MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) Small Compact Surface Mountable Package with J−Bend Leads Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Pb−Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Mechanical Characteristics SMB CASE 403A PLASTIC • Case: Epoxy, Molded • Weight: 100 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Cathode Polarity Band AYWW 1BL3G G 1BL3 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS130LT3 MBRS130LT3G Package Shipping† SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 8 1 Publication Order Number: MBRS130LT3/D MBRS130LT3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current TL = 120°C TL = 110°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A TJ −65 to +125 °C Symbol Value Unit Operating Junction Temperature A 1.0 2.0 THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Lead YJL Thermal Resistance, Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper) Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper) RqJA 12 228.8 71.3 °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 Value Unit V 0.395 0.445 mA 1.0 10 10 TJ = 100°C 1 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (V) IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRS130LT3 10 TJ = 100°C 1 25°C 0.1 0 0.1 100 10 TJ = 100°C 25°C 0.1 0.01 0.001 0.4 0.5 0.6 0.7 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 0 3 6 9 12 15 18 21 24 27 0 30 3 6 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) DC 1.6 1.4 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 100 105 110 115 120 12 15 18 21 24 27 30 Figure 4. Typical Maximum Reverse Leakage Curent 2 1.8 9 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Leakage Current IF(AV), AVERAGE FORWARD CURRENT (A) 0.3 Figure 2. Maximum Forward Voltage IR, IREVERSE CURRENT (mA) IR, IREVERSE CURRENT (mA) Figure 1. Typical Forward Voltage 1.0 0.2 VF, MAXIMUM INSTANTANEOUS VOLTAGE (V) 125 130 TC, CASE TEMPERATURE (°C) 0.9 0.8 0.7 0.6 0.5 SQUARE 0.4 0.3 DC 0.2 0.1 0 0 Figure 5. Current Derating (Case) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Typical Power Dissipation http://onsemi.com 3 MBRS130LT3 400 NOTE: TYPICAL CAPACITANCE AT 0 V = 290 pF C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 4 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Typical Capacitance 1000 100 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 100 1000 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Min Pad 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 9. Thermal Response, 1 Inch Pad http://onsemi.com 4 MBRS130LT3 2.0 250 1.8 225 1.6 POWER DISSIPATION (W) 275 qJA (°C/W) 200 175 150 125 100 1.0 oz 75 2.0 oz 50 1.0 oz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 0 2.0 oz Power based on TA = 25°C 0 100 200 300 400 COPPER AREA 500 600 700 0 0 (mm2) 100 200 300 400 COPPER AREA Figure 10. Thermal Resistance vs. Copper Area 500 600 700 (mm2) Figure 11. Power Dissipation vs. Copper Area http://onsemi.com 5 MBRS130LT3 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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