VISHAY BA1282_10

BA1282, BA1283
Vishay Semiconductors
Band Switching Diodes
FEATURES
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•
•
•
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9612315
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•
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MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
•
Silicon planar diode
Saving space
Hermetic sealed parts
Fits onto SOD-323 footprints
Electrical data identical with the devices BA682,
BA683, BA982, BA983
Low dynamic forward resistance
Low diode capacitance
High reverse impedance
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
in
APPLICATIONS
• Band switching in VHF-tuners
PARTS TABLE
PART
TYPE DIFFERENTIATION
ORDERING CODE
REMARKS
BA1282
VR = 35 V, rf at IF 3 mA = max. 0.7 Ω
BA1282-TR3 or BA1282-TR
Tape and reel
BA1283
VR = 35 V, rf at IF 3 mA = max. 1.2 Ω
BA1283-TR3 or BA1283-TR
Tape and reel
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITIONS
VR
35
UNIT
V
Forward continuous current
IF
100
mA
Note
(1) T
amb = 25 °C, unless otherwise specified
THERMAL CHARACTERISTICS (1)
PARAMETER
Junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
Mounted on epoxy-glass hard tissue, fig. 1
35 µm copper clad, 0.9 mm2 copper area per electrode
RthJA
500
K/W
Tj
150
°C
Tstg
- 55 to + 150
°C
Junction temperature
Storage temperature range
Note
(1) T
amb = 25 °C, unless otherwise specified
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
MAX.
UNIT
Forward voltage
TEST CONDITION
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
f = 100 MHz, VR = 1 V
CD1
1.5
pF
BA1282
CD2
1.25
pF
BA1283
CD2
1.2
pF
Diode capacitance
f = 100 MHz, VR = 3 V
f = 200 MHz, IF = 3 mA
Dynamic forward resistance
f = 200 MHz, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
BA1282
rf1
0.7
Ω
BA1283
rf1
1.2
Ω
BA1282
rf2
0.5
Ω
BA1283
rf2
0.9
Ω
Note
(1) T
amb = 25 °C, unless otherwise specified
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes [email protected], [email protected], [email protected]
www.vishay.com
1
BA1282, BA1283
Band Switching Diodes
Vishay Semiconductors
rf - Differential Forward Resistance (Ω)
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
100
f = 200 MHz
Tj = 25 °C
10
BA1283
1
BA1282
0.1
0.1
1
10
100
IF - Forward Current (mA)
94 9076
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
CD - Diode Capacitance (pF)
3.0
f = 200 MHz
Tj = 25 °C
2.5
2.0
1.5
BA1282
1.0
BA1283
0.5
0
0.1
1
10
100
VR - Reverse Voltage (V)
94 9077
Fig. 2 - Diode Capacitance vs. Reverse Voltage
0.71
1.3
1.27
9.9
0.152
10
25
0.355
2.5
95 10329
24
Fig. 3 - Board for RthJA Definition (in mm)
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes [email protected], [email protected], [email protected]
www.vishay.com
2
BA1282, BA1283
Band Switching Diodes
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
surface plan
gl
0.6 (0.024)
*
1.1 (0.043)
1.2 (0.047)
<
1.
35
1 (0.039)
(
as 0.0
s 53
)
surface plan
Cathode indification
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
2 (0.079)
1.8 (0.071)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
Wave soldering
2.4 (0.094)
2.8 (0.110)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
1.4 (0.055)
1.2 (0.047)
0.8 (0.031)
Reflow soldering
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes [email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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