MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 92 93 Unit Collector −Emitter Voltage VCEO −300 −200 Vdc Collector −Base Voltage VCBO −300 −200 Vdc Emitter −Base Voltage VEBO −5.0 −5.0 Collector Current — Continuous IC mAdc THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 2 SOT−23 (TO−236AF) CASE 318 STYLE 6 MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C MARKING DIAGRAM 3 Vdc −500 DEVICE MARKING Characteristic 2 EMITTER 2x M G 2x MG G = Specific Device Code = Date Code* = Pb−Free Package Symbol Max Unit PD 225 mW 1.8 mW/°C (*Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Package Shipping† MMBTA92LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SMMBTA92LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) SMMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) MMBTA93LT1G SOT−23 (Pb−Free) Device 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 10 1 Publication Order Number: MMBTA92LT1/D MMBTA92L, SMMBTA92L, MMBTA93L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit −300 −200 − − −300 −200 − − −5.0 − − − −0.25 −0.25 − −0.1 25 40 − − 25 25 − − − − −0.5 −0.5 VBE(sat) − −0.9 Vdc fT 50 − MHz − − 6.0 8.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) MMBTA92, SMMBTA92 MMBTA93 Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) MMBTA92, SMMBTA92 MMBTA93 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = −200 Vdc, IE = 0) (VCB = −160 Vdc, IE = 0) MMBTA92, SMMBTA92 MMBTA93 Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) Both Types Both Types (IC = −30 mAdc, VCE = −10 Vdc) hFE MMBTA92, SMMBTA92 MMBTA93 Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) MMBTA92, SMMBTA92 MMBTA93 Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) MMBTA92, SMMBTA92 MMBTA93 Ccb pF 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 100 MMBTA92L, SMMBTA92L, MMBTA93L f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages 1000 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) 1.2 1.0 s 100 ms 10 ms 100 ms 100 10 ms 1.0 ms 10 1 Single Pulse Test TA = 25°C 1 100 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 1000 MMBTA92L, SMMBTA92L, MMBTA93L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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