ONSEMI PZTA92T1G

PZTA92T1G
High Voltage Transistor
PNP Silicon
Features
• Complement to PZTA42T1G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−300
Vdc
Collector−Base Voltage
VCBO
−300
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current
IC
−500
mAdc
Total Power Dissipation
up to @ TA = 25°C (Note 1)
PD
Storage Temperature Range
Tstg
−65 to +150
°C
Junction Temperature
TJ
150
°C
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SOT−223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
W
1.5
EMITTER 3
4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
1
Characteristic
Symbol
RqJA
Max
3
SOT−223
CASE 318E
STYLE 1
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient (Note 2)
2
Unit
MARKING DIAGRAM
°C/W
83.3
2. Device mounted on a FR−4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
AYW
P2DG
G
1
P2D
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
PZTA92T1G
Package
Shipping†
SOT−223
(Pb−Free)
1,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 9
1
Publication Order Number:
PZTA92T1/D
PZTA92T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristics
Min
Max
−300
−
−300
−
−5.0
−
−
−0.25
−
−0.1
25
40
40
−
−
−
−
−
−0.5
−0.9
−
6.0
50
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
Collector-Base Cutoff Current
(VCB = −200 Vdc, IE = 0)
ICBO
Emitter−Base Cutoff Current
(VBE = −3.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −30 mAdc, VCE = −10 Vdc)
hFE
Saturation Voltages
(IC = −20 mAdc, IB = −2.0 mAdc)
(IC = −20 mAdc, IB = −2.0 mAdc)
−
Vdc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Collector−Base Capacitance @ f = 1.0 MHz
(VCB = −20 Vdc, IE = 0)
Ccb
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 20 Vdc, f = 100 MHz)
pF
fT
MHz
3. Pulse Test Conditions, tp = 300 ms, d 0.02.
300
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
250
200
25°C
150
-55°C
100
50
0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
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2
100
PZTA92T1G
f,
T CURRENT-GAIN — BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
150
130
110
90
70
50
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
30
10
1000
3
1
Figure 2. Capacitance
5
11
13
15
7
9
IC, COLLECTOR CURRENT (mA)
17
19
21
Figure 3. Current−Gain − Bandwidth
1.4
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
1
IC, COLLECTOR CURRENT (A)
V, VOLTAGE (V)
1.2
10 ms
0.1
1.0 s
0.01
0.001
1
100
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
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3
1000
PZTA92T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
mm Ǔ
ǒinches
1.5
SCALE 6:1
0.059
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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For additional information, please contact your local
Sales Representative
PZTA92T1/D