NST45011MW6T1G Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. http://onsemi.com (3) (2) (1) Features • • • • Current Gain Matching to 10% Base−Emitter Voltage Matched to 2 mV Drop−In Replacement for Standard Device These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage VCBO 50 V Emitter −Base Voltage VEBO 6.0 V IC 100 mAdc Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 6 1 SOT−363 CASE 419B STYLE 1 MARKING DIAGRAMS 2F MG G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range Symbol Max Unit PD 380 250 mW 3.0 mW/°C 328 °C/W RqJA TJ, Tstg −55 to +150 °C 2F = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NST45011MW6T1G 1. FR−5 = 1.0 x 0.75 x 0.062 in Package Shipping† SOT−363 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 1 1 Publication Order Number: NST45011MW6/D NST45011MW6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage, (IC = 10 mA, VEB = 0) V(BR)CES 50 − − V Collector −Base Breakdown Voltage, (IC = 10 mA) V(BR)CBO 50 − − V Emitter −Base Breakdown Voltage, (IE = 1.0 mA) V(BR)EBO 6.0 − − V ICBO − − − − 15 5.0 nA mA 150 200 0.9 − 300 1.0 − 500 − − − − − 250 600 700 850 750 890 800 950 VBE(1) − VBE(2) 580 − − 660 − 1.0 700 770 2.0 fT 100 − − MHz Output Capacitance, (VCB = 10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure, (IC = 0.2 mA, VCE = 5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF − − 10 dB OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 2) hFE(1)/hFE(2) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 3) VBE(on) − mV mV mV SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product, (IC = 10 mA, VCE = 5 Vdc, f = 100 MHz) 2. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 3. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. http://onsemi.com 2 NST45011MW6T1G TYPICAL CHARACTERISTICS 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 5.0 Cib 3.0 Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 4. Base−Emitter Temperature Coefficient 10 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 1.0 50 70 100 Figure 2. “Saturation” and “On” Voltages 2.0 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 40 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 50 NST45011MW6T1G TYPICAL CHARACTERISTICS The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 7 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. 200 IC, COLLECTOR CURRENT (mA) 1s 3 ms 100 50 TA = 25°C TJ = 25°C 10 5.0 2.0 1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 VCE, COLLECTOR-EMITTER VOLTAGE (V) 65 100 Figure 7. Active Region Safe Operating Area http://onsemi.com 4 NST45011MW6T1G PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NST45011MW6/D