MOTOROLA MBC13720T1

Freescale Semiconductor, Inc.
Technical Data
MBC13720/D
Rev. 2, 12/2003
MBC13720
SiGe:C Low Noise
Amplifier with Bypass
Switch
Freescale Semiconductor, Inc...
Package Information
Plastic Package
Case 419B
(SOT-363)
Ordering Information
Device
Device Marking
Package
MBC13720T1
20
SOT-363
The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz
multistandard wireless applications. The input and output match is external to allow
maximum design flexibility. The LNA has two selectable current settings as well as standby
mode. The LNA will operate from a 2.5 to 3.0 V supply. The MBC13720 is fabricated using
Motorola's Advanced RF BiCMOS process with the SiGe:C option and housed in an ultra
small SOT-363 surface mount package.
•
Selectable Current, 5.0 mA or 11 mA
•
Standby Mode to Turn Off Device Completely
•
High Input IP3:
10 dBm @ 1.9 GHz
13 dBm @ 2.4 GHz
•
Low Noise Figure:
1.38 dB @ 1.9 GHz
1.55 dB @ 2.4 GHz
•
Gain @ 9.0 mA, 2.75 V:
14.5 dB @ 1.9 GHz
12 dB @ 2.4 GHz
•
Suitable for use from 400 MHz to 2.4 GHz
•
Bias Stabilized for Device and Temperature Variations
•
Ultra Small SOT-363 Surface Mount Package
•
Available Only in Tape and Reel Packaging
Definitive Data - Motorola reserves the right to change the Production detail specifications as may be required to
permit improvements in the design of its product. © Motorola, Inc., 2003. All rights reserved.
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Specifications
EN1
EN2
VCC
Bias
Control
RF In
RF Out
Figure 1. Simplified Block Diagram
Freescale Semiconductor, Inc...
1 Specifications
Table 1. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
VCC
3.3
V
Storage Temperature Range
Tstg
-65 to 150
°C
Operating Ambient Temperature Range
TA
-30 to 85
°C
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and
Machine Model (MM) ≤50 V. Additional EST data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Operating Voltage
VCC
2.5
2.7
3.0
V
Frequency Range
fRF
400
-
2400
MHz
Table 3. Electrical Characteristics (VCC = 2.75, TA = 25°C)
Characteristic
2
Symbol
Current Consumption
Low IP3
High IP3
Bypass
ICC
Input/Output Return Loss
Low IP3
High IP3
Bypass
RL
RF Gain (900 MHz)
Low IP3
High IP3
Bypass
G
Min
Typ
Max
Unit
-
5.0
11
0
-
mA
mA
µA
-
10
10
12
-
-
20
21
-2.9
-
dB
dB
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Freescale Semiconductor, Inc.
Specifications
Table 3. Electrical Characteristics (Continued) (VCC = 2.75, TA = 25°C)
Freescale Semiconductor, Inc...
Characteristic
Symbol
RF Gain (1.9 GHz)
Low IP3
High IP3
Bypass
G
RF Gain (2.4 GHz)
Low IP3
High IP3
Bypass
G
Noise Figure
900 MHz
1.9 GHz
2.4 GHz
NF
Input IP3 (900 MHz)
Low IP3
High IP3
Bypass
IIP3
Input IP3 (1.9 GHz)
Low IP3
High IP3
Bypass
IIP3
Input IP3 (2.4 GHz)
Low IP3
High IP3
Bypass
IIP3
Output 1dB Compression (900 MHz)
Low IP3
High IP3
Bypass
P1dB
Output 1db Compression (1.9 GHz)
Low IP3
High IP3
Bypass
P1dB
Output 1dB Compression (2.4 GHz)
Low IP3
High IP3
Bypass
P1dB
Reverse Isolation
Low IP3
High IP3
|S12|
MOTOROLA
Min
Typ
Max
-
13
14.5
-2.5
-
-
11.5
12
-2.8
-
-
1.2
1.38
1.55
-
-
-3.5
10
27
-
-
4.0
10
29
-
-
6.0
13
25
-
-
12
11.5
5.0
-
-
11
11.5
5.0
-
-
14
14
5.0
-
-
25
20
-
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
MBC13720 Technical Data
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3
Specifications
Freescale Semiconductor, Inc.
Table 4. Truth Table
EN2
State
Current Consumption
0
0
Standby
< 20 µA
0
1
Bypass
0 µA
1
0
High IP3
11 mA (approx.)
1
1
Low IP3
5.0 mA (approx.)
Logic state of ″1″ equals VCC voltage. Logic state of ″0″ equals ground potential.
Freescale Semiconductor, Inc...
NOTE:
EN1
4
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Parameters
2 Parameters
Table 5. High IP3 Mode Scattering Parameters (VCC = 2.7 V, EN1 = High, EN2 = Low)
Freescale Semiconductor, Inc...
f
(MHz)
S21
S11
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
100
0.661
-8
21.189
161
0.010
36
0.829
-6
200
0.629
-14
18.913
146
0.014
54
0.801
-10
300
0.583
-20
16.730
134
0.019
61
0.764
-14
400
0.544
-21
14.168
123
0.024
67
0.726
-15
500
0.526
-23
12.141
116
0.029
71
0.709
-16
600
0.502
-25
10.757
111
0.034
73
0.690
-17
700
0.486
-26
9.523
106
0.039
75
0.676
-18
800
0.473
-27
8.531
101
0.044
76
0.665
-19
900
0.464
-28
7.725
98
0.050
77
0.656
-20
1000
0.457
-29
7.028
94
0.056
78
0.650
-21
1100
0.450
-30
6.461
92
0.061
79
0.643
-22
1200
0.446
-31
5.990
89
0.067
79
0.639
-23
1300
0.445
-32
5.551
86
0.073
80
0.634
-24
1400
0.443
-33
5.226
84
0.079
80
0.632
-25
1500
0.440
-35
4.903
82
0.085
80
0.628
-26
1600
0.437
-35
4.611
80
0.091
80
0.626
-27
1700
0.439
-37
4.370
78
0.097
80
0.623
-28
1800
0.439
-38
4.160
76
0.103
81
0.622
-29
1900
0.437
-40
3.981
74
0.111
81
0.618
-31
2000
0.440
-41
3.822
73
0.117
81
0.617
-32
2100
0.439
-42
3.675
71
0.124
81
0.613
-34
2200
0.443
-44
3.530
69
0.132
81
0.612
-35
2300
0.444
-45
3.416
68
0.140
82
0.611
-37
2400
0.448
-48
3.322
66
0.149
82
0.608
-38
2500
0.452
-50
3.236
64
0.159
81
0.605
-41
2600
0.456
-52
3.151
63
0.169
82
0.600
-43
2800
0.460
-57
3.032
59
0.193
81
0.589
-48
3000
0.472
-65
2.943
55
0.223
80
0.573
-54
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5
Parameters
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Table 6. Bypass Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = High)
Freescale Semiconductor, Inc...
f
(MHz)
6
S21
S11
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
100
0.958
-11
0.115
79
0.116
80
0.950
-8
200
0.921
-21
0.222
70
0.224
70
0.925
-16
300
0.881
-30
0.318
61
0.319
61
0.889
-23
400
0.832
-38
0.399
53
0.396
53
0.849
-29
500
0.786
-45
0.457
45
0.462
46
0.806
-35
600
0.737
-52
0.515
39
0.513
39
0.764
-41
700
0.693
-57
0.552
33
0.553
33
0.724
-45
800
0.654
-63
0.585
28
0.584
28
0.689
-49
900
0.618
-67
0.610
23
0.609
23
0.655
-53
1000
0.587
-72
0.626
19
0.627
19
0.626
-57
1100
0.561
-76
0.642
16
0.643
15
0.598
-61
1200
0.533
-80
0.655
12
0.654
12
0.573
-64
1300
0.514
-83
0.660
9.0
0.663
8
0.549
-67
1400
0.493
-87
0.673
6.0
0.669
5
0.527
-71
1500
0.478
-90
0.672
2.0
0.673
2
0.506
-74
1600
0.461
-93
0.674
-1.0
0.676
-1
0.486
-78
1700
0.449
-96
0.675
-4.0
0.677
-4
0.468
-82
1800
0.435
-99
0.673
-7.0
0.675
-6
0.448
-85
1900
0.427
-102
0.671
-9.0
0.673
-9
0.431
-89
2000
0.421
-104
0.668
-11
0.670
-11
0.413
-93
2100
0.412
-107
0.663
-14
0.664
-14
0.397
-98
2200
0.407
-110
0.655
-16
0.658
-16
0.380
-103
2300
0.401
-114
0.647
-19
0.648
-19
0.364
-109
2400
0.396
-117
0.634
-21
0.638
-21
0.347
-115
2500
0.396
-121
0.622
-23
0.623
-23
0.335
-122
2600
0.396
-124
0.608
-25
0.609
-26
0.319
-130
2800
0.393
-132
0.569
-29
0.571
-29
0.294
-147
3000
0.397
-142
0.527
-32
0.528
-32
0.276
-167
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Parameters
Table 7. Standby Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = Low)
Freescale Semiconductor, Inc...
f
(MHz)
S21
S11
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
100
0.963
-4
0.010
35
0.010
43
0.951
-3
200
0.953
-7
0.014
61
0.016
61
0.948
-4
300
0.949
-10
0.022
71
0.022
68
0.947
-6
400
0.945
-13
0.029
76
0.029
72
0.945
-8
500
0.943
-16
0.036
75
0.036
74
0.944
-10
600
0.937
-19
0.043
70
0.043
74
0.941
-12
700
0.932
-21
0.050
76
0.049
74
0.938
-15
800
0.926
-24
0.054
74
0.056
74
0.935
-16
900
0.920
-27
0.062
75
0.063
73
0.932
-19
1000
0.914
-30
0.069
72
0.069
73
0.928
-21
1100
0.911
-33
0.075
72
0.075
72
0.923
-23
1200
0.903
-36
0.082
71
0.081
71
0.919
-25
1300
0.897
-38
0.086
72
0.087
70
0.913
-27
1400
0.892
-41
0.094
69
0.092
70
0.908
-29
1500
0.885
-44
0.097
69
0.097
69
0.902
-31
1600
0.877
-47
0.101
68
0.102
69
0.894
-33
1700
0.874
-50
0.104
68
0.106
69
0.887
-35
1800
0.861
-52
0.109
69
0.110
69
0.878
-37
1900
0.855
-55
0.115
69
0.115
69
0.868
-39
2000
0.850
-58
0.120
69
0.118
69
0.857
-42
2100
0.841
-61
0.120
70
0.122
70
0.845
-44
2200
0.831
-64
0.127
71
0.126
71
0.832
-46
2300
0.821
-67
0.132
72
0.132
73
0.816
-49
2400
0.808
-70
0.138
74
0.138
74
0.798
-52
2500
0.797
-73
0.146
75
0.146
76
0.776
-55
2600
0.784
-76
0.155
79
0.156
78
0.751
-58
2800
0.751
-82
0.183
80
0.184
81
0.688
-64
3000
0.720
-89
0.222
82
0.225
81
0.609
-70
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7
Parameters
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Table 8. Low IP3 Noise Parameters (VCC = 2.7 V, EN1 = High, EN2 = High)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
0.57
0.26
15.5
0.19
25.3
410
0.57
0.26
15.7
0.19
24.93
420
0.58
0.26
16
0.19
24.8
430
0.58
0.26
16.2
0.19
24.68
440
0.59
0.26
16.5
0.19
24.56
450
0.59
0.26
16.7
0.19
24.44
460
0.59
0.26
16.9
0.19
24.32
470
0.6
0.26
17.2
0.19
24.2
480
0.6
0.26
17.4
0.19
24.09
490
0.6
0.26
17.7
0.19
23.97
500
0.61
0.26
17.9
0.19
23.85
550
0.63
0.26
19.1
0.19
23.01
600
0.64
0.26
20.3
0.19
22.59
650
0.66
0.25
21.5
0.19
22.16
700
0.67
0.25
22.7
0.19
21.74
750
0.69
0.25
23.9
0.19
21.32
800
0.7
0.25
25.1
0.19
20.89
850
0.72
0.24
26.4
0.19
20.47
900
0.73
0.24
27.6
0.19
20.05
1000
0.76
0.24
30
0.19
19.2
Table 9. High IP3 Noise Parameters (VCC = 2.7 V, EN1 = High, EN2 = Low)
8
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
0.65
0.2
5.5
0.22
26.21
410
0.65
0.2
6.1
0.22
26.06
420
0.65
0.2
6.7
0.22
25.91
430
0.66
0.19
7.3
0.21
25.76
440
0.66
0.19
7.9
0.21
25.61
450
0.66
0.19
8.5
0.21
25.46
460
0.66
0.19
9.1
0.21
25.31
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Table 9. High IP3 Noise Parameters (Continued) (VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
470
0.66
0.19
9.7
0.21
25.16
480
0.67
0.18
10.3
0.2
25.01
490
0.67
0.18
10.9
0.2
24.87
500
0.67
0.18
11.5
0.2
24.54
550
0.68
0.17
14.5
0.19
24.06
600
0.69
0.16
17.5
0.19
23.59
650
0.7
0.15
20.5
0.18
23.12
700
0.71
0.14
23.5
0.18
22.65
750
0.72
0.13
26.5
0.17
22.17
800
0.73
0.12
29.4
0.17
21.7
850
0.74
0.11
32.4
0.16
21.23
900
0.75
0.1
35.4
0.16
20.76
1000
0.77
0.09
41.4
0.15
19.81
3 Application Information
The MBC13720 SiGe:C LNA is designed for applications in the 400 MHz to 2.4 GHz range. It has four
different modes; Low IP3, High IP3, Bypass, and Standby. The IC is programmable through the Enable 1
and 2 pins. In Low IP3 mode, the current consumption is optimized. Current consumption is higher in High
IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High IP3
modes is typically 1.0 dB and typically the Low IP3 mode has a slightly better noise figure performance.
The internal bypass switch is designed for broadband applications. One of the advantages of the
MBC13720 is the simplification of matching network in both bypass and amplifier modes. The bypass
switch is designed such that the changes of input and output return losses between bypass mode and
amplifier mode is minimized. As a result, the mismatch at the LNA input and output is minimized and
therefore, the matching network design is simplified as well.
In the design of the external matching network, conjugate match condition does not necessarily provide the
best noise figure performance. Balancing between noise figure, gain, and intercept point is the major
design consideration. Typical circuits are provided in Figures 2 and 3 for 1.9 GHz, 2.4 GHz and 900 MHz
applications.
In Figure 2, it shows the typical application circuit at 1.9 and 2.4 GHz. The noise figure, input intercept
point, gain, and return losses are optimized. L2 and C2 act as a low frequency trap to improve the input
intercept point. The noise figure measured on this board is 1.4 dB (in Low IP3 mode) at 1.9 GHz, including
the external components, connectors, and PC board. The input third order intercept point is 10 dBm (in
High IP3 mode).
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Application Information
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In Figure 3, the typical application circuit at 900 MHz is shown. The input low frequency trap again is used
to maximize the input intercept point. It has moderate IP3 performance and high gain. For higher IP3,
Figure 4 shows the application circuit with feedback network. Capacitive feedback method is used to
reduce the gain and therefore increase the 3rd order input intercept point. The feedback circuit is designed
to provide unconditional stability.
The corresponding PCBs are shown in Figures 5 through 10. Typical characteristics of the application
boards are shown in Table 10.
C1 27 pF
RF In
T1
4
L1
8.2 nH
5
Freescale Semiconductor, Inc...
C2
4.7 µF
T2
3
C3
1.0 pF
2
Bias
Control
6
1
C6 27 pF
T3
RF
Out
L2
2.7 nH
R1
330 Ω
C4
4.7 µF
EN1
EN2
T1, T2, T3 = 50 Ω Microstrip Line @ 150 mils
Figure 2. Typical 1.9 and 2.4 GHz LNA
Application Schematic
C1 47 pF L1 8.2 nH
RF In
L2
47 nH
C2
4.7 µF
4
3
5
2
6
Bias
Control
T1
R1 330 Ω
T2
C3 3.0 pF
RF
Out
L3
8.2 nH
1
C4
47 pF
EN1
EN2
C5
4.7 µF
Figure 3. Typical 900 MHz LNA
Application Schematic
10
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C3 0.5 pF
C1 150 pF
RF In
L1
22 nH
C2
4.7 µF
C5 1.0 pF
4
3
5
2
6
EN1
C4 0.5 pF
Bias
Control
R2 10 Ω
R1 330 Ω
C6 3.0 pF
RF Out
L2
6.8 nH
1
EN2
C7
4.7 µ F
Freescale Semiconductor, Inc...
Figure 4. High IP3 900 MHz LNA
Application Schematic
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Application Information
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Freescale Semiconductor, Inc...
3.048 cm
(1.2 in)
2.374 cm
(0.9348 in)
12
Figure 5. 1.9/2.4 GHz PCB
Figure 6. 1.9/2.4 GHz
Assembly Diagram
Figure 7. 900 MHz PCB
Figure 8. 900 MHz Assembly
Diagram
MBC13720 Technical Data
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Freescale Semiconductor, Inc.Application Information
Figure 10. 900 MHz Capacitive
Feedback Assembly Diagram
Figure 9. 900 MHz Capactive
FeedbackPCB
Table 10. Typical Electrical Characteristics of the Application Schematic
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
Gain
G
21
20
-2.9
-22
dB
Noise Figure
NF
1.3
1.2
2.9
-
dB
Input Intermodulation Intercept Point
IIP3
2.0
-3.0
29
-
dBm
Output Intermodulation Intercept Point
OIP3
23
17
26
-
dBm
Output 1dB Compression Point
P1dB
11.5
10.5
5.0
-
dBm
Input Return Loss
|S11|2
11
10
12
-
dB
Output Return Loss
|S22|2
11
10
15
-
dB
Reverse Isolation
|S12|2
25
24
2.9
22
dB
Gain
G
16
15
-4.0
-14.5
dB
Noise Figure
NF
1.4
1.3
4.0
-
dB
Input Intermodulation Intercept Point
IIP3
10
3.5
27
-
dBm
Output Intermodulation Intercept Point
OIP3
26
18.5
23
-
dBm
Output 1dB Compression Point
P1dB
11.5
12
7.0
-
dBm
900 MHz TYPICAL (See Figure 3)
900 MHz HIGH IP3 (See Figure 4)
MOTOROLA
MBC13720 Technical Data
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Application Information
Freescale Semiconductor, Inc.
Table 10. Typical Electrical Characteristics of the Application Schematic (Continued)
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
Input Return Loss
|S11|2
12
11
8.0
-
dB
Output Return Loss
|S22|2
12
12
14
-
dB
Reverse Isolation
|S12|2
22
20
4.0
14.5
dB
Gain
G
14
13
-2.5
-16
dB
Noise Figure
NF
1.5
1.4
2.5
-
dB
Input Intermodulation Intercept Point
IIP3
10
4.0
29
-
dBm
Output Intermodulation Intercept Point
OIP3
24.4
17
26.5
-
dBm
Output 1dB Compression Point
P1dB
11.5
11
5.0
-
dBm
Input Return Loss
|S11|2
10
8.0
20
-
dB
Output Return Loss
|S22|2
8.0
7.0
30
-
dB
Reverse Isolation
|S12|2
19
19
2.5
16
dB
Gain
G
12
11
-2.8
-15
dB
Noise Figure
NF
1.7
1.65
2.8
-
dB
Input Intermodulation Intercept Point
IIP3
13
6.0
25
-
dBm
Output Intermodulation Intercept Point
OIP3
25
17.5
22
-
dBm
Output 1dB Compression Point
P1dB
14
14
5.0
-
dBm
Input Return Loss
|S11|2
12
10
12
-
dB
Output Return Loss
|S22|2
8.0
7.0
14
-
dB
Reverse Isolation
|S12|2
17
17
2.8
15
dB
Freescale Semiconductor, Inc...
1.9 GHz (See Figure 2)
2.4 GHz (See Figure 2)
14
MBC13720 Technical Data
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MOTOROLA
Freescale Semiconductor, Inc.
Packaging
4 Packaging
A
G
V
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
DIM
A
B
C
D
G
H
J
K
N
S
V
-B-
S
1
2
3
D
6 PL
0.2 (0.008)
M
B
M
Freescale Semiconductor, Inc...
N
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
--0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
0.012 0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
J
C
H
K
Figure 11. Outline Dimensions for SOT-363
(Case Outline 419B-01, Issue G)
MOTOROLA
MBC13720 Technical Data
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Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
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