KERSEMI AUIRFR6215

AUTOMOTIVE GRADE
PD-96302
AUIRFR6215
HEXFET® Power MOSFET
Features
O
O
O
O
O
O
O
O
O
P-Channel
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
-150V
0.295:
RDS(on) max.
G
ID
S
-13A
D
Description
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
S
D
G
D-Pak
AUIRFR6215
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
ch
ch
e
dh
ch
Units
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
hj
Junction-to-Case
Junction-to-Ambient(PCB mount)
Junction-to-Ambient
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i
Typ.
Max.
Units
–––
–––
–––
1.4
50
110
°C/W
1
04/13/10
AUIRFR6215
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
-150
–––
–––
Conditions
VGS = 0V, ID = -250µA
c
f
= -6.6A f T = 150°C
–––
-0.20
–––
V/°C Reference to 25°C, ID = -1mA
–––
–––
0.295
VGS = -10V, ID = -6.6A
–––
–––
0.58
-2.0
–––
-4.0
V
S
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
3.6
–––
–––
Drain-to-Source Leakage Current
–––
–––
-25
–––
–––
-250
IGSS
V
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Ω
µA
nA
VGS = -10V, ID
J
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
h
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
td(off)
Min. Typ. Max. Units
–––
Conditions
–––
66
ID = -6.6A
–––
–––
8.1
–––
–––
35
VGS = -10V, See Fig 6 and 13
–––
14
–––
VDD = -75V
Rise Time
–––
36
–––
Turn-Off Delay Time
–––
53
–––
tf
Fall Time
–––
37
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
860
–––
Coss
Output Capacitance
–––
220
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
nC
ns
VDS =-120V
fh
ID = -6.6A
RG = 6.8Ω
RD = 12Ω, See Fig. 10
fh
Between lead,
nH
D
6mm (0.25in.)
G
from package
S
and center of die contact
VGS = 0V
pF
VDS = -25V
ƒ = 1.0MHz, See Fig.5
h
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
ch
Min. Typ. Max. Units
–––
–––
MOSFET symbol
-13
A
–––
-44
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.6
V
trr
Reverse Recovery Time
–––
160
240
ns
Qrr
Reverse Recovery Charge
–––
1.2
1.7
ton
Forward Turn-On Time
2
Conditions
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS =-6.6A, VGS = 0V
TJ = 25°C, IF =-6.6A
di/dt = 100A/µs
f
S
fh
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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AUIRFR6215
Qualification Information†
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification.
IR’s Industrial and Consumer
qualification level is granted by extension of the
higher Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
D PAK
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H3A
AEC-Q101-001
Charged Device Model
Class C5
AEC-Q101-005
RoHS Compliant
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Yes
3
AUIRFR6215
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
20µs PULSE WIDTH
Tc = 25°C
A
-4.5V
1
1
10
10
-4.5V
100
1
-VDS , Drain-to-Source Voltage (V)
2.5
TJ = 175°C
10
VDS = -50V
20µs PULSE WIDTH
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
5
A
100
Fig 2. Typical Output Characteristics
100
4
10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TC = 175°C
1
10
A
I D = -11A
2.0
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFR6215
2000
-VGS , Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
1200
Coss
800
Crss
400
0
1
10
100
A
I D = -6.6A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
-VDS , Drain-to-Source Voltage (V)
20
40
60
80
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS = -120V
VDS = -75V
VDS = -30V
TJ = 175°C
10
TJ = 25°C
1
100µs
10
1ms
VGS = 0V
0.1
0.2
0.6
1.0
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.8
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
100
A
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR6215
14
VGS
12
-ID , Drain Current (A)
RD
VDS
D.U.T.
RG
10
-
+
V DD
-10V
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
td(on)
2
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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L
VDS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
AUIRFR6215
800
TOP
BOTTOM
ID
-2.7A
-4.7A
-6.6A
600
400
200
A
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
-10V
QGS
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRFR6215
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
*
•
•
•
•
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRFR6215
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AURFR6215
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
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9
AUIRFR6215
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 14mH R G = 25Ω, IAS = -6.6A. (See Fig.12)
ƒ ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… This is applied for I-PAK, LS of D-PAK is measured between lead
and center of die contact
† Uses IRF6215 data and test conditions
‡ When mounted on 1" square PCB (FR-4 or G-10 Material ) For
recommended footprint and soldering techniques refer to
application note #AN-994
ˆ Rθ is measured at TJ approximately 90°C.
10
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