AUTOMOTIVE GRADE PD-96302 AUIRFR6215 HEXFET® Power MOSFET Features O O O O O O O O O P-Channel Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS D -150V 0.295: RDS(on) max. G ID S -13A D Description Specifically designed for Automotive applications of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S D G D-Pak AUIRFR6215 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) ch ch e dh ch Units -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 Thermal Resistance Parameter RθJC RθJA RθJA hj Junction-to-Case Junction-to-Ambient(PCB mount) Junction-to-Ambient wwwkersemi.com i Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W 1 04/13/10 AUIRFR6215 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units -150 ––– ––– Conditions VGS = 0V, ID = -250µA c f = -6.6A f T = 150°C ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.295 VGS = -10V, ID = -6.6A ––– ––– 0.58 -2.0 ––– -4.0 V S RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs IDSS Forward Transconductance 3.6 ––– ––– Drain-to-Source Leakage Current ––– ––– -25 ––– ––– -250 IGSS V Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Ω µA nA VGS = -10V, ID J VDS = VGS, ID = -250µA VDS = -50V, ID = -6.6A VDS = -150V, VGS = 0V h VDS = -120V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr td(off) Min. Typ. Max. Units ––– Conditions ––– 66 ID = -6.6A ––– ––– 8.1 ––– ––– 35 VGS = -10V, See Fig 6 and 13 ––– 14 ––– VDD = -75V Rise Time ––– 36 ––– Turn-Off Delay Time ––– 53 ––– tf Fall Time ––– 37 ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– Ciss Input Capacitance ––– 860 ––– Coss Output Capacitance ––– 220 ––– Crss Reverse Transfer Capacitance ––– 130 ––– nC ns VDS =-120V fh ID = -6.6A RG = 6.8Ω RD = 12Ω, See Fig. 10 fh Between lead, nH D 6mm (0.25in.) G from package S and center of die contact VGS = 0V pF VDS = -25V ƒ = 1.0MHz, See Fig.5 h Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ch Min. Typ. Max. Units ––– ––– MOSFET symbol -13 A ––– -44 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– -1.6 V trr Reverse Recovery Time ––– 160 240 ns Qrr Reverse Recovery Charge ––– 1.2 1.7 ton Forward Turn-On Time 2 Conditions showing the integral reverse D G p-n junction diode. TJ = 25°C, IS =-6.6A, VGS = 0V TJ = 25°C, IF =-6.6A di/dt = 100A/µs f S fh nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.kersemi.com AUIRFR6215 Qualification Information† Automotive (per AEC-Q101) †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model D PAK MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H3A AEC-Q101-001 Charged Device Model Class C5 AEC-Q101-005 RoHS Compliant www.kersemi.com Yes 3 AUIRFR6215 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 20µs PULSE WIDTH Tc = 25°C A -4.5V 1 1 10 10 -4.5V 100 1 -VDS , Drain-to-Source Voltage (V) 2.5 TJ = 175°C 10 VDS = -50V 20µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25°C 5 A 100 Fig 2. Typical Output Characteristics 100 4 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TC = 175°C 1 10 A I D = -11A 2.0 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com AUIRFR6215 2000 -VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1200 Coss 800 Crss 400 0 1 10 100 A I D = -6.6A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 -VDS , Drain-to-Source Voltage (V) 20 40 60 80 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs -I D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS = -120V VDS = -75V VDS = -30V TJ = 175°C 10 TJ = 25°C 1 100µs 10 1ms VGS = 0V 0.1 0.2 0.6 1.0 1.4 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.kersemi.com A 1.8 TC = 25°C TJ = 175°C Single Pulse 1 1 10ms 10 100 A 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFR6215 14 VGS 12 -ID , Drain Current (A) RD VDS D.U.T. RG 10 - + V DD -10V 8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 td(on) 2 tr t d(off) tf VGS 0 10% 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 A 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.kersemi.com L VDS D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) AUIRFR6215 800 TOP BOTTOM ID -2.7A -4.7A -6.6A 600 400 200 A 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V -10V QGS .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.kersemi.com .2µF IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRFR6215 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG * • • • • + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.kersemi.com AUIRFR6215 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AURFR6215 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code www.kersemi.com 9 AUIRFR6215 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 14mH R G = 25Ω, IAS = -6.6A. (See Fig.12) ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2% This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Uses IRF6215 data and test conditions When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994 Rθ is measured at TJ approximately 90°C. 10 www.kersemi.com