MOTOROLA MHVIC915R2/D

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
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The MHVIC915R2 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26
to 28 Volts) LDMOS IC technology and integrates a multi–stage structure.
Its wideband On–Chip integral matching circuitry makes it usable from 746
to 960 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, and CDMA. The device is
packaged in a PFP–16 flat pack package that provides excellent thermal
performance through a solderable backside contact.
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CDMA, GSM/GSM EDGE
746–960 MHz, 15 W, 27 V
RF LDMOS WIDEBAND
INTEGRATED AMPLIFIER
• Typical CDMA Performance: 869–894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 =
120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Driver Application
Output Power — 23 dBm
Power Gain — 31 dB
Adjacent Channel Power Ratio —
–60 dBc @ 750 kHz in a 30 kHz BW
–66 dBc @ 1.98 MHz in a 30 kHz BW
Output Application
Output Power — 34 dBm
PAE = 21%
Adjacent Channel Power Ratio —
–50 dBc @ 750 kHz in a 30 kHz BW
• Typical GSM Performance: 921–960 MHz, 26 Volts
Output Power — 15 W P1dB
Power Gain — 30 dB @ P1dB
Drain Efficiency = 56% @ P1dB
• On–Chip Matching (50 Ohm Input, >9 Ohm Output)
• On–Chip Current Mirror gm Sensing FET for Self Bias Application
• Integrated Temperature Compensation Capability
• Usable for SCPA and MCPA Architecture
• Integrated ESD Protection
• Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch
Reel.
CASE 978–03
PFP–16
PLASTIC
PIN CONNECTIONS
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MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
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MHVIC915R2
1
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MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
Freescale Semiconductor, Inc...
Thermal Resistance, Junction to Case
°C/W
RθJC
Driver Application
(Pout = 0.2 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
5.07
Output Application
(Pout = 2.5 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
3.73
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 50 mA
Stage 2, 26 Vdc, IDQ = 140 mA
3.41
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C4 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 οhm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 880 MHz,
1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Common–Source Amplifier Power Gain (Pout = 23 dBm)
Gps
29
31
—
dB
η
—
21
—
%
IRL
—
–12
–9
dB
Adjacent Channel Power Ratio (Pout = 23 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
–60
–55
dBc
Adjacent Channel Power Ratio (Pout = 34 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
–50
—
dBc
GF
—
0.2
0.4
dB
IBSD
0.8
1.2
1.6
mA
Power Added Efficiency (Pout = 34 dBm)
Input Return Loss (Pout = 23 dBm)
Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz)
Bias Sense FET Drain Current
VBSD = 27 V
VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA
(continued)
MHVIC915R2
2
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ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
PERFORMANCE TESTS (In Motorola Test Fixture, 50 οhm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 865–895 MHz
Symbol
Min
Typ
Max
Unit
Quiescent Current Accuracy over Temperature (–10 to 85°C) at Nominal Value
∆Iqt
—
±5
—
%
Gain Flatness @ Pout = 23 dBm (800 MHz to 960 MHz)
GF
—
0.20
—
dB
Deviation from Linear Phase @ Pout = 23 dBm
∅
—
±0.2
—
°
Delay
—
2.2
—
ns
∆∅
—
±10
—
°
Rating
Group Delay @ Pout = 23 dBm
Insertion Phase Window @ Pout = 23 dBm (part to part)
GSM FUNCTIONAL TESTS (In Motorola GSM Test Fixture, 50 οhm system) VDS = 26 V, IDQ1 = 50 mA, IDQ2 = 140 mA, 921–960 MHz, CW
Freescale Semiconductor, Inc...
Rating
Symbol
Min
Typ
Max
Unit
Output Power at 1dB Compression Point
P1dB
—
15
—
Watts
Common–Source Amplifier Power Gain @ P1dB
Gain
—
30
—
dB
Drain Efficiency @ P1dB
η
—
56
—
%
Input return Loss @ P1dB
IRL
—
–16
—
dB
EVM @ 5 W
Third Order Intermodulation Distortion (15 W PEP, 2 Tone 100 kHz spacing)
Drain Efficiency (15 W PEP, 2 Tone 100 kHz spacing)
MOTOROLA RF DEVICE DATA
—
—
0.9
—
%
IMD3
—
–30
—
dBc
η
—
35
—
%
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MHVIC915R2
3
Freescale Semiconductor, Inc.
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Z1
Z2
Z3
Z4
Z5
Z6
0.0438″ x 0.400″ 50 Ω Microstrip
0.1709″ x 0.1004″ Microstrip
(not including IC pad length)
0.1222″ x 0.1944″ Microstrip
0.0836″ x 0.3561″ Microstrip
0.0438″ x 0.2725″ Microstrip
0.0504″ x 0.3378″ Microstrip
Z7
Z8
Z9
Z10
Z11
Z12
PCB
0.0504″ x 0.480″ Microstrip
0.0252″ x 0.843″ Microstrip
0.0252″ x 0.167″ Microstrip
0.040″ x 0.850″ Microstrip
0.025″ x 0.400″ Microstrip
0.020″ x 0.710″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 1. MHVIC915 746–960 MHz Test Circuit Schematic
Table 1. MHVIC915 746–960 MHz Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1, C2
4.7 pF High Q Capacitors (0603)
ATC600S4R7CW
ATC
C3, C4
47 pF NPO Capacitors (0805)
GRM40–001COG470J050BD
Murata
C5, C8, C10, C11
1 µF X7R Chip Capacitors (1214)
GRM42–2X7R105K050AL
Murata
C6
10 µF, 50 V Electrolytic Capacitor
ECEV1HA100SP
Panasonic
C7, C9, C12
0.01 µF X7R Chip Capacitors (0805)
GRM40X7R103J050BD
Murata
C13
8.2 pF NPO Chip Capacitor (0805)
GRM40–001COG8R2C050BD
Murata
R1, R2, R5
1 kW Chip Resistors (0603)
RM73B2AT102J
KOA Speer
R3, R4
100 kW Chip Resistors (0603)
RM73B2AT104J
KOA Speer
MHVIC915R2
4
MOTOROLA RF DEVICE DATA
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MHVIC915
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Freescale Semiconductor, Inc...
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Figure 2. MHVIC915 746–960 MHz Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MHVIC915R2
5
Freescale Semiconductor, Inc.
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TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM)
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Power
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Figure 3. Power Gain versus Output Power
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Figure 6. Power Added Efficiency versus
Frequency
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Figure 5. Power Gain versus Frequency
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Figure 7. Error Vector Magnitude versus
Output Power
Figure 8. Spectral Regrowth @ 400 kHz versus
Output Power
MHVIC915R2
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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Freescale Semiconductor, Inc.
"+3->03)970?00@780
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Figure 12. Power Gain versus Supply Voltage
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Figure 9. Spectral Regrowth @ 600 kHz versus
Output Power
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TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM)
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Figure 13. Input Return Loss versus Output
Power
Figure 14. Adjacent Channel Power Ratio
versus Output Power
MOTOROLA RF DEVICE DATA
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MHVIC915R2
7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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MHz
Zin
Ω
Zload
Ω
750
42.11 – j2.79
8.24 + j5.33
765
40.86 – j1.37
8.31 + j5.56
780
40.09 + j0.06
8.39 + j5.82
795
39.77 + j1.52
8.50 + j5.95
810
39.89 + j3.01
8.62 + j6.02
825
40.49 + j4.39
8.82 + j6.12
840
41.48 + j5.70
8.94 + j6.19
855
42.89 + j6.73
9.12 + j6.17
870
43.51 + j7.03
9.16 + j6.12
885
46.81 + j7.87
9.33 + j6.09
900
49.21 + j7.74
9.38 + j5.95
915
51.79 + j7.02
9.50 + j5.85
930
54.48 + j5.65
9.47 + j5.73
945
57.05 + j3.61
9.54 + j5.63
960
59.16 + j0.75
9.42 + j5.45
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RF input to ground.
Zload
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from drain to ground.
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load
Figure 15. Series Equivalent Input and Output Impedance
MHVIC915R2
8
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
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MHVIC915R2
9
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MHVIC915R2
10
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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NOTES
MOTOROLA RF DEVICE DATA
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MHVIC915R2
11
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
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CASE 978–03
ISSUE B
PFP–16
PLASTIC
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals,” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2003
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81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852–26668334
HOME PAGE: http://motorola.com/semiconductors
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12
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MHVIC915R2/D