CY621282BN MoBL® Automotive 1-Mbit (128 K × 8) Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description ■ Temperature Ranges ❐ Automotive-E: –40 °C to 125 °C ■ 4.5 V to 5.5 V operation ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Low active power 137.5 mW (max.) (25 mA) ■ Low standby power 137.5 W (max.) (25 A) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE1, CE2, and OE options ■ Available in Pb-free 32-pin (450 mil-wide) small outline integrated circuit (SOIC) package The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), and active LOW Output Enable (OE). This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable One (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW). Logic Block Diagram I/O 0 INPUT BUFFER I/O 1 128K x 8 ARRAY I/O 3 I/O 4 I/O 5 COLUMN DECODER CE1 CE2 WE I/O 6 POWER DOWN A8 A9 A 10 A 11 A 12 A 13 A 14 A 15 I/O 7 OE Cypress Semiconductor Corporation Document #: 001-65526 Rev. *A I/O 2 SENSE AMPS ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised June 21, 2011 [+] Feedback CY621282BN MoBL® Automotive Contents Product Portfolio .............................................................. 3 Pin Configuration ............................................................. 3 Pin Definitions .................................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 Data Retention Waveform ................................................ 6 Data Retention Characteristics ....................................... 6 Switching Characteristics ................................................ 7 Switching Waveforms ...................................................... 8 Document #: 001-65526 Rev. *A Truth Table ...................................................................... 10 Ordering Information ...................................................... 10 Ordering Code Definitions ......................................... 10 Package Diagrams .......................................................... 11 Acronyms ........................................................................ 12 Document Conventions ................................................. 12 Units of Measure ....................................................... 12 Document History Page ................................................. 13 Sales, Solutions, and Legal Information ...................... 14 Worldwide Sales and Design Support ....................... 14 Products .................................................................... 14 PSoC Solutions ......................................................... 14 Page 2 of 14 [+] Feedback CY621282BN MoBL® Automotive Product Portfolio Product CY621282BN Automotive-E Power Dissipation VCC Range (V) Min Typ [1] Max 4.5 5.0 5.5 Speed (ns) Operating, ICC (mA) Typ [1] Max 70 6 25 Standby, ISB2 (A) Typ [1] Max 2.5 25 Pin Configuration Figure 1. 32-pin SOIC (Top View) Top View SOIC NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GN G gnc g GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Pin Definitions I/O Type Description Input A0–A16. Address inputs Input/output I/O0–I/O7. Data lines. Used as input or output lines depending on operation. Input/control WE. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted. Input/control CE1. Chip Enable 1, Active LOW. Input/control CE2. Chip Enable 2, Active HIGH. Input/control OE. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. Ground GND. Ground for the device. Power supply VCC. Power supply for the device. Note 1. Typical values are included for reference only and are not tested or guaranteed. Typical values are measured at VCC = 5.0 V, TA = 25 °C. Document #: 001-65526 Rev. *A Page 3 of 14 [+] Feedback CY621282BN MoBL® Automotive DC input voltage [2, 3] .......................... –0.5 V to VCC + 0.5 V Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied .......................................... –55 °C to +125 °C Supply voltage on VCC to relative GND[2] .................................–0.5 V to +7.0 V DC voltage applied to outputs in High Z state [2] ................................ –0.5 V to VCC + 0.5 V Current into outputs (LOW) ........................................ 20 mA Static discharge voltage .......................................... > 2001 V (per MIL-STD-883, Method 3015) Latch-up current .................................................... > 200 mA Operating Range Range Automotive-E Ambient Temperature VCC –40 °C to +125 °C 5 V 10% Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH voltage VOL Output LOW voltage Test Conditions -70 Unit Min Typ [4] Max VCC = 4.5 V, IOH = –1.0 mA 2.4 – – VCC = 5.5 V, IOH = –0.1 mA 3.95 – – VCC = 5 V, IOH = –0.1 mA 3.6 – – VCC = 4.5 V, IOH = –0.1 mA 3.25 – – – – 0.4 V VCC = 4.5 V, IOL = 2.1 mA V VIH Input HIGH voltage 2.2 – VCC + 0.3 V VIL Input LOW voltage[2] –0.3 – 0.8 V IIX Input leakage current GND VI VCC –10 – +10 A IOZ Output leakage current GND VI VCC, Output Disabled –10 – +10 A ICC VCC operating supply current mA f = fMAX = 1/tRC f = 1 MHz VCC = 5.5 V, IOUT = 0 mA – 6 25 2 12 ISB1 Automatic CE power-down current —TTL inputs VCC = 5.5 V, CE1 VIH or CE2 < VIL, VIN VIH or VIN VIL, f = fMAX – 0.1 2 mA ISB2 Automatic CE power-down current —CMOS inputs VCC = 5.5 V, CE1 VCC – 0.3 V, or CE2 0.3 V, VIN VCC – 0.3 V, or VIN 0.3 V, f = 0 – 2.5 25 A Notes 2. VIL (min.) = –2.0 V for pulse durations of less than 20 ns. 3. No input may exceed VCC + 0.5 V. 4. Typical values are included for reference only and are not tested or guaranteed. Typical values are measured at VCC = 5.0 V, TA = 25 °C. Document #: 001-65526 Rev. *A Page 4 of 14 [+] Feedback CY621282BN MoBL® Automotive Capacitance Parameter [5] CIN Description Test Conditions TA = 25 C, f = 1 MHz, VCC = 5.0 V Input capacitance COUT Output capacitance Max Unit 9 pF 9 pF Thermal Resistance Parameter [5] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions 32-pin SOIC Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. 66.17 C/W 30.87 C/W AC Test Loads and Waveforms Figure 2. AC Test Loads and Waveforms R1 1800 5V R1 1800 5V Output All Input Pulses VCC 90% Output R2 990 100 pF Including JIG and Scope (a) R2 990 5 pF Including JIG and Scope (b) 90% 10% GND Rise TIme: 1 V/ns 10% Fall TIme: 1 V/ns Equivalent to: THÉVENIN Equivalent 639 1.77 V OUTPUT Note 5. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-65526 Rev. *A Page 5 of 14 [+] Feedback CY621282BN MoBL® Automotive Data Retention Waveform Figure 3. Data Retention Waveform VCC, min. tCDR VCC Data Retention Mode VDR > 2 V VCC, min. tR CE1 or CE2 Data Retention Characteristics Over the Operating Range Parameter Description VDR VCC for data retention ICCDR Data retention current tCDR tR Conditions Min Typ Max Unit 2.0 – – V – 1.5 25 A Chip deselect to data retention time 0 – – ns Operation recovery time 70 – – ns Document #: 001-65526 Rev. *A VCC = VDR = 2.0 V, CE1 VCC – 0.3 V, or CE2 0.3 V, VIN VCC – 0.3 V or, VIN 0.3 V Automotive-E Page 6 of 14 [+] Feedback CY621282BN MoBL® Automotive Switching Characteristics Over the Operating Range Parameter [6] Description CY621282BN-70 Min Max Unit Read Cycle tRC Read cycle time 70 – ns tAA Address to data valid – 70 ns tOHA Data hold from address change 5 – ns tACE CE1 LOW to data valid, CE2 HIGH to data valid – 70 ns tDOE OE LOW to data valid – 35 ns tLZOE OE LOW to Low Z [7] 0 – ns – 25 ns 5 – ns OE HIGH to High Z tHZOE [7, 8] CE1 LOW to Low Z, CE2 HIGH to Low Z tLZCE [7] [7, 8] tHZCE CE1 HIGH to High Z, CE2 LOW to High Z – 25 ns tPU CE1 LOW to Power-up, CE2 HIGH to power-up 0 – ns CE1 HIGH to Power-down, CE2 LOW to power-down – 70 ns tPD Write Cycle [9] tWC Write cycle time 70 – ns tSCE CE1 LOW to Write End, CE2 HIGH to write end 60 – ns tAW Address set-up to write end 60 – ns tHA Address hold from write end 0 – ns tSA Address set-up to write start 0 – ns tPWE WE pulse width 50 – ns tSD Data set-up to write end 30 – ns tHD Data Hold from write end 0 – ns [7] tLZWE WE HIGH to Low Z tHZWE WE LOW to High Z [7, 8] 5 – ns – 25 ns Notes 6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH and 100-pF load capacitance. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (b) of Figure 2 on page 5. Transition is measured 500 mV from steady-state voltage. 9. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. CE1 and WE must be LOW and CE2 HIGH to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 001-65526 Rev. *A Page 7 of 14 [+] Feedback CY621282BN MoBL® Automotive Switching Waveforms Figure 4. Read Cycle No.1 [10, 11] tRC Address tOHA Data Out tAA Previous Data Valid Data Valid Figure 5. Read Cycle No. 2 (OE Controlled) [11, 12] Address tRC CE1 CE2 tACE OE tHZOE tDOE Data Out tHZCE tLZOE High Impedance Data Valid tLZCE VCC Supply Current High Impedance tPD tPU 50% 50% ICC ISB Figure 6. Write Cycle No. 1 (CE1 or CE2 Controlled) [13, 14] tWC Address tSCE CE1 CE2 tSA tSCE tAW tHA tPWE WE tSD Data I/O tHD Data Valid Notes 10. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH. 13. Data I/O is high impedance if OE = VIH. 14. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 001-65526 Rev. *A Page 8 of 14 [+] Feedback CY621282BN MoBL® Automotive Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (WE Controlled, OE HIGH during Write) [15, 16] tWC Address tSCE CE1 CE2 tSCE tAW tHA tSA tPWE WE OE tSD Data I/O tHD Data IN Valid NOTE 17 tHZOE Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) [15, 16] tWC Address tSCE CE1 CE2 tSCE tAW tSA tHA tPWE WE tSD Data I/O NOTE 17 tHD Data Valid tHZWE tLZWE Notes 15. Data I/O is high impedance if OE = VIH. 16. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state. 17. During this period the I/Os are in the output state and input signals should not be applied. Document #: 001-65526 Rev. *A Page 9 of 14 [+] Feedback CY621282BN MoBL® Automotive Truth Table CE1 CE2 OE WE I/O0–I/O7 Mode Power H X X X High Z Power-down Standby (ISB) X L X X High Z Power-down Standby (ISB) L H L H Data out Read Active (ICC) L H X L Data in Write Active (ICC) L H H H High Z Selected, Outputs disabled Active (ICC) Ordering Information Speed (ns) 70 Ordering Code CY621282BNLL-70SXE Package Diagram 51-85081 Package Type 32-pin 450-Mil SOIC (Pb-free) Operating Range Automotive-E Please contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 2 8 2 B N LL - 70 S X E Temperature Grade: E = Automotive-E Pb-free Package Type: S = 32-pin SOIC Speed Grade: 70 ns LL = Low Power Nitride Seal Mask fix B = Process Technology 250 nm Fixed value Bus width = × 8 Density = 1-Mbit Family Code: MoBL SRAM family Company ID: CY = Cypress Document #: 001-65526 Rev. *A Page 10 of 14 [+] Feedback CY621282BN MoBL® Automotive Package Diagrams Figure 9. 32-pin Molded SOIC (450 Mil) S32.45/SZ32.45, 51-85081 51-85081 *C Document #: 001-65526 Rev. *A Page 11 of 14 [+] Feedback CY621282BN MoBL® Automotive Acronyms Acronym Document Conventions Description CE chip enable CMOS complementary metal oxide semiconductor I/O input/output OE output enable SOIC small outline integrated circuit SRAM static random access memory TTL transistor-transistor logic WE write enable Document #: 001-65526 Rev. *A Units of Measure Symbol Unit of Measure °C degree Celsius MHz Mega Hertz µA micro Amperes s micro seconds mA milli Amperes mV milli Volts mW milli Watts ns nano seconds ohms % percent pF pico Farad V Volts W Watts Page 12 of 14 [+] Feedback CY621282BN MoBL® Automotive Document History Page Document Title: CY621282BN MoBL® Automotive, 1-Mbit (128 K × 8) Static RAM Document Number: 001-65526 ECN NO. Issue Date Orig. of Change ** 3115909 01/06/2011 RAME New Data Sheet *A 3288690 06/21/2011 RAME Removed the Note “For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.” and its reference in Functional Description. Updated in new template. REV. Document #: 001-65526 Rev. *A Description of Change Page 13 of 14 [+] Feedback CY621282BN MoBL® Automotive Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-65526 Rev. *A Revised June 21, 2011 Page 14 of 14 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback