
VDS ≥ 20 V
0
0
2
1
3
5
4
6
7
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
1
2
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
TJ = −55°C
9
0.1
VGS = −5.0 V
0.09
T = 125°C
0.08
T = 25°C
0.07
0.06
T = −55°C
0.05
0.04
0.03
0.02
0.01
0
7
3
5
−ID, DRAIN CURRENT (AMPS)
1
9
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
6
TJ = 25°C
VGS = −2.5 V
VGS = −4.5 V
1
3
5
4
6
8
7
−ID, DRAIN CURRENT (AMPS)
2
9
10
Figure 4. On−Resistance vs. Drain Current and
Temperature
Figure 3. On−Resistance vs. Drain Current and
Temperature
100000
VGS = 0 V
ID = −1.6 A
10000
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
1000
TJ = 125°C
100
10
0.6
0.4
−50
TJ = 150°C
1.0
−25
0
25
50
75
100
125
150
0
TJ, JUNCTION TEMPERATURE (°C)
2
4
6
8
10
12
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
16
NTR4101P
1000
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
800
QT
3.5
Ciss
600
400
Coss
200
4.0
3.0
2.5
VDS
2.0
VGS
Qgd
Qgs
1.5
1.0
ID = −1.6 A
TJ = 25°C
0.5
Crss
0
0
2
4
6
8
10
12
14
16
18
20
0
0
4
6
2
Qg, TOTAL GATE CHARGE (nC)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
1000
5
−IS, SOURCE CURRENT (AMPS)
VDD = −10 V
ID = −1.6 A
VGS = −4.5 V
t, TIME (ns)
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
100
td(off)
tf
tr
td(on)
10
1
VGS = 0 V
TJ = 25°C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1
10
100
0
RG, GATE RESISTANCE (OHMS)
0.2
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4101P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
NTR4101P
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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6
For additional information, please contact your
local Sales Representative.
NTR4101P/D