WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. TRANSISTOR (NPN) • Low power loss, high efficiency. FEATURES • High current capability, low forward voltage drop. High surge capability. Power •dissipation • Guardring for overvoltage protection. Pb-Free package is available switching. • Ultra high-speed metal • Silicon RoHS product for epitaxial packingplanar codechip, suffix ”G”silicon junction. • Lead-free parts meet environmental standards of Halogen freeMIL-STD-19500 product for packing code suffix “H” /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-89 0.071(1.8) 0.056(1.4) 1. BASE 2. COLLECTOR Halogen free product for packing code suffix "H" Mechanical data 3. EMITTER • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) • Case : Molded plastic, SOD-123H , Symbol • Terminals :Plated Parameter Value Unit terminals, solderable per MIL-STD-750 VCBO MethodVoltage 2026 Collector-Base • Polarity : Indicated by cathode band Collector-Emitter Voltage • Mounting Position : Any Emitter-Base Voltage • Weight : Approximated 0.011 gram VCEO VEBO IC 40 V 30 V 6 V 3 A Collector Current -Continuous 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Collector Power Dissipation 0.5 W PC Ratings at 25℃ ambient temperature unless otherwise specified. Junction Temperature 150 TJ ℃ Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature -55~150 ℃ TstgFor capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 20 30 40 50 60 150 200 ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified) Maximum DC Blocking Voltage Parameter Maximum Average Forward Rectified Current Collector-base breakdown voltage VDC Symbol IO Test conditions Min V(BR)CBO IC = 100μA, IE=0 40 Collector-emitter breakdown voltage IFSM V(BR)CEO IC = 10mA, IB=0 30 Emitter-base breakdown voltage Typical Thermal Resistance (Note 2) V(BR)EBO RΘJA IE= 100μA, IC =0 6 Typical Junction Collector cut-offCapacitance current (Note 1) ICBO CJ VCB= 40V, IE =0 TJ VCE= 30V, IB=0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating Temperature Range Collector cut-off current ICEO Emitter cut-off current IEBO Storage Temperature Range TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ 100 Max Unit V VEB= 6V, IC=0 V V 1 µA 10 µA 1 µA -55 to +150 - 65 to +175 hFE(2) 0.50 VCE=2V, IC= 100mA IC= 2A, IB= 0.2 A Base-emitter saturation voltage IC= 2A, IB= 0.2 A 40 120 -55 to +125 VCE(sat)IR Collector-emitter voltage@T A=125℃ Rated DC Blockingsaturation Voltage VBE(sat) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. VCE= 5V , Ic=0.1A 2- Thermal Resistance From Junction to Ambient f =10MHz Transition frequency 80 FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH hFE(1) VCE=2V, FM130-MH IC= 1A FM140-MH FM150-MH 60 FM160-MH FM180-MH400 DCMaximum current Forward gain Voltage at 1.0A DC NOTES: Typ 1.0 30 fT 0.70 32 0.9 0.85 0.5 10 0.92 0.5 V 1.5 V 50 MHz CLASSIFICATION OF hFE(1) Rank Range 2012-06 2012-0 R O Y 60-120 100-200 160-320 GR WILLAS200-400 ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Static Characteristic offers 9mA better reverse leakage current and thermal resistance. 8mA application in order to • Low profile surface mounted7mA 1.50 6mA optimize board space. • Low power loss, high efficiency. 5mA 1.25 • High current capability, low forward voltage drop. 4mA 1.00 • High surge capability. • Guardring for overvoltage protection. 3mA 0.75 • Ultra high-speed switching. 2mA 0.50 • Silicon epitaxial planar chip, metal silicon junction. •0.25Lead-free parts meet environmental standards of MIL-STD-19500 /228 IB=1mA • RoHS product for packing code suffix "G" 0.00 0 1 2 3 4 5 6 7 8 Halogen free product for packing code suffix "H" (A) IC COLLECTOR CURRENT COLLECTOR-EMITTER VOLTAGE SOD-123H 100 0.071(1.8) 0.056(1.4) 1 10 • Polarity : Indicated by cathode band • Mounting Position : Any T =100 ℃ • Weight : Approximated 0.011 gram a 10 100 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Method 2026 VBEsat —— 2000 3000 1000 IC (mA) 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. 1000 Ta=25℃ Dimensions in inches and (millimeters) Ta=100 ℃ ℃ MAXIMUMT =25 RATINGS AND ELECTRICAL CHARACTERISTICS a Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load.β=10 1 For capacitive load, derate 1 10 current by 20% 100 1000 3000 COLLECTOR CURREMT RATINGS Marking Code IC β=10 100 1 10 100 COLLECTOR CURREMT (mA) 1000 IC 12 20 13 30500 14 40 Cob/Cib —— 15 16 50 60 Maximum 1000RMS Voltage VRMS 14 21 28 35 42 56 VDC 20 30 40 50 C 60 80 COLLECTOR CURRENT T= a 10 0℃ IC Maximum Average Forward Rectified Current 100 T= a 25 ℃ Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) 10 Storage Temperature Range 300 600 900 CHARACTERISTICS BASE-EMMITER VOLTAGE VBE (mV) Maximum Forward Voltage at 1.0A DC C Rated DC Blocking Voltage Ta=25 ℃ 100 120 200 105 140 150 200 -55 to +150 1200 10 0.1 1 10 20 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH REVERSE VOLTAGE V (V) VF Maximum Average Reverse Current @T A=25℃ P at—— T 600 f=1MHz IE=0/I 70C=0 115 150 - 65 to +175 COMMON EMITTER TSTG VCE= 2V 1 0 10 100 80 40 120 -55 to +125 TJ Operating Temperature Range Cob VCB/V18 EB 1.0 30 100 RΘJA Typical Thermal Resistance (Note 2) IO IFSM ib C Maximum DC Blocking Voltage CAPACITANCE VBE (mA) 3000 —— (pF) VRRM IC 3000 (mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage 0.012(0.3) Typ. 10 VCEsat flame —— retardant IC • Epoxy : UL94-V0 rated • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 100 0.146(3.7) 0.130(3.3) Ta=25℃ COMMON EMITTER VCE= 2V 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) C Ta=100℃ VCE (V) Mechanical data FE COMMONdissipation EMITTER power Ta=25 ℃ hFE excellent • Batch process design, 10mA 1.75 Packageh outline —— I 1000 DC CURRENT GAIN Features 2.00 Pb Free Produ 0.50 @T A=125℃ 0.85 0.9 0.5 IR a 0.70 0.92 10 COLLECTOR POWER DISSIPATION PC (mW) NOTES: 500 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal400 Resistance From Junction to Ambient 300 200 100 2012-06 WILLAS ELECTRONIC COR 0 0 25 50 75 AMBIENT TEMPERATURE 2012-0 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU FM1200-M Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) 0.040(1.0) 0.024(0.6) retardant • Epoxy : UL94-V0 rated flame.173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .167(4.25) Marking Code .154(3.91) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM 12 20 VDC 20 .023(0.58) 14 VRMS .016(0.40) .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS TSTG 40 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 .197(0.52) .013(0.32) .017(0.44) .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at .118TYP (3.0)TYP @T A=25℃ Rated DC Blocking Voltage @T A=125℃ Maximum Forward Voltage at 1.0A DC 13 30 IO IFSM Maximum Average Forward Rectified Current .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ THRU FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. loss, high efficiency. • Low powerInformation: Ordering 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (3)overvoltage (1)protection. (2) for • Guardring D882 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Ultra high-speed switching. Note: (1) CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing codeFE suffix "G" • RoHS (3) CLASSIFICATION OF h RANK Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can A Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Temperature Range Operating TJ 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, Marking Code life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR m or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Maximum Forward Voltage at 1.0A DC 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.