TYSEMI FMMT5089

Product specification
FMMT5089
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Small signal transistor.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
4.5
V
Collector current
IC
50
mA
Power dissipation
Ptot
330
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=1mA, IB=0
30
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=100mA,IE=0*
25
V
VCB=15V, IE=0
50
nA
VEB(off)=4.5V, IC=0
100
nA
Collector-emitter saturation voltage
VCE(sat) IC=10mA, IB=1mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=10mA, IB=1mA
0.8
V
Collector-base cut-off current
ICBO
Emitter-base current
IEBO
DC current gain
hFE
Current-gain-bandwidth product
fT
Output capacitance
Cobo
Emitter-base capacitance
Cebo
IC=100ìA, VCE=5V
400
IC=500mA, VCE=5V f=20MHz
50
4
pF
VBE=0.5V, f=1MHz, IC=0
10
pF
2
dB
Noise figure
NF
Small signal current transfer ratio
hfe
IC=1mA, VCE=5V f=1KHz
300 ìs; d
MHz
VCB=5V, f=1MHz, IE=0
IC=200mA, VCE=5V,
Rg=10KÙ, f=10Hz to 15KHz
* Pulse test: tp
1200
450
1800
0.02.
Marking
Marking
1R
http://www.twtysemi.com
[email protected]
4008-318-123
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