MOTOROLA MBC13916

Freescale Semiconductor, Inc.
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MBC13916
The RF Building Block Series
Freescale Semiconductor, Inc...
General Purpose SiGe:C
RF Cascode Amplifier
GENERAL PURPOSE SiGe:C
RF CASCODE AMPLIFIER
The MBC13916 is a cost–effective, high isolation amplifier fabricated with
Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
intended to be a similar replacement for the MRFIC0916 and is housed in the
smaller SOT–343R surface mount package. As with the MRFIC0916, the
device is designed for general purpose RF applications, but has improved
high frequency gain and noise figure. On–chip bias circuitry sets the bias
point, while matching is accomplished off–chip, affording the maximum in
application flexibility.
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SEMICONDUCTOR
TECHNICAL DATA
Usable Frequency Range = 100 to 2500 MHz
19 dB typical gain at 900 MHz, VCC = 2.7 V
Pin 1.
2.
3.
4.
NFmin (Device Level) = 0.9 dB @ 900 MHz
NFmin (Device Level) = 1.9 dB @ 1.9 GHz
2.5 dBm typical Output Power at 1.0 dB Gain Compression at 900 MHz,
VCC = 2.7 V
45 dB Typical Reverse Isolation (Device Level) at 900 MHz, VCC = 2.7 V
Gnd
RF In
RF Out
Gnd
3
1
4.7 mA Typ Bias Current at VCC = 2.7 V
(Scale 4:1)
2.7 to 5.0 V Supply
Industry Standard SOT–343R Package
PLASTIC PACKAGE
SOT–343R
(Tape & Reel Only)
Available Only in Tape and Reel Packaging
Device Weight = 0.00642 g (Typ)
ORDERING INFORMATION
Device
Device Marking
Package
MBC13916T1
916
SOT–343R
Functional Block Diagram
Gnd
1
3
RF Out
RF In
2
4
Gnd
(SOT–343R package)
Definitive Data – Motorola reserves the right to change the Production detail specifications as
may be required to permit improvement in the design of its products.
MOTOROLA RF PRODUCTS DEVICE
ForDATA
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Rev 0
1
Freescale Semiconductor,
Inc.
MBC13916
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6.0
Vdc
RF Input Power
PRF
10
dBm
Power Dissipation
PDIS
100
mW
Supply Current
ICC
20
mA
Thermal Resistance, Junction to Case
RqJC
400
C/W
Storage Temperature Range
Tstg
–65 to 150
°C
Operating Case Temperature
TC
–40 to 100
°C
Freescale Semiconductor, Inc...
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and
Machine Model (MM) ≤50 V. Additional EST data available upon request.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency
fRF
100
–
2500
MHz
Supply Voltage
VCC
2.7
–
5.0
Vdc
DEVICE LEVEL CHARACTERISTICS (VCC = 2.7 V, TA = 25°C, measured in S–parameter test fixture, unless otherwise
noted.)
Characteristic
Symbol
|S21|2
Insertion Gain
f = 900 MHz
f = 1900 MHz
Maximum Stable Gain and/or Minimum Available Gain [Note 1]
f = 900 MHz
f = 1900 MHz
Min
Typ
Max
–
–
16.5
10
–
–
–
–
24.5
14.3
–
–
–
–
0.9
1.9
–
–
–
–
16.5
17
–
–
–
–
–45
–31
–
–
dB
MSG, MAG
Minimum Noise Figure [Note 2]
f = 900 MHz
f = 1900 MHz
NFmin
Output Third Order Intercept Point [Note 3]
f = 900 MHz
f = 1900 MHz
OIP3
Reverse Isolation
f = 900 MHz
f = 1900 MHz
|S12|2
Unit
dB
dB
dBm
dB
NOTES: 1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
S 21
S 21
Ǹ
MAG +
K " K2 * 1
if K u 1, MSG +
, if K t 1
S 12
S 12
|
ǒ
Ǔ|,
|
|
2. Device matched for best noise figure.
3. Zout matched for optimum IP3.
2
MOTOROLA RF PRODUCTS DEVICE DATA
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Inc.
MBC13916
ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, TA = 25°C, fRF = 900 MHz, Tested in Circuit Shown in Figure 1, unless
otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Small Signal Gain
S21
Noise Figure
NF
17
19
21
dB
–
1.25
–
dB
Power Output at 1.0 dB Gain Compression
P1dB
0
2.5
–
dBm
Output 3rd Order Intercept Point
OIP3
–
13
–
dBm
Reverse Isolation
S12
–
–42
–
dB
Supply Current
ICC
3.8
4.7
5.6
mA
Figure 1. 900 MHz Applications Circuit Configuration
Freescale Semiconductor, Inc...
VCC
100 pF
0.01 mF
8.2 nH
RF In
1
3
2
4
6.8 nH
47 pF
Zc = 50 W
L = 80 mils
2.0 pF
Zc = 50 W
L = 32 mils
2.2 pF
RF Out
Figure 2. 900 MHz Printed Circuit Board
3.05 cm
(1.2 in)
1.9 cm
(0.75 in)
MOTOROLA RF PRODUCTS DEVICE
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NOTE:
PCB material FR4
εr = 4.5
h = 25 mils
t = 1.75
3
Freescale Semiconductor,
Inc.
MBC13916
ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 3, unless
otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Small Signal Gain
S21
9.5
11.5
13.5
dB
Noise Figure
NF
–
2.1
–
dB
Power Output at 1.0 dB Gain Compression
P1dB
–
–4.0
–
dBm
Output 3rd Order Intercept Point
OIP3
–
5.5
–
dBm
Reverse Isolation
S12
–
–28
–
dB
Supply Current
ICC
3.8
4.7
5.6
mA
Figure 3. 1.9 GHz Application Configuration Circuit
VCC
Freescale Semiconductor, Inc...
0.01 mF
100 pF
6.8 nH
5.6 nH
3
2
4
3.3 pF
RF Out
Zc = 50 W
L = 73 mils
3.3 nH
3.3 pF
RF In
1
Zc = 50 W
L = 80 mils
Figure 4. 1900 MHz Printed Circuit Board
3.05 cm
(1.2 in)
1.9 cm
(0.75 in)
4
NOTE:
PCB material FR4
εr = 4.5
h = 25 mils
t = 1.75
MOTOROLA RF PRODUCTS DEVICE DATA
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Inc.
MBC13916
Figure 6. Output Power
versus Input Power
Figure 5. GUmax versus Frequency
30
VCC = 5.0 V
25
3.9 V
20
15
10
3.3 V
5.0
2.7 V
0
0.5
15
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
35
0
10
1.0
1.5
2.0
2.5
3.9 V
5.0
2.7 V
3.3 V
0
-5.0
f = 900 MHz
-10
-15
-30
3.0
VCC = 5.0 V
10
-25
-20
-15
-10
-5.0
f, FREQUENCY (GHz)
Pin, INPUT POWER (dBm)
Figure 7. Output Power
versus Input Power
Figure 8. Supply Current
versus Input Power
f = 1900 MHz
14
VCC = 5.0 V
5.0
3.9 V
0
-5.0
2.7 V
3.3 V
-10
-15
-20
-30
-25
-20
-15
-10
-5.0
0
12
0
VCC = 5.0 V
10
8.0
6.0
3.9 V
3.3 V
2.7 V
4.0
f = 900 MHz
2.0
0
-30
-25
-20
-15
-10
-5.0
0
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 9. Supply Current
versus Input Power
16
14
ICC, SUPPLY CURRENT (mA)
Freescale Semiconductor, Inc...
15
ICC, SUPPLY CURRENT (mA)
MAXIMUM UNILATERAL GAIN (dB)
40
12
10
8.0
6.0
4.0
VCC = 5.0 V
3.9 V
3.3 V
2.7 V
2.0
0
-30
f = 1900 MHz
-25
-20
-15
-10
-5.0
0
Pin, INPUT POWER (dBm)
MOTOROLA RF PRODUCTS DEVICE
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MBC13916
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Table 1. Scattering Parameters
(VCC = 2.7 V, 50 W System)
6
S11
S21
S12
S22
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.829
–11
11.98
165
0.001
17
0.955
–4
200
0.798
–21
11.43
152
0.002
47
0.957
–7
300
0.753
–31
10.69
139
0.002
55
0.956
–11
400
0.701
–39
10.12
128
0.003
56
0.955
–14
500
0.648
–46
9.28
118
0.003
51
0.955
–18
600
0.599
–53
8.66
108
0.004
49
0.954
–22
700
0.554
–58
7.95
98
0.004
41
0.947
–26
800
0.518
–61
7.33
90
0.004
24
0.941
–30
900
0.485
–65
6.83
82
0.004
15
0.933
–34
1000
0.458
–67
6.23
74
0.004
–4
0.926
–38
1100
0.438
–69
5.78
67
0.004
–28
0.915
–43
1200
0.426
–71
5.39
60
0.005
–50
0.902
–46
1300
0.417
–72
4.97
52
0.006
–74
0.893
–51
1400
0.414
–73
4.59
46
0.008
–93
0.879
–54
1500
0.415
–74
4.31
39
0.011
–106
0.868
–58
1600
0.421
–75
3.99
32
0.014
–115
0.851
–62
1700
0.430
–76
3.66
25
0.018
–125
0.835
–66
1800
0.441
–78
3.43
19
0.022
–131
0.818
–70
1900
0.455
–80
3.16
12
0.027
–139
0.803
–73
2000
0.474
–82
2.93
5
0.033
–146
0.777
–77
2100
0.490
–85
2.70
–1
0.039
–152
0.761
–81
2200
0.504
–88
2.48
–8
0.045
–159
0.735
–85
2300
0.524
–92
2.27
–14
0.052
–163
0.707
–89
2400
0.542
–95
2.09
–21
0.059
–169
0.683
–93
2500
0.559
–98
1.90
–28
0.067
–175
0.651
–98
2600
0.572
–103
1.70
–34
0.075
180
0.624
–102
2700
0.587
–106
1.56
–40
0.083
174
0.593
–107
2800
0.603
–110
1.40
–48
0.091
169
0.562
–111
2900
0.610
–114
1.26
–55
0.098
163
0.533
–116
3000
0.613
–118
1.11
–60
0.105
160
0.501
–120
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Table 2. Scattering Parameters
(VCC = 3.0 V, 50 W System)
S11
S21
S12
S22
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.812
–11
13.42
165
0.001
11
0.954
–3
200
0.778
–21
12.73
151
0.001
50
0.955
–7
300
0.731
–30
11.82
138
0.002
58
0.956
–11
400
0.677
–38
11.10
127
0.003
50
0.954
–14
500
0.623
–44
10.12
116
0.003
51
0.954
–18
600
0.575
–50
9.37
107
0.003
43
0.952
–22
700
0.533
–54
8.56
98
0.003
30
0.945
–26
800
0.499
–57
7.85
90
0.004
24
0.937
–30
900
0.470
–59
7.29
82
0.004
8
0.930
–34
1000
0.448
–61
6.63
74
0.003
–11
0.923
–38
1100
0.433
–63
6.14
67
0.004
–38
0.911
–42
1200
0.423
–64
5.72
60
0.005
–58
0.900
–46
1300
0.418
–65
5.27
53
0.006
–77
0.891
–50
1400
0.421
–66
4.87
47
0.008
–96
0.878
–54
1500
0.425
–67
4.56
40
0.011
–108
0.868
–58
1600
0.432
–68
4.23
34
0.014
–120
0.852
–61
1700
0.444
–70
3.89
27
0.018
–126
0.838
–65
1800
0.459
–72
3.63
21
0.022
–133
0.822
–69
1900
0.473
–74
3.35
15
0.027
–140
0.809
–73
2000
0.490
–77
3.12
8
0.033
–147
0.784
–77
2100
0.509
–80
2.87
2
0.039
–152
0.769
–80
2200
0.527
–83
2.64
–5
0.045
–159
0.744
–84
2300
0.545
–86
2.42
–11
0.051
–163
0.717
–88
2400
0.560
–90
2.23
–17
0.059
–170
0.694
–92
2500
0.579
–94
2.03
–24
0.067
–175
0.663
–97
2600
0.594
–98
1.82
–30
0.075
–180
0.637
–101
2700
0.606
–101
1.68
–36
0.083
175
0.607
–105
2800
0.620
–105
1.50
–43
0.090
169
0.576
–110
2900
0.630
–110
1.35
–50
0.097
164
0.548
–114
3000
0.636
–113
1.19
–55
0.105
160
0.516
–119
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Table 3. Scattering Parameters
(VCC = 3.3 V, 50 W System)
8
S11
S21
S12
S22
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.796
–11
14.82
164
0.001
25
0.954
–3
200
0.760
–20
13.98
150
0.001
50
0.955
–7
300
0.711
–29
12.90
137
0.002
46
0.955
–11
400
0.655
–36
12.03
126
0.002
55
0.955
–14
500
0.602
–42
10.90
115
0.003
50
0.954
–18
600
0.556
–46
10.04
106
0.003
45
0.954
–22
700
0.517
–50
9.12
97
0.003
34
0.947
–26
800
0.487
–52
8.34
89
0.003
22
0.940
–30
900
0.463
–54
7.72
82
0.003
11
0.933
–34
1000
0.444
–56
7.02
74
0.003
–6
0.927
–38
1100
0.432
–57
6.49
67
0.003
–40
0.917
–42
1200
0.428
–58
6.03
61
0.005
–69
0.905
–46
1300
0.427
–59
5.55
53
0.006
–88
0.896
–50
1400
0.430
–60
5.13
48
0.008
–99
0.883
–53
1500
0.437
–61
4.81
41
0.011
–111
0.874
–57
1600
0.449
–62
4.45
35
0.014
–118
0.858
–61
1700
0.462
–64
4.09
29
0.018
–128
0.843
–64
1800
0.475
–66
3.83
23
0.022
–134
0.829
–68
1900
0.493
–69
3.53
17
0.027
–140
0.815
–72
2000
0.512
–72
3.28
10
0.032
–148
0.790
–76
2100
0.529
–75
3.03
4
0.038
–152
0.776
–79
2200
0.544
–78
2.79
–2
0.045
–159
0.752
–83
2300
0.565
–82
2.56
–8
0.051
–164
0.726
–87
2400
0.583
–85
2.37
–14
0.058
–169
0.704
–91
2500
0.599
–89
2.16
–21
0.067
–175
0.674
–96
2600
0.613
–93
1.94
–27
0.075
–179
0.648
–100
2700
0.629
–97
1.79
–32
0.083
175
0.621
–105
2800
0.643
–101
1.60
–39
0.091
170
0.589
–109
2900
0.650
–105
1.44
–46
0.098
164
0.562
–114
3000
0.653
–109
1.28
–51
0.105
160
0.531
–118
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Table 4. Scattering Parameters
(VCC = 3.9 V, 50 W System)
S11
S21
S12
S22
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.768
–10
17.37
163
0.001
5
0.951
–3
200
0.728
–19
16.21
148
0.001
44
0.952
–7
300
0.676
–27
14.75
135
0.002
39
0.953
–11
400
0.621
–33
13.55
124
0.002
44
0.952
–14
500
0.573
–37
12.13
113
0.002
55
0.952
–18
600
0.532
–41
11.07
104
0.003
41
0.951
–22
700
0.498
–43
9.96
96
0.003
36
0.943
–26
800
0.477
–45
9.06
88
0.003
20
0.937
–29
900
0.461
–46
8.36
81
0.002
13
0.930
–33
1000
0.448
–47
7.56
74
0.002
–25
0.925
–37
1100
0.442
–48
6.97
68
0.003
–54
0.914
–41
1200
0.444
–49
6.48
62
0.005
–75
0.903
–45
1300
0.448
–50
5.95
54
0.006
–94
0.895
–49
1400
0.455
–51
5.50
49
0.008
–107
0.883
–52
1500
0.465
–53
5.15
43
0.011
–113
0.875
–56
1600
0.480
–55
4.77
37
0.014
–122
0.860
–60
1700
0.495
–56
4.39
32
0.018
–130
0.847
–63
1800
0.507
–59
4.11
26
0.022
–136
0.834
–67
1900
0.525
–62
3.80
20
0.027
–142
0.821
–71
2000
0.546
–65
3.54
14
0.032
–148
0.799
–74
2100
0.565
–67
3.28
8
0.038
–153
0.785
–78
2200
0.578
–71
3.02
2
0.044
–160
0.763
–82
2300
0.598
–75
2.78
–3
0.051
–163
0.739
–85
2400
0.617
–79
2.57
–9
0.059
–169
0.719
–90
2500
0.633
–82
2.36
–15
0.066
–174
0.690
–94
2600
0.645
–86
2.12
–21
0.073
–179
0.666
–98
2700
0.660
–90
1.96
–27
0.082
176
0.639
–103
2800
0.678
–94
1.76
–33
0.089
171
0.609
–107
2900
0.683
–98
1.59
–39
0.097
165
0.583
–112
3000
0.683
–102
1.42
–44
0.105
162
0.553
–116
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Table 5. Scattering Parameters
(VCC = 5.0 V, 50 W System)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.719
–9
21.47
161
0.001
5
0.939
–3
200
0.678
–17
19.60
145
0.001
18
0.939
–7
300
0.628
–23
17.43
132
0.001
38
0.940
–10
400
0.579
–27
15.66
120
0.002
47
0.937
–14
500
0.540
–30
13.78
110
0.002
38
0.936
–18
600
0.512
–32
12.40
101
0.003
37
0.934
–22
700
0.492
–34
11.05
93
0.002
32
0.927
–26
800
0.480
–34
9.97
86
0.002
9
0.920
–30
900
0.472
–35
9.12
79
0.002
–14
0.914
–34
1000
0.470
–37
8.21
73
0.002
–54
0.908
–38
Freescale Semiconductor, Inc...
f
(MHz)
10
1100
0.473
–37
7.54
67
0.003
–75
0.899
–42
1200
0.478
–39
6.97
61
0.004
–90
0.890
–46
1300
0.484
–40
6.37
54
0.006
–101
0.884
–50
1400
0.496
–42
5.86
50
0.008
–114
0.875
–54
1500
0.509
–44
5.49
44
0.010
–120
0.871
–57
1600
0.521
–46
5.08
39
0.013
–128
0.858
–60
1700
0.535
–49
4.67
34
0.017
–133
0.848
–63
1800
0.552
–51
4.38
29
0.021
–139
0.838
–67
1900
0.570
–54
4.06
23
0.025
–144
0.829
–70
2000
0.587
–56
3.80
18
0.030
–150
0.807
–73
2100
0.604
–60
3.54
13
0.036
–154
0.795
–76
2200
0.621
–63
3.28
7
0.042
–160
0.772
–79
2300
0.643
–67
3.04
2
0.048
–164
0.746
–83
2400
0.658
–70
2.84
–4
0.056
–169
0.722
–87
2500
0.673
–74
2.61
–10
0.063
–175
0.687
–91
2600
0.690
–78
2.36
–16
0.071
–179
0.657
–96
2700
0.705
–82
2.19
–21
0.079
176
0.623
–101
2800
0.715
–86
1.97
–27
0.088
170
0.588
–107
2900
0.720
–91
1.78
–33
0.094
164
0.556
–113
3000
0.723
–94
1.57
–38
0.101
161
0.523
–119
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OUTLINE DIMENSIONS
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PLASTIC PACKAGE
SOT–343R
MOTOROLA RF PRODUCTS DEVICE
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MBC13916
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