WILLAS FM120-M+ BC86 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile TRANSISTOR (PNP) SOT-89 optimize board space. FEATURES • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • High NPN Complement to BC868 • High surge capability. Low Voltage • Guardring for overvoltage protection. High Current high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of RoHS product for packing code suffix ”G” MIL-STD-19500 /228 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR 3. EMITTER Halogen free product for packing code suffix "H" Mechanical data MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) : UL94-V0 rated flame retardant • Epoxy • Terminals :Plated terminals, solderable per MIL-STD-750 Collector-Base Voltage VCBO Method 2026 Collector-Emitter Voltage VCEO -32 V Dimensions in inches and (millimeters) -5 V -1 A 500 mW MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Thermal Resistance From Junction To Ambient 250 RθJA ℃/W Ratings at 25℃ ambient temperature unless otherwise specified. Junction Temperature Tj Single phase half wave, 60Hz, resistive of inductive load. Storage Tstg For capacitive load, derateTemperature current by 20% RATINGS 150 ℃ -55~+150 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise 12 13 14specified) 15 Maximum Recurrent Peak Reverse Voltage 30 40 50 18 80 10 100 115 150 120 200 14 Test 21 28 conditions 35 42 Min 56 Typ 70 Max 105 Unit 140 Collector-base breakdown voltage VDC V(BR)CBO 20 30 =0 40 IC=-100µA,I E 50 60 -32 80 100 150 V 200 Maximum Average Forward Rectified Current IO V(BR)CEO IC=-1mA,IB=0 Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 msvoltage single half sine-wave V(BR)EBO Emitter-base breakdown IFSM Collector cut-off current ICBO VCB=-25V,IE=0 Emitter cut-off current Typical Junction Capacitance (Note 1) IC EBO J VEB=-5V,I C=0 Operating Temperature Range hTFE(1) J -55 to +125 VCE=-10V, IC=-5mA Storage Temperature DC current gain Range TSTG h VCE=-1V, IC=-0.5A FE(2) CHARACTERISTICS Collector-emitter saturation voltage Maximum Forward Voltage at 1.0A DC hFE(3) SYMBOL BaseDC -emitter Rated Blockingvoltage Voltage @T A=125℃ IC=-1A,IB=-0.1A 0.50 IR VCE=-1V, IC=-1A VBE frequency -530 V 40 120 -0.1 µA -0.1 µA -55 to +150 50 - 65 to +175 100 0.70 375 fT 0.85 -0.5 0.5 10 VCE=-10V, IC=-5mA NOTES: Transition V VCE=-1V, IC=-1A 60 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VCE(sat) VF Maximum Average Reverse Current at @T A=25℃ 1.0 -20 IE=-100µA,IC=0 RΘJA Typical Thermal Resistance (Note 2) VCE=-5V,IC=-10mA, f=100MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 16 60 VRMS Symbol superimposed on rated load (JEDEC method) 20 VRRM Maximum DC Blocking Voltage Maximum RMSParameter Voltage 0.031(0.8) Typ. V im ina Collector Power Dissipation PC Unit 0.031(0.8) Typ. -20 • Polarity : Indicated by cathode band Emitter-Base Voltage VEBO • Mounting Position : Any Current IC• WeightCollector : Approximated 0.011 gram Value , ry • Case : Molded plastic, SOD-123H Symbol Parameter 0.040(1.0) 0.024(0.6) -1 -0.62 V 0.9 0.92 V V MHz 40 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE(2) 2012-06 2012-10 RANK BC869 BC869-16 BC869-25 RANGE 100–375 100–250 160–375 MARKING CEC CGC CHC WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC86 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. ry 0.031(0.8) Typ. Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .055(1.40) im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .154(3.91) Marking Code RATINGS .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH .091(2.30) 12 20 V.023(0.58) RRM 13 30 Maximum RMS Voltage VRMS 21 28 Maximum DC Blocking Voltage VDC 30 40 Maximum Average Forward Rectified Current IO IFSM Pr el Maximum Recurrent Peak Reverse Voltage .016(0.40) 14 .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) -55 to +150 - 65 to +175 .017(0.44) .014(0.35) .118TYP FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH 0.9 0.92 V F 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 14 40 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-10 Rev.C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.