Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Peak collector current ICM 1 A Collector current IC 2 A Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 40 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 40 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector cutoff current ICBO Emitter cut-off current IEBO VCB=30V,VCES=30V 100 nA VEB=4V 100 nA IC=500mA,IB=50mA IC=1A,IB=100mA 0.3 0.50 V Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=1A,IB=100mA 1.1 V Base-emitter voltage * VBE(ON) IC=1A,VCE=5V 1.0 V IC=1mA,VCE=5V Static Forward Current Transfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d 300 IC=500mA,VCE=5V 300 IC=1A,VCE=5V 200 IC=2A,VCE=5V 35 IC=50mA,VCE=10V,f=100MHz 150 900 MHz 10 VCB=10V,f=1MHz pF 0.02. Marking Marking 41A http://www.twtysemi.com [email protected] 4008-318-123 1 of 1