KERSEMI IRFR2307ZTRL

AUIRFR2307Z
Features
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
V(BR)DSS
75V
RDS(on) max.
16mΩ
ID (Silicon Limited)
53A
ID (Package Limited)
42A
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
G
D-Pak
AUIRFR2307Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
53
38
42
210
110
0.70
± 20
100
140
See Fig.12a, 12b, 15, 16
c
c
h
g
d
Units
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Thermal Resistance
RθJC
RθJA
RθJA
j
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
www.kersemi.com
i
Typ.
Max.
Units
–––
–––
–––
1.42
50
110
°C/W
1
07/23/2010
AUIRFR2307Z
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
30
–––
–––
–––
–––
–––
0.072
12.8
–––
–––
–––
–––
–––
–––
–––
–––
16
4.0
–––
25
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 32A
V VDS = VGS, ID = 100µA
S VDS = 25V, ID = 32A
µA VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
50
14
19
16
65
44
29
4.5
75
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2190
280
150
1070
190
400
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
nC
ns
nH
pF
ID = 32A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 32A
RG = 10 Ω
VGS = 10V
Between lead,
e
e
D
G
f
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
42
ISM
(Body Diode)
Pulsed Source Current
–––
–––
210
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
31
31
1.3
47
47
c
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 32A, VGS = 0V
TJ = 25°C, IF = 32A, VDD = 38V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.197mH
RG = 25Ω, IAS = 32A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
2
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population,
starting TJ = 25°C, L = 0.197mH, RG = 25Ω, IAS = 32A,
VGS =10V.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
www.kersemi.com
AUIRFR2307Z
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-PAK
MSL1
Class M4 (425V)
AEC-Q101-002
ESD
Human Body Model
Class H1B (1000V)
AEC-Q101-001
Charged Device
Model
RoHS Compliant
www.kersemi.com
Class (C5 (1125V)
AEC-Q101-005
Yes
3
AUIRFR2307Z
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
0.1
100
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 20V
≤60µs PULSE WIDTH
0.1
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current(Α)
1
VDS, Drain-to-Source Voltage (V)
1000
4
Tj = 175°C
1
TJ = 25°C
60
TJ = 175°C
40
20
VDS = 10V
380µs PULSE WIDTH
0
0
10
20
30
40
50
60
70
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.kersemi.com
AUIRFR2307Z
4000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
3000
C, Capacitance(pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
2000
1000
Coss
Crss
ID= 32A
VDS= 60V
VDS= 38V
VDS= 15V
16
12
8
4
0
0
1
10
0
100
VDS, Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.kersemi.com
40
60
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
0.10
20
QG Total Gate Charge (nC)
1.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR2307Z
60
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
LIMITED BY PACKAGE
ID , Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
ID = 32A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τ
Ri (°C/W)
0.7938
τi (sec)
0.000499
0.6257
0.005682
Ci= τi/Ri
Ci i/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.kersemi.com
AUIRFR2307Z
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
15V
500
I D
3.4A
4.6A
BOTTOM 32A
TOP
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
5.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
www.kersemi.com
VCC
VGS(th) Gate threshold Voltage (V)
QGS
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7
AUIRFR2307Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 32A
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
8
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
www.kersemi.com
AUIRFR2307Z
D.U.T
Driver Gate Drive
ƒ
+
‚
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
www.kersemi.com
9
AUIRFR2307Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR2307Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
10
www.kersemi.com
AUIRFR2307Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
www.kersemi.com
11